페이지 10 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  10/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PK35UD1PBF
Infineon Technologies

IGBT 1400V 40A 167W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: -/150ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,272
1400V
40A
200A
2.35V @ 15V, 20A
167W
650µJ (off)
Standard
98nC
-/150ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGI4061DPBF
Infineon Technologies

IGBT 600V 20A 43W TO220FP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.59V @ 15V, 11A
  • Power - Max: 43W
  • Switching Energy: 52µJ (on), 231µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 37ns/111ns
  • Test Condition: 400V, 11A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고112,284
600V
20A
40A
1.59V @ 15V, 11A
43W
52µJ (on), 231µJ (off)
Standard
35nC
37ns/111ns
400V, 11A, 22 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4BC30F-STRR
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,528
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4PH30K
Infineon Technologies

IGBT 1200V 20A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: 640µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 28ns/200ns
  • Test Condition: 960V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,480
1200V
20A
40A
4.2V @ 15V, 10A
100W
640µJ (on), 920µJ (off)
Standard
53nC
28ns/200ns
960V, 10A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGPF50F
Infineon Technologies

IGBT FAST 900V 51A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,496
900V
51A
-
2.7V @ 15V, 28A
200W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB15N120IHTG
ON Semiconductor

IGBT 1200V 15A BIPOLAR TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,096
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IXGH50N60B
IXYS

IGBT 600V 75A 300W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고6,608
600V
75A
200A
2.3V @ 15V, 50A
300W
3mJ (off)
Standard
160nC
50ns/150ns
480V, 50A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IKW40N65F5AXKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 350µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 73ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고2,384
650V
74A
120A
2.1V @ 15V, 40A
250W
350µJ (on), 100µJ (off)
Standard
95nC
19ns/165ns
400V, 20A, 15 Ohm, 15V
73ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKB10N60TATMA1
Infineon Technologies

IGBT 600V 20A 110W TO263-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO-263
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,592
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO-263
IRGR3B60KD2TRP
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,208
600V
7.8A
15.6A
2.4V @ 15V, 3A
52W
62µJ (on), 39µJ (off)
Standard
13nC
18ns/110ns
400V, 3A, 100 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGK400N30C3
IXYS

IGBT 300V 400A TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 400A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고6,656
300V
400A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGX400N30A3
IXYS

IGBT 300V 400A 1000W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 400A
  • Current - Collector Pulsed (Icm): 1200A
  • Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
  • Power - Max: 1000W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 560nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,632
300V
400A
1200A
1.15V @ 15V, 100A
1000W
-
Standard
560nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
APT40GP60SG
Microsemi Corporation

IGBT 600V 100A 543W D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 385µJ (on), 352µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/64ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3 [S]
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,928
600V
100A
160A
2.7V @ 15V, 40A
543W
385µJ (on), 352µJ (off)
Standard
135nC
20ns/64ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3 [S]
APT15GP90BG
Microsemi Corporation

IGBT 900V 43A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 60nC
  • Td (on/off) @ 25°C: 9ns/33ns
  • Test Condition: 600V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고3,520
900V
43A
60A
3.9V @ 15V, 15A
250W
200µJ (off)
Standard
60nC
9ns/33ns
600V, 15A, 4.3 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247 [B]
hot NGTB75N60FL2WG
ON Semiconductor

IGBT 600V 75A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 595W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,160
600V
100A
200A
2V @ 15V, 75A
595W
1.5mJ (on), 1mJ (off)
Standard
310nC
110ns/270ns
400V, 75A, 10 Ohm, 15V
80ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH72N60B3
IXYS

IGBT 600V 75A 540W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.38mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/150ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고6,080
600V
75A
400A
1.8V @ 15V, 60A
540W
1.38mJ (on), 1.05mJ (off)
Standard
230nC
31ns/150ns
480V, 50A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXA4IF1200UC
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,896
1200V
9A
-
2.1V @ 15V, 3A
45W
400µJ (on), 300µJ (off)
Standard
12nC
-
600V, 3A, 330 Ohm, 15V
350ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
RJH60F7BDPQ-A0#T0
Renesas Electronics America

IGBT 600V 90A 328.9W TO-247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Power - Max: 328.9W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 63ns/142ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
패키지: TO-247-3
재고7,680
600V
90A
-
1.75V @ 15V, 50A
328.9W
-
Standard
-
63ns/142ns
400V, 30A, 5 Ohm, 15V
25ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
hot IRG4PC50WPBF
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 80µJ (on), 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 46ns/120ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고32,244
600V
55A
220A
2.3V @ 15V, 27A
200W
80µJ (on), 320µJ (off)
Standard
180nC
46ns/120ns
480V, 27A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
FGHL75T65MQDTL4
onsemi

IGBT TRENCH FS 650V 80A TO247-4L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
  • Power - Max: 375 W
  • Switching Energy: 1.2mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 32ns/181ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 107 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: -
재고1,059
650 V
80 A
300 A
1.8V @ 15V, 75A
375 W
1.2mJ (on), 1.1mJ (off)
Standard
149 nC
32ns/181ns
400V, 75A, 10Ohm, 15V
107 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
STGP20IH65DF
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 159 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 400V, 20A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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650 V
40 A
60 A
2.05V @ 15V, 20A
159 W
-
Standard
56 nC
-
400V, 20A, 22Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IKQ120N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
  • Power - Max: 498 W
  • Switching Energy: 4.2mJ (on), 3.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 251 nC
  • Td (on/off) @ 25°C: 38ns/287ns
  • Test Condition: 400V, 120A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 82 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: -
재고630
650 V
160 A
480 A
1.65V @ 15V, 120A
498 W
4.2mJ (on), 3.7mJ (off)
Standard
251 nC
38ns/287ns
400V, 120A, 10Ohm, 15V
82 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
FGAF40S65AQ
onsemi

IGBT TRENCH FS 650V 80A TO3PF-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 94 W
  • Switching Energy: 132µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 17.8ns/81.6ns
  • Test Condition: 400V, 10A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 274 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF-3
패키지: -
재고18
650 V
80 A
160 A
2.1V @ 15V, 40A
94 W
132µJ (on), 62µJ (off)
Standard
75 nC
17.8ns/81.6ns
400V, 10A, 6Ohm, 15V
274 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
STGWA20H65DFB2
STMicroelectronics

IGBT TRENCH FS 650V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 215 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고111
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
215 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
HGT1S20N60C3R
Harris Corporation

40A, 600V, RUGGED N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 164 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 116 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
패키지: -
Request a Quote
600 V
40 A
80 A
2.2V @ 15V, 20A
164 W
-
Standard
116 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
IKZA75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 240µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
패키지: -
재고858
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
240µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
FGY100T65SCDT
onsemi

IGBT TRENCH FS 650V 200A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Power - Max: 750 W
  • Switching Energy: 5.4mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 157 nC
  • Td (on/off) @ 25°C: 84ns/216ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
패키지: -
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650 V
200 A
300 A
1.9V @ 15V, 100A
750 W
5.4mJ (on), 3.8mJ (off)
Standard
157 nC
84ns/216ns
400V, 100A, 4.7Ohm, 15V
62 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
STG200G65FD8AG
STMicroelectronics

IGBT TRENCH FS 650V 200A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: 5.34mJ (on), 6.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 701 nC
  • Td (on/off) @ 25°C: 66.2ns/442.7ns
  • Test Condition: 400V, 200A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
200 A
600 A
1.8V @ 15V, 200A
-
5.34mJ (on), 6.23mJ (off)
Standard
701 nC
66.2ns/442.7ns
400V, 200A, 4.7Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die