페이지 134 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  134/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P25N120KDPBF
Infineon Technologies

IGBT 1200V 40A 180W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 180W
  • Switching Energy: 800µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/170ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,048
1200V
40A
45A
2V @ 15V, 15A
180W
800µJ (on), 900µJ (off)
Standard
135nC
20ns/170ns
600V, 15A, 10 Ohm, 15V
70ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC30WSTRR
Infineon Technologies

IGBT D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,360
600V
23A
-
2.7V @ 15V, 12A
100W
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RJH60A81RDPD-A0#J2
Renesas Electronics America

IGBT 600V 5A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
  • Power - Max: 29.4W
  • Switching Energy: 130µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 30ns/40ns
  • Test Condition: 300V, 5A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,368
600V
10A
-
2.4V @ 15V, 5A
29.4W
130µJ (on), 60µJ (off)
Standard
11nC
30ns/40ns
300V, 5A, 5 Ohm, 15V
100ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
RJH1CF4RDPQ-80#T2
Renesas Electronics America

IGBT 1200V 40A 156.2W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 156.2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,144
1200V
40A
-
2.5V @ 15V, 20A
156.2W
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F3DPK-00#T0
Renesas Electronics America

IGBT 600V 40A 178.5W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 20A
  • Power - Max: 178.5W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고3,232
600V
40A
-
1.82V @ 15V, 20A
178.5W
-
Standard
-
-
-
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IXGH30N60B4
IXYS

IGBT 600V 66A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 66A
  • Current - Collector Pulsed (Icm): 156A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 440µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고390,000
600V
66A
156A
1.7V @ 15V, 24A
190W
440µJ (on), 700µJ (off)
Standard
77nC
21ns/200ns
400V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot FGA20S120M
Fairchild/ON Semiconductor

IGBT 1200V 40A 348W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
  • Power - Max: 348W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고105,048
1200V
40A
60A
1.85V @ 15V, 20A
348W
-
Standard
208nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXGB75N60BD1
IXYS

IGBT 600V 120A 360W PLUS264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 360W
  • Switching Energy: 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 248nC
  • Td (on/off) @ 25°C: 62ns/220ns
  • Test Condition: 480V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264?
패키지: TO-264-3, TO-264AA
재고5,760
600V
120A
300A
2.3V @ 15V, 75A
360W
3.3mJ (off)
Standard
248nC
62ns/220ns
480V, 75A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
PLUS264?
IXST30N60B
IXYS

IGBT 600V 55A 200W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/150ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고2,720
600V
55A
110A
2V @ 15V, 30A
200W
1.5mJ (off)
Standard
100nC
30ns/150ns
480V, 30A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXSQ20N60B2D1
IXYS

IGBT 600V 35A 190W TO3P

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
  • Power - Max: 190W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 30ns/116ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고4,992
600V
35A
-
2.5V @ 15V, 16A
190W
380µJ (off)
Standard
33nC
30ns/116ns
-
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGK50N60B
IXYS

IGBT 600V 75A 300W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고3,824
600V
75A
200A
2.3V @ 15V, 50A
300W
3mJ (off)
Standard
160nC
50ns/150ns
480V, 50A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IRG4PH40UD-EPBF
Infineon Technologies

IGBT 1200V 41A 160W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 82A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
  • Power - Max: 160W
  • Switching Energy: 1.8mJ (on), 1.93mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 46ns/97ns
  • Test Condition: 800V, 21A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 63ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,176
1200V
41A
82A
3.1V @ 15V, 21A
160W
1.8mJ (on), 1.93mJ (off)
Standard
86nC
46ns/97ns
800V, 21A, 10 Ohm, 15V
63ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IGB50N65S5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,808
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGR50N160H1
IXYS

IGBT 1600V 75A 240W ISOPLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 330A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 240W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 137nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,600
1600V
75A
330A
2.3V @ 15V, 50A
240W
-
Standard
137nC
-
-
230ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
APT50GS60BRDLG
Microsemi Corporation

IGBT 600V 93A 415W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 93A
  • Current - Collector Pulsed (Icm): 195A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 415W
  • Switching Energy: 755µJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 16ns/225ns
  • Test Condition: 400V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,720
600V
93A
195A
3.15V @ 15V, 50A
415W
755µJ (off)
Standard
235nC
16ns/225ns
400V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IXGH28N90B
IXYS

IGBT 900V 51A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/100ns
  • Test Condition: 720V, 28A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고390,000
900V
51A
120A
2.7V @ 15V, 28A
200W
1.2mJ (off)
Standard
100nC
30ns/100ns
720V, 28A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGDL6NC60DT4
STMicroelectronics

IGBT 600V 13A 50W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 50W
  • Switching Energy: 46.5µJ (on), 23.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,792
600V
13A
25A
2.9V @ 15V, 3A
50W
46.5µJ (on), 23.5µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
STGYA120M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
  • Power - Max: 625W
  • Switching Energy: 1.8mJ (on), 4.41mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 66ns/185ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 202ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Exposed Pad
  • Supplier Device Package: MAX247?
패키지: TO-247-3 Exposed Pad
재고9,312
650V
160A
360A
1.95V @ 15V, 120A
625W
1.8mJ (on), 4.41mJ (off)
Standard
420nC
66ns/185ns
400V, 120A, 4.7 Ohm, 15V
202ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Exposed Pad
MAX247?
hot STGWA60H65DFB
STMicroelectronics

IGBT BIPO 650V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 1.59mJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: 66ns/210ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고12,684
650V
80A
240A
2V @ 15V, 60A
375W
1.59mJ (on), 900µJ (off)
Standard
306nC
66ns/210ns
400V, 60A, 10 Ohm, 15V
60ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IKQ100N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 166A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 166 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
  • Power - Max: 721 W
  • Switching Energy: 6.7mJ (on), 2.52mJ (off)
  • Input Type: Standard
  • Gate Charge: 696 nC
  • Td (on/off) @ 25°C: 66ns/547ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 148 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-U01
패키지: -
재고600
1200 V
166 A
400 A
2.15V @ 15V, 100A
721 W
6.7mJ (on), 2.52mJ (off)
Standard
696 nC
66ns/547ns
-
148 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-U01
HGTP20N35F3ULR3935
Harris Corporation

20A, 350V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGT00TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 42ns/137ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
85 A
150 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
42ns/137ns
400V, 50A, 10Ohm, 15V
54 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
IXYX110N120C4
IXYS

IGBT 1200V 310A PLUS247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 310 A
  • Current - Collector Pulsed (Icm): 740 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 3.6mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 330 nC
  • Td (on/off) @ 25°C: 40ns/320ns
  • Test Condition: 600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 48 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
재고24
1200 V
310 A
740 A
2.4V @ 15V, 110A
1360 W
3.6mJ (on), 1.9mJ (off)
Standard
330 nC
40ns/320ns
600V, 50A, 2Ohm, 15V
48 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
NGB15N41CLT4G
onsemi

IGBT N-CHAN 15A 410V D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 4.5V, 10A
  • Power - Max: 107 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: -
Request a Quote
440 V
15 A
50 A
2.1V @ 4.5V, 10A
107 W
-
Logic
-
-/4µs
300V, 6.5A, 1kOhm
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
IKW75N65RH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 360µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 168 nC
  • Td (on/off) @ 25°C: 26ns/180ns
  • Test Condition: 400V, 37.5A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고837
650 V
80 A
300 A
2.1V @ 15V, 75A
395 W
360µJ (on), 300µJ (off)
Standard
168 nC
26ns/180ns
400V, 37.5A, 9Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGHL40T65MQDT
onsemi

FS4 MID SPEED IGBT 650V 40A TO24

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 238 W
  • Switching Energy: 880µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: 18ns/75ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 86 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,023
650 V
60 A
160 A
1.8V @ 15V, 40A
238 W
880µJ (on), 490µJ (off)
Standard
80 nC
18ns/75ns
400V, 40A, 6Ohm, 15V
86 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
BIDW40N65ES5
Bourns Inc.

IGBT TRENCH FS 650V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: 0.58mJ (on), 0.63mJ (off)
  • Input Type: Standard
  • Gate Charge: 107 nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 106 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
650 V
80 A
160 A
1.7V @ 15V, 40A
230 W
0.58mJ (on), 0.63mJ (off)
Standard
107 nC
28ns/150ns
400V, 40A, 10Ohm, 15V
106 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGSX5TS65EHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 114A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 114 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 404 W
  • Switching Energy: 3.44mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 43ns/113ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 116 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,170
650 V
114 A
225 A
2.15V @ 15V, 75A
404 W
3.44mJ (on), 1.9mJ (off)
Standard
79 nC
43ns/113ns
400V, 75A, 10Ohm, 15V
116 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N