페이지 43 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRG7CH50UEF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,128

-

IKP03N120H2XKSA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 9.6A
Current - Collector Pulsed (Icm): 9.9A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Power - Max: 62.5W
Switching Energy: 290µJ
Input Type: Standard
Gate Charge: 22nC
Td (on/off) @ 25°C: 9.2ns/281ns
Test Condition: 800V, 3A, 82 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3

패키지: TO-220-3

재고4,064

1200V

9.6A

9.9A

2.8V @ 15V, 3A

62.5W

290µJ

Standard

22nC

9.2ns/281ns

800V, 3A, 82 Ohm, 15V

42ns

-40°C ~ 150°C (TJ)

Through Hole

TO-220-3

PG-TO220-3

IXGH10N300

IXYS

IGBT 3000V 18A 100W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 18A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Power - Max: 100W
Switching Energy: -
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고7,072

3000V

18A

40A

5.2V @ 15V, 30A

100W

-

Standard

32nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

STGP7NB60HD

STMicroelectronics

IGBT 600V 14A 80W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Power - Max: 80W
Switching Energy: 85µJ (off)
Input Type: Standard
Gate Charge: 42nC
Td (on/off) @ 25°C: 15ns/75ns
Test Condition: 480V, 7A, 10 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,936

600V

14A

56A

2.8V @ 15V, 7A

80W

85µJ (off)

Standard

42nC

15ns/75ns

480V, 7A, 10 Ohm, 15V

100ns

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

ISL9V5036P3

Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 390V
Current - Collector (Ic) (Max): 46A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Power - Max: 250W
Switching Energy: -
Input Type: Logic
Gate Charge: 32nC
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1 kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고147,600

390V

46A

-

1.6V @ 4V, 10A

250W

-

Logic

32nC

-/10.8µs

300V, 1 kOhm, 5V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-220-3

STGP7NB60KD

STMicroelectronics

IGBT 600V 14A 80W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Power - Max: 80W
Switching Energy: 140µJ (off)
Input Type: Standard
Gate Charge: 32.7nC
Td (on/off) @ 25°C: 15ns/50ns
Test Condition: 480V, 7A, 10 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고108,024

600V

14A

56A

2.8V @ 15V, 7A

80W

140µJ (off)

Standard

32.7nC

15ns/50ns

480V, 7A, 10 Ohm, 15V

50ns

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXYH16N250C

IXYS

IGBT 2500V 35A TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): 126A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Power - Max: 500W
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Input Type: Standard
Gate Charge: 97nC
Td (on/off) @ 25°C: 14ns/260ns
Test Condition: 1250V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): 19ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고5,952

2500V

35A

126A

4V @ 15V, 16A

500W

4.75mJ (on), 3.9mJ (off)

Standard

97nC

14ns/260ns

1250V, 16A, 10 Ohm, 15V

19ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

IXGH90N60B3

IXYS

IGBT 600V 75A 660W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 500A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 90A
Power - Max: 660W
Switching Energy: 1.32mJ (on), 1.37mJ (off)
Input Type: Standard
Gate Charge: 172nC
Td (on/off) @ 25°C: 31ns/150ns
Test Condition: 480V, 60A, 2 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고390,000

600V

75A

500A

1.8V @ 15V, 90A

660W

1.32mJ (on), 1.37mJ (off)

Standard

172nC

31ns/150ns

480V, 60A, 2 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IXGH56N60B3D1

IXYS

IGBT 600V 330W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 350A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Power - Max: 330W
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 138nC
Td (on/off) @ 25°C: 26ns/155ns
Test Condition: 480V, 44A, 5 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고390,000

600V

-

350A

1.8V @ 15V, 44A

330W

1.3mJ (on), 1.05mJ (off)

Standard

138nC

26ns/155ns

480V, 44A, 5 Ohm, 15V

100ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

RJH65T14DPQ-A0#T0

Renesas Electronics America

IGBT TRENCH 650V 100A TO247A

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Power - Max: 250W
Switching Energy: 1.3mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 38ns/125ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): 250ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247A

패키지: TO-247-3

재고2,880

650V

100A

-

1.75V @ 15V, 50A

250W

1.3mJ (on), 1.2mJ (off)

Standard

80nC

38ns/125ns

400V, 50A, 10 Ohm, 15V

250ns

175°C (TJ)

Through Hole

TO-247-3

TO-247A

IXGQ20N120BD1

IXYS

IGBT 1200V 40A 190W TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Power - Max: 190W
Switching Energy: 2.1mJ (off)
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: 20ns/270ns
Test Condition: 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고7,312

1200V

40A

100A

3.4V @ 15V, 20A

190W

2.1mJ (off)

Standard

62nC

20ns/270ns

960V, 20A, 10 Ohm, 15V

40ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

STGF30V60DF

STMicroelectronics

IGBT BIPO 600V 30A TO-220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,280

-

NGD18N40ACLBT4G

Littelfuse Inc.

IGBT 430V 15A 115W DPAK-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Power - Max: 115W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고100,968

430V

15A

50A

2.5V @ 4V, 15A

115W

-

Logic

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

AUIRGP50B60PD1

Infineon Technologies

IGBT 600V 75A 390W TO247AC

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Power - Max: 390W
Switching Energy: 255µJ (on), 375µJ (off)
Input Type: Standard
Gate Charge: 205nC
Td (on/off) @ 25°C: 30ns/130ns
Test Condition: 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고4,528

600V

75A

150A

2.85V @ 15V, 50A

390W

255µJ (on), 375µJ (off)

Standard

205nC

30ns/130ns

390V, 33A, 3.3 Ohm, 15V

42ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRG4BC20FPBF

Infineon Technologies

IGBT 600V 16A 60W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Power - Max: 60W
Switching Energy: 70µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 24ns/190ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고6,672

600V

16A

64A

2V @ 15V, 9A

60W

70µJ (on), 600µJ (off)

Standard

27nC

24ns/190ns

480V, 9A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

FGA25N120ANTDTU_F109

Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

IGBT Type: NPT and Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Power - Max: 312W
Switching Energy: 4.1mJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 50ns/190ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고6,480

1200V

50A

90A

2.65V @ 15V, 50A

312W

4.1mJ (on), 960µJ (off)

Standard

200nC

50ns/190ns

600V, 25A, 10 Ohm, 15V

350ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

FGH80N60FDTU

Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 290W
Switching Energy: 1mJ (on), 520µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 21ns/126ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 36ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,108

600V

80A

160A

2.4V @ 15V, 40A

290W

1mJ (on), 520µJ (off)

Standard

120nC

21ns/126ns

400V, 40A, 10 Ohm, 15V

36ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

STGWT80V60F

STMicroelectronics

IGBT 600V 120A 469W TO-3P

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Power - Max: 469W
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고8,124

600V

120A

240A

2.3V @ 15V, 80A

469W

1.8mJ (on), 1mJ (off)

Standard

448nC

60ns/220ns

400V, 80A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

SIGC42T60UNX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 48ns/350ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

50 A

150 A

3.15V @ 15V, 50A

-

Standard

-

48ns/350ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

STGB25N36LZAG

STMicroelectronics

DISCRETE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 25 A
Current - Collector Pulsed (Icm): 50 A
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: 25.7 nC
Td (on/off) @ 25°C: 1.1µs/7.4µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

패키지: -

Request a Quote

350 V

25 A

50 A

1.25V @ 4V, 6A

150 W

-

Logic

25.7 nC

1.1µs/7.4µs

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

RJQ7031PJWS-00-W0

Renesas Electronics Corporation

POWER TRS1 CAR POWER IGBT DIO SA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IGC20T60TEX7SA1

Infineon Technologies

IGBT 600V 20A WAFER

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RGT30NS65DGC9

Rohm Semiconductor

IGBT TRENCH FIELD 650V 30A TO262

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 133 W
Switching Energy: -
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 55 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262

패키지: -

재고8,718

650 V

30 A

45 A

2.1V @ 15V, 15A

133 W

-

Standard

32 nC

18ns/64ns

400V, 15A, 10Ohm, 15V

55 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262

SIGC42T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

43ns/130ns

300V, 50A, 3.3Ohm, 15V

-

-55°C ~ 150°C

Surface Mount

Die

FGH40T70SHD-F155

onsemi

650V FS GEN3 TRENCH IGBT

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Power - Max: 268 W
Switching Energy: 1.15mJ (on), 271µJ (off)
Input Type: Standard
Gate Charge: 69 nC
Td (on/off) @ 25°C: 22ns/66ns
Test Condition: 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr): 37 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: -

Request a Quote

700 V

80 A

120 A

2.15V @ 15V, 40A

268 W

1.15mJ (on), 271µJ (off)

Standard

69 nC

22ns/66ns

400V, 40A, 6Ohm, 15V

37 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

IKFW60N65ES5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 77A HSIP247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 77 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Power - Max: 138 W
Switching Energy: 1.23mJ (on), 550µJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 20ns/127ns
Test Condition: 400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr): 77 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-HSIP247-3-2

패키지: -

재고15

650 V

77 A

200 A

1.7V @ 15V, 50A

138 W

1.23mJ (on), 550µJ (off)

Standard

120 nC

20ns/127ns

400V, 50A, 8.2Ohm, 15V

77 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-HSIP247-3-2

LGD18N45TH

Littelfuse Inc.

IGBT 500V 18A TO252

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 18 A
Current - Collector Pulsed (Icm): 50 A
Vce(on) (Max) @ Vge, Ic: -
Power - Max: 115 W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: 0.42µs/2.9µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

패키지: -

Request a Quote

500 V

18 A

50 A

-

115 W

-

Logic

-

0.42µs/2.9µs

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

HGT1S3N60C3D

Harris Corporation

6A, 600V, N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Power - Max: 33 W
Switching Energy: -
Input Type: Standard
Gate Charge: 13.8 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: I2PAK (TO-262)

패키지: -

Request a Quote

600 V

6 A

24 A

2V @ 15V, 3A

33 W

-

Standard

13.8 nC

-

-40°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

I2PAK (TO-262)

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7CH50UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKP03N120H2XKSA1	Infineon Technologies	IGBT 1200V 9.6A 62.5W TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290µJ Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	패키지: TO-220-3	재고4,064	1200V	9.6A	9.9A	2.8V @ 15V, 3A	62.5W	290µJ	Standard	22nC	9.2ns/281ns	800V, 3A, 82 Ohm, 15V	42ns	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	PG-TO220-3
IXGH10N300	IXYS	IGBT 3000V 18A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고7,072	3000V	18A	40A	5.2V @ 15V, 30A	100W	-	Standard	32nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
STGP7NB60HD	STMicroelectronics	IGBT 600V 14A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Power - Max: 80W Switching Energy: 85µJ (off) Input Type: Standard Gate Charge: 42nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,936	600V	14A	56A	2.8V @ 15V, 7A	80W	85µJ (off)	Standard	42nC	15ns/75ns	480V, 7A, 10 Ohm, 15V	100ns	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ISL9V5036P3	Fairchild/ON Semiconductor	IGBT 390V 46A 250W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 46A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Power - Max: 250W Switching Energy: - Input Type: Logic Gate Charge: 32nC Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고147,600	390V	46A	-	1.6V @ 4V, 10A	250W	-	Logic	32nC	-/10.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STGP7NB60KD	STMicroelectronics	IGBT 600V 14A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Power - Max: 80W Switching Energy: 140µJ (off) Input Type: Standard Gate Charge: 32.7nC Td (on/off) @ 25°C: 15ns/50ns Test Condition: 480V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고108,024	600V	14A	56A	2.8V @ 15V, 7A	80W	140µJ (off)	Standard	32.7nC	15ns/50ns	480V, 7A, 10 Ohm, 15V	50ns	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXYH16N250C	IXYS	IGBT 2500V 35A TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 126A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Power - Max: 500W Switching Energy: 4.75mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 14ns/260ns Test Condition: 1250V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 19ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고5,952	2500V	35A	126A	4V @ 15V, 16A	500W	4.75mJ (on), 3.9mJ (off)	Standard	97nC	14ns/260ns	1250V, 16A, 10 Ohm, 15V	19ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IXGH90N60B3	IXYS	IGBT 600V 75A 660W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 90A Power - Max: 660W Switching Energy: 1.32mJ (on), 1.37mJ (off) Input Type: Standard Gate Charge: 172nC Td (on/off) @ 25°C: 31ns/150ns Test Condition: 480V, 60A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고390,000	600V	75A	500A	1.8V @ 15V, 90A	660W	1.32mJ (on), 1.37mJ (off)	Standard	172nC	31ns/150ns	480V, 60A, 2 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGH56N60B3D1	IXYS	IGBT 600V 330W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 350A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A Power - Max: 330W Switching Energy: 1.3mJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 138nC Td (on/off) @ 25°C: 26ns/155ns Test Condition: 480V, 44A, 5 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고390,000	600V	-	350A	1.8V @ 15V, 44A	330W	1.3mJ (on), 1.05mJ (off)	Standard	138nC	26ns/155ns	480V, 44A, 5 Ohm, 15V	100ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
RJH65T14DPQ-A0#T0	Renesas Electronics America	IGBT TRENCH 650V 100A TO247A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Power - Max: 250W Switching Energy: 1.3mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 38ns/125ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 250ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	패키지: TO-247-3	재고2,880	650V	100A	-	1.75V @ 15V, 50A	250W	1.3mJ (on), 1.2mJ (off)	Standard	80nC	38ns/125ns	400V, 50A, 10 Ohm, 15V	250ns	175°C (TJ)	Through Hole	TO-247-3	TO-247A
IXGQ20N120BD1	IXYS	IGBT 1200V 40A 190W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Power - Max: 190W Switching Energy: 2.1mJ (off) Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 20ns/270ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고7,312	1200V	40A	100A	3.4V @ 15V, 20A	190W	2.1mJ (off)	Standard	62nC	20ns/270ns	960V, 20A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
STGF30V60DF	STMicroelectronics	IGBT BIPO 600V 30A TO-220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,280	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGD18N40ACLBT4G	Littelfuse Inc.	IGBT 430V 15A 115W DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A Power - Max: 115W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고100,968	430V	15A	50A	2.5V @ 4V, 15A	115W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
AUIRGP50B60PD1	Infineon Technologies	IGBT 600V 75A 390W TO247AC IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255µJ (on), 375µJ (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 390V, 33A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고4,528	600V	75A	150A	2.85V @ 15V, 50A	390W	255µJ (on), 375µJ (off)	Standard	205nC	30ns/130ns	390V, 33A, 3.3 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC20FPBF	Infineon Technologies	IGBT 600V 16A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 60W Switching Energy: 70µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 24ns/190ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고6,672	600V	16A	64A	2V @ 15V, 9A	60W	70µJ (on), 600µJ (off)	Standard	27nC	24ns/190ns	480V, 9A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
FGA25N120ANTDTU_F109	Fairchild/ON Semiconductor	IGBT 1200V 50A 312W TO3P IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Power - Max: 312W Switching Energy: 4.1mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 50ns/190ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고6,480	1200V	50A	90A	2.65V @ 15V, 50A	312W	4.1mJ (on), 960µJ (off)	Standard	200nC	50ns/190ns	600V, 25A, 10 Ohm, 15V	350ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
FGH80N60FDTU	Fairchild/ON Semiconductor	IGBT 600V 80A 290W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 290W Switching Energy: 1mJ (on), 520µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 21ns/126ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 36ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,108	600V	80A	160A	2.4V @ 15V, 40A	290W	1mJ (on), 520µJ (off)	Standard	120nC	21ns/126ns	400V, 40A, 10 Ohm, 15V	36ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGWT80V60F	STMicroelectronics	IGBT 600V 120A 469W TO-3P IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Power - Max: 469W Switching Energy: 1.8mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 448nC Td (on/off) @ 25°C: 60ns/220ns Test Condition: 400V, 80A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고8,124	600V	120A	240A	2.3V @ 15V, 80A	469W	1.8mJ (on), 1mJ (off)	Standard	448nC	60ns/220ns	400V, 80A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
SIGC42T60UNX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
STGB25N36LZAG	STMicroelectronics	DISCRETE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 25 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 25.7 nC Td (on/off) @ 25°C: 1.1µs/7.4µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	패키지: -	Request a Quote	350 V	25 A	50 A	1.25V @ 4V, 6A	150 W	-	Logic	25.7 nC	1.1µs/7.4µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
RJQ7031PJWS-00-W0	Renesas Electronics Corporation	POWER TRS1 CAR POWER IGBT DIO SA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGC20T60TEX7SA1	Infineon Technologies	IGBT 600V 20A WAFER IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGT30NS65DGC9	Rohm Semiconductor	IGBT TRENCH FIELD 650V 30A TO262 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 133 W Switching Energy: - Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262	패키지: -	재고8,718	650 V	30 A	45 A	2.1V @ 15V, 15A	133 W	-	Standard	32 nC	18ns/64ns	400V, 15A, 10Ohm, 15V	55 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262
SIGC42T60NCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 43ns/130ns Test Condition: 300V, 50A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	43ns/130ns	300V, 50A, 3.3Ohm, 15V	-	-55°C ~ 150°C	Surface Mount	Die	Die
FGH40T70SHD-F155	onsemi	650V FS GEN3 TRENCH IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 700 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Power - Max: 268 W Switching Energy: 1.15mJ (on), 271µJ (off) Input Type: Standard Gate Charge: 69 nC Td (on/off) @ 25°C: 22ns/66ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 37 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: -	Request a Quote	700 V	80 A	120 A	2.15V @ 15V, 40A	268 W	1.15mJ (on), 271µJ (off)	Standard	69 nC	22ns/66ns	400V, 40A, 6Ohm, 15V	37 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IKFW60N65ES5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 77A HSIP247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 77 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Power - Max: 138 W Switching Energy: 1.23mJ (on), 550µJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 20ns/127ns Test Condition: 400V, 50A, 8.2Ohm, 15V Reverse Recovery Time (trr): 77 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-HSIP247-3-2	패키지: -	재고15	650 V	77 A	200 A	1.7V @ 15V, 50A	138 W	1.23mJ (on), 550µJ (off)	Standard	120 nC	20ns/127ns	400V, 50A, 8.2Ohm, 15V	77 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
LGD18N45TH	Littelfuse Inc.	IGBT 500V 18A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 18 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 115 W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: 0.42µs/2.9µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	패키지: -	Request a Quote	500 V	18 A	50 A	-	115 W	-	Logic	-	0.42µs/2.9µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
HGT1S3N60C3D	Harris Corporation	6A, 600V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Power - Max: 33 W Switching Energy: - Input Type: Standard Gate Charge: 13.8 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: I2PAK (TO-262)	패키지: -	Request a Quote	600 V	6 A	24 A	2V @ 15V, 3A	33 W	-	Standard	13.8 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	I2PAK (TO-262)