트랜지스터 - IGBT - 단일

IRGP4263D1-EPBF

Infineon Technologies

IGBT 600V TO247 COPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 192A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
• Power - Max: 325W
• Switching Energy: 2.9mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 70ns/140ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

IRGP6660DPBF

Infineon Technologies

IGBT 600V 95A 330W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 95A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 600µJ (on), 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 60ns/155ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRG4PSH71KD

Infineon Technologies

IGBT 1200V 78A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 156A
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
• Power - Max: 350W
• Switching Energy: 5.68mJ (on), 3.23mJ (off)
• Input Type: Standard
• Gate Charge: 410nC
• Td (on/off) @ 25°C: 67ns/230ns
• Test Condition: 800V, 42A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 107ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

패키지: TO-274AA

NGB8202NT4G

ON Semiconductor

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH60N60

IXYS

IGBT 600V 75A 300W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
• Power - Max: 300W
• Switching Energy: 8mJ (off)
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: 50ns/300ns
• Test Condition: 480V, 60A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IXSH35N100A

IXYS

IGBT 1000V 70A 300W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 35A
• Power - Max: 300W
• Switching Energy: 10mJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: 80ns/400ns
• Test Condition: 800V, 35A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

패키지: TO-247-3

IXGH17N100U1

IXYS

IGBT 1000V 34A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
• Power - Max: 150W
• Switching Energy: 3mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 100ns/500ns
• Test Condition: 800V, 17A, 82 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IKD06N60RAATMA2

Infineon Technologies

IGBT 600V 12A 100W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 12ns/127ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IXXX100N60B3H1

IXYS

IGBT 600V 200A 695W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 440A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
• Power - Max: 695W
• Switching Energy: 1.9mJ (on), 2mJ (off)
• Input Type: Standard
• Gate Charge: 143nC
• Td (on/off) @ 25°C: 30ns/120ns
• Test Condition: 360V, 70A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

패키지: TO-247-3

IXGK72N60C3H1

IXYS

IGBT TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

패키지: TO-264-3, TO-264AA

STGP19NC60SD

STMicroelectronics

IGBT 600V 40A 130W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
• Power - Max: 130W
• Switching Energy: 135µJ (on), 815µJ (off)
• Input Type: Standard
• Gate Charge: 54.5nC
• Td (on/off) @ 25°C: 17.5ns/175ns
• Test Condition: 480V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

패키지: TO-220-3

APT50GP60B2DQ2G

Microsemi Corporation

IGBT 600V 150A 625W TMAX

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 190A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 625W
• Switching Energy: 465µJ (on), 635µJ (off)
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 19ns/85ns
• Test Condition: 400V, 50A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

패키지: TO-247-3 Variant

STGW80H65DFB

STMicroelectronics

IGBT 650V 120A 469W TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
• Power - Max: 469W
• Switching Energy: 2.1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 414nC
• Td (on/off) @ 25°C: 84ns/280ns
• Test Condition: 400V, 80A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 85ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

RJP6085DPK-00#T0

Renesas Electronics America

IGBT 600V 40A 178.5W TO-3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
• Power - Max: 178.5W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

RJH60D1DPE-00#J3

Renesas Electronics America

IGBT 600V 20A 52W LDPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: 52W
• Switching Energy: 100µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 30ns/42ns
• Test Condition: 300V, 10A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK

패키지: SC-83

IXYX40N250CHV

IXYS

IGBT 2.5KV 70A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 380A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
• Power - Max: 1500W
• Switching Energy: 11.7mJ (on), 6.9mJ (off)
• Input Type: Standard
• Gate Charge: 270nC
• Td (on/off) @ 25°C: 21ns/200ns
• Test Condition: 1250V, 40A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247HV

패키지: TO-247-3

IRG4PSC71UDPBF

Infineon Technologies

IGBT 600V 85A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
• Power - Max: 350W
• Switching Energy: 3.26mJ (on), 2.27mJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: 90ns/245ns
• Test Condition: 480V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 82ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

패키지: TO-274AA

IXBH20N360HV

IXYS

IGBT 3600V 70A TO-247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
• Power - Max: 430W
• Switching Energy: 15.5mJ (on), 4.3mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 18ns/238ns
• Test Condition: 1500V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 1.7µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247HV

패키지: TO-247-3 Variant

IKP40N65H5XKSA1

Infineon Technologies

IGBT 650V 74A 255W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 390µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 22ns/165ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 62ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

패키지: TO-220-3

STGD3NB60SDT4

STMicroelectronics

IGBT 600V 6A 48W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6A
• Current - Collector Pulsed (Icm): 25A
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
• Power - Max: 48W
• Switching Energy: 1.15mJ (off)
• Input Type: Standard
• Gate Charge: 18nC
• Td (on/off) @ 25°C: 125µs/-
• Test Condition: 480V, 3A, 1 kOhm, 15V
• Reverse Recovery Time (trr): 1.7µs
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NGD8201ANT4G

Littelfuse Inc.

IGBT 440V 20A 125W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IXYQ40N65B3D1

IXYS

DISC IGBT XPT-GENX3 TO-3P (3)

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 86 A
• Current - Collector Pulsed (Icm): 195 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 300 W
• Switching Energy: 800µJ (on), 700µJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 20ns/140ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 37 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: -

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HGTP6N40EID

Harris Corporation

7.5A, 400V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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SIGC14T60NCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 15A, 18Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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RGS00TS65HRC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 88 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 326 W
• Switching Energy: 1.46mJ (on), 1.29mJ (off)
• Input Type: Standard
• Gate Charge: 58 nC
• Td (on/off) @ 25°C: 36ns/115ns
• Test Condition: 400V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

패키지: -

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IRF7805ZTRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IKQ75N120CS7XKSA1

Infineon Technologies

IGBT TRENCH 1200V 154A TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 154 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 630 W
• Switching Energy: 5.13mJ (on), 3.48mJ (off)
• Input Type: Standard
• Gate Charge: 450 nC
• Td (on/off) @ 25°C: 38ns/190ns
• Test Condition: 600V, 75A, 2.1Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

패키지: -

RGS40NL65DHRBTL

Rohm Semiconductor

IGBT TRENCH FS 650V 42A TO263L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 42 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 177 W
• Switching Energy: 560µJ (on), 490µJ (off)
• Input Type: Standard
• Gate Charge: 28 nC
• Td (on/off) @ 25°C: 24ns/87ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 93 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L

패키지: -