페이지 133 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  133/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKU04N60RBKMA1
Infineon Technologies

IGBT 600V 8A 75W TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 240µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PG-TO251-3
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,440
600V
8A
12A
2.1V @ 15V, 4A
75W
240µJ
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
43ns
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
IRG4RC10KTRR
Infineon Technologies

IGBT 600V 9A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 160µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 11ns/51ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,864
600V
9A
18A
2.62V @ 15V, 5A
38W
160µJ (on), 100µJ (off)
Standard
19nC
11ns/51ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4PC20U
Infineon Technologies

IGBT 600V 13A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 100µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 21ns/86ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고18,000
600V
13A
52A
2.1V @ 15V, 6.5A
60W
100µJ (on), 120µJ (off)
Standard
27nC
21ns/86ns
480V, 6.5A, 50 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247AC
IRG4P254S
Infineon Technologies

IGBT 250V 98A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 98A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 55A
  • Power - Max: 200W
  • Switching Energy: 380µJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 200V, 55A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,440
250V
98A
196A
1.5V @ 15V, 55A
200W
380µJ (on), 3.5mJ (off)
Standard
200nC
40ns/270ns
200V, 55A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJH60F0DPQ-A0#T0
Renesas Electronics America

IGBT 600V 50A 201.6W TO-247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
  • Power - Max: 201.6W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/70ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
패키지: TO-247-3
재고2,016
600V
50A
-
1.82V @ 15V, 25A
201.6W
-
Standard
-
46ns/70ns
400V, 30A, 5 Ohm, 15V
90ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
IXSR40N60CD1
IXYS

IGBT 600V 62A 210W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 62A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 210W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/70ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고4,080
600V
62A
150A
2.5V @ 15V, 40A
210W
1mJ (off)
Standard
190nC
50ns/70ns
480V, 40A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
SGH23N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고4,400
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
49nC
17ns/60ns
300V, 12A, 23 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot NGTB30N120FL2WG
ON Semiconductor

IGBT 1200V 60A 452W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 452W
  • Switching Energy: 2.6mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 98ns/210ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,632
1200V
60A
120A
2.3V @ 15V, 30A
452W
2.6mJ (on), 700µJ (off)
Standard
220nC
98ns/210ns
600V, 30A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RJP65T43DPQ-A0#T2
Renesas Electronics America

IGBT TRENCH 650V 60A TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 170µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 35ns/105ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
패키지: TO-247-3
재고5,632
650V
60A
-
2.4V @ 15V, 20A
150W
170µJ (on), 130µJ (off)
Standard
69nC
35ns/105ns
400V, 20A, 10 Ohm, 15V
-
175°C (TJ)
Through Hole
TO-247-3
TO-247A
STGFW30V60F
STMicroelectronics

IGBT 600V 60A 58W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 58W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
패키지: TO-3P-3 Full Pack
재고4,496
600V
60A
120A
2.3V @ 15V, 30A
58W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IXXX200N60C3
IXYS

IGBT 600V 200A PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 340A
  • Current - Collector Pulsed (Icm): 900A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: 3mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 47ns/125ns
  • Test Condition: 360V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,960
600V
340A
900A
2.1V @ 15V, 100A
-
3mJ (on), 1.7mJ (off)
Standard
315nC
47ns/125ns
360V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
FGB7N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 14A 83W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
  • Power - Max: 83W
  • Switching Energy: 99µJ (on), 104µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 5.9ns/32.3ns
  • Test Condition: 400V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 32.3ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고17,664
600V
14A
21A
2.3V @ 15V, 7A
83W
99µJ (on), 104µJ (off)
Standard
18nC
5.9ns/32.3ns
400V, 7A, 10 Ohm, 15V
32.3ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
IXYP50N65C3
IXYS

IGBT 650V 130A 600W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 1.3mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 22ns/80ns
  • Test Condition: 400V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고5,424
650V
130A
250A
2.1V @ 15V, 36A
600W
1.3mJ (on), 370µJ (off)
Standard
80nC
22ns/80ns
400V, 36A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGD10NC60SDT4
STMicroelectronics

IGBT 600V 18A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,920
600V
18A
25A
1.65V @ 15V, 5A
60W
60µJ (on), 340µJ (off)
Standard
18nC
19ns/160ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
NGTB20N120IHRWG
ON Semiconductor

IGBT 1200V 40A 384W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
  • Power - Max: 384W
  • Switching Energy: 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,744
1200V
40A
120A
2.45V @ 15V, 20A
384W
450µJ (off)
Standard
225nC
-/235ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGW20V60DF
STMicroelectronics

IGBT 600V 40A 167W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고16,416
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
40ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot FGA25N120ANTDTU
Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
  • Power - Max: 312W
  • Switching Energy: 4.1mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/190ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고42,600
1200V
50A
90A
2.65V @ 15V, 50A
312W
4.1mJ (on), 960µJ (off)
Standard
200nC
50ns/190ns
600V, 25A, 10 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
SIGC25T60NCX1SA7
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXYA20N65C3D1
IXYS

IGBT 650V 50A TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200 W
  • Switching Energy: 430µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
재고549
650 V
50 A
105 A
2.5V @ 15V, 20A
200 W
430µJ (on), 650µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
RJP56F4ADPP-00-T2
Renesas Electronics Corporation

IGBT 430V 200A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
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IKB40N65EF5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 420µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 22ns/160ns
  • Test Condition: 400V, 40A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 83 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: -
재고5,202
650 V
74 A
160 A
2.1V @ 15V, 40A
250 W
420µJ (on), 100µJ (off)
Standard
95 nC
22ns/160ns
400V, 40A, 15Ohm, 15V
83 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IQFH86N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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IKWH30N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 67A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 67 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
  • Power - Max: 136 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 97 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
패키지: -
재고600
650 V
67 A
90 A
1.75V @ 15V, 30A
136 W
-
Standard
97 nC
-
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
FGHL50T65MQD
onsemi

IGBT 650V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 268 W
  • Switching Energy: 1.05mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 23ns/120ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 32 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,308
650 V
80 A
200 A
1.8V @ 15V, 50A
268 W
1.05mJ (on), 700µJ (off)
Standard
94 nC
23ns/120ns
400V, 50A, 10Ohm, 15V
32 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGA20N120A3-TRL
IXYS

IXGA20N120A3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 180 W
  • Switching Energy: 2.85mJ (on), 6.47mJ (off)
  • Input Type: Standard
  • Gate Charge: 50 nC
  • Td (on/off) @ 25°C: 16ns/290ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 44 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
1200 V
40 A
120 A
2.5V @ 15V, 20A
180 W
2.85mJ (on), 6.47mJ (off)
Standard
50 nC
16ns/290ns
960V, 20A, 10Ohm, 15V
44 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
NGW30T60M3DFQ
Nexperia USA Inc.

IGBT TRENCH FS 600V 75A TO247-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 285 W
  • Switching Energy: 700µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 130 nC
  • Td (on/off) @ 25°C: 60ns/180ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 110 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3L
패키지: -
재고717
600 V
75 A
90 A
1.7V @ 15V, 30A
285 W
700µJ (on), 400µJ (off)
Standard
130 nC
60ns/180ns
400V, 30A, 10Ohm, 15V
110 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3L
IXYA20N65B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 108 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 500µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 29 nC
  • Td (on/off) @ 25°C: 12ns/103ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
Request a Quote
650 V
58 A
108 A
2.1V @ 15V, 20A
230 W
500µJ (on), 700µJ (off)
Standard
29 nC
12ns/103ns
400V, 20A, 20Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
HGT1S3N60B3S
Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 7 A
  • Current - Collector Pulsed (Icm): 20 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
  • Power - Max: 33.3 W
  • Switching Energy: 66µJ (on), 88µJ (off)
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 18ns/105ns
  • Test Condition: 480V, 3.5A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 16 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: -
Request a Quote
600 V
7 A
20 A
2.1V @ 15V, 3.5A
33.3 W
66µJ (on), 88µJ (off)
Standard
21 nC
18ns/105ns
480V, 3.5A, 82Ohm, 15V
16 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB