페이지 44 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  44/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKD15N60R
Infineon Technologies

IGBT 600V 30A 250W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 900µJ
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,456
600V
30A
45A
2.1V @ 15V, 15A
250W
900µJ
Standard
90nC
16ns/183ns
400V, 15A, 15 Ohm, 15V
110ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
SGL5N150UFTU
Fairchild/ON Semiconductor

IGBT 1500V 10A 125W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1500V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
  • Power - Max: 125W
  • Switching Energy: 190µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 10ns/30ns
  • Test Condition: 600V, 5A, 10 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고2,992
1500V
10A
20A
5.5V @ 10V, 5A
125W
190µJ (on), 100µJ (off)
Standard
30nC
10ns/30ns
600V, 5A, 10 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot SGP6N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 6A 30W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
  • Power - Max: 30W
  • Switching Energy: 57µJ (on), 25µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 15ns/60ns
  • Test Condition: 300V, 3A, 80 Ohm, 15V
  • Reverse Recovery Time (trr): 52ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고17,100
600V
6A
25A
2.6V @ 15V, 3A
30W
57µJ (on), 25µJ (off)
Standard
15nC
15ns/60ns
300V, 3A, 80 Ohm, 15V
52ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot IXGH25N100A
IXYS

IGBT 1000V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 25A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고117,912
1000V
50A
100A
4V @ 15V, 25A
200W
5mJ (off)
Standard
130nC
100ns/500ns
800V, 25A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
SKW30N60FKSA1
Infineon Technologies

IGBT 600V 41A 250W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.29mJ
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 44ns/291ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): 400ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,464
600V
41A
112A
2.4V @ 15V, 30A
250W
1.29mJ
Standard
140nC
44ns/291ns
400V, 30A, 11 Ohm, 15V
400ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4BC30FDSTRRP
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,072
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGT15N120BD1
IXYS

IGBT 1200V 30A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,856
1200V
30A
60A
3.2V @ 15V, 15A
150W
1.75mJ (off)
Standard
69nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot NGTB15N60R2FG
ON Semiconductor

IGBT 15A 600V TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 54W
  • Switching Energy: 550µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 70ns/190ns
  • Test Condition: 300V, 15A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3FS
패키지: TO-220-3 Full Pack
재고66,384
600V
24A
60A
2.1V @ 15V, 15A
54W
550µJ (on), 220µJ (off)
Standard
80nC
70ns/190ns
300V, 15A, 30 Ohm, 15V
95ns
175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3FS
IXYP10N65C3
IXYS

IGBT 650V 30A 160W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 160W
  • Switching Energy: 240µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 20ns/77ns
  • Test Condition: 400V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,984
650V
30A
54A
2.5V @ 15V, 10A
160W
240µJ (on), 110µJ (off)
Standard
18nC
20ns/77ns
400V, 10A, 50 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXBT20N300HV
IXYS

IGBT 3000V 50A 250W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.35µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,416
3000V
50A
140A
3.2V @ 15V, 20A
250W
-
Standard
105nC
-
-
1.35µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IGB30N60H3ATMA1
Infineon Technologies

IGBT 600V 60A 187W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.17mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,600
600V
60A
120A
2.4V @ 15V, 30A
187W
1.17mJ
Standard
165nC
18ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IRGS10B60KDTRLP
Infineon Technologies

IGBT 600V 22A 156W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,168
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGH20N60SFDTU_F085
Fairchild/ON Semiconductor

IGBT 600V 20A 165W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 430µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고9,480
600V
40A
60A
2.8V @ 15V, 20A
165W
430µJ (on), 130µJ (off)
Standard
66nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRG4BC30WPBF
Infineon Technologies

IGBT 600V 23A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고16,572
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
SIGC25T60NCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IHFW40N65R5SXKSA1
Infineon Technologies

IGBT TRENCH FS 650V 61A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 61 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 108 W
  • Switching Energy: 1.52mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 142 nC
  • Td (on/off) @ 25°C: 44ns/363ns
  • Test Condition: 400V, 40A, 23.1Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
패키지: -
재고1,218
650 V
61 A
120 A
2V @ 15V, 40A
108 W
1.52mJ (on), 700µJ (off)
Standard
142 nC
44ns/363ns
400V, 40A, 23.1Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
SIGC15T60EX7SA2
Infineon Technologies

IGBT 3 CHIP 600V 30A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXXH30N65C4D1
IXYS

IGBT 650V 62A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 62 A
  • Current - Collector Pulsed (Icm): 136 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 230 W
  • Switching Energy: 1.1mJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 20ns/140ns
  • Test Condition: 400V, 30A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 72 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXXH)
패키지: -
Request a Quote
650 V
62 A
136 A
2.5V @ 15V, 30A
230 W
1.1mJ (on), 400µJ (off)
Standard
47 nC
20ns/140ns
400V, 30A, 15Ohm, 15V
72 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
RGT50TM65DGC9
Rohm Semiconductor

IGBT TRNCH FLD 650V 21A TO220NFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 47 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NFM
패키지: -
재고2,880
650 V
21 A
75 A
2.1V @ 15V, 25A
47 W
-
Standard
49 nC
27ns/88ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NFM
AIKB40N65DF5ATMA1
Infineon Technologies

IGBT NPT 650V 40A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
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650 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
RGT80TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/119ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 236 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
70 A
120 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/119ns
400V, 40A, 10Ohm, 15V
236 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGTV00TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 95A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 276 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
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650 V
95 A
200 A
1.9V @ 15V, 50A
276 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IEWS20R5135IPBXKLA1
Infineon Technologies

HOME APPLIANCES 14

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 0V, 20A
  • Power - Max: 288 W
  • Switching Energy: -, 1.2mJ (off)
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: 668ns/2.034µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-6
  • Supplier Device Package: PG-TO247-6
패키지: -
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1350 V
40 A
60 A
1.85V @ 0V, 20A
288 W
-, 1.2mJ (off)
Logic
-
668ns/2.034µs
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-6
PG-TO247-6
IXYH40N120A4
IXYS

IGBT 1200V 40A GENX4 XPT TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 275 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 600 W
  • Switching Energy: 2.3mJ (on), 3.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 22ns/204ns
  • Test Condition: 600V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
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1200 V
140 A
275 A
1.8V @ 15V, 32A
600 W
2.3mJ (on), 3.75mJ (off)
Standard
90 nC
22ns/204ns
600V, 32A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
RJP3034DPP-B1-T2F
Renesas Electronics Corporation

HIGH SPEED IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKP28N65ES5XKSA1
Infineon Technologies

IGBT 650V 28A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 28A
  • Power - Max: 130 W
  • Switching Energy: 530µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 50 nC
  • Td (on/off) @ 25°C: 27ns/184ns
  • Test Condition: 400V, 28A, 34Ohm, 15V
  • Reverse Recovery Time (trr): 73 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: -
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650 V
38 A
90 A
1.9V @ 15V, 28A
130 W
530µJ (on), 400µJ (off)
Standard
50 nC
27ns/184ns
400V, 28A, 34Ohm, 15V
73 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
FGH40T120SMD-F155
onsemi

IGBT TRENCH FS 1200V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 2.7mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370 nC
  • Td (on/off) @ 25°C: 40ns/475ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,335
1200 V
80 A
160 A
2.4V @ 15V, 40A
555 W
2.7mJ (on), 1.1mJ (off)
Standard
370 nC
40ns/475ns
600V, 40A, 10Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGTV80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: 1.02mJ (on), 710µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 39ns/113ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
78 A
160 A
1.9V @ 15V, 40A
234 W
1.02mJ (on), 710µJ (off)
Standard
81 nC
39ns/113ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N