트랜지스터 - IGBT - 단일

IRG8CH29K10F

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: 40ns/245ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: Die

IRGP4063D-EPBF

Infineon Technologies

IGBT 600V 96A 330W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

IRGR4045DPBF

Infineon Technologies

IGBT 600V 12A 77W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGPC50FD2

Infineon Technologies

IGBT W/DIODE 600V 70A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IXSK50N60BU1

IXYS

IGBT 600V 75A 300W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 3.3mJ (off)
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 70ns/150ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264AA(IXSK)

패키지: TO-264-3, TO-264AA

IXGQ90N33TC

IXYS

IGBT 330V 90A 200W TO3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

FGPF30N45TTU

Fairchild/ON Semiconductor

IGBT 450V 50.4W TO220F

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 450V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
• Power - Max: 50.4W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 73nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

STGP19NC60WD

STMicroelectronics

IGBT 600V 40A 125W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 125W
• Switching Energy: 81µJ (on), 125µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 25ns/90ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

NGB8206NT4

ON Semiconductor

IGBT 390V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HGT1S20N35G3VLS

Fairchild/ON Semiconductor

IGBT 380V 20A 150W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 375V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 28.7nC
• Td (on/off) @ 25°C: -/15µs
• Test Condition: 300V, 10A, 25 Ohm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC20UD-SPBF

Infineon Technologies

IGBT 600V 13A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 160µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 39ns/93ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH28N60B3D1

IXYS

IGBT 600V 66A 190W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 66A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 340µJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 19ns/125ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

NGTB50N60S1WG

ON Semiconductor

IGBT 50A 600V TO-247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 417W
• Switching Energy: 1.5mJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 100ns/237ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 94ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

HGTP7N60A4_F102

Fairchild/ON Semiconductor

N-CH / 7A 600V SMPS 1 IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125W
• Switching Energy: 55µJ (on), 150µJ (off)
• Input Type: Standard
• Gate Charge: 60nC
• Td (on/off) @ 25°C: 11ns/100ns
• Test Condition: 390V, 7A, 25 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

FGH60N60UFDTU

Fairchild/ON Semiconductor

IGBT 600V 120A 298W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
• Power - Max: 298W
• Switching Energy: 1.81mJ (on), 810µJ (off)
• Input Type: Standard
• Gate Charge: 188nC
• Td (on/off) @ 25°C: 23ns/130ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 47ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

STGW40H65DFB

STMicroelectronics

IGBT 650V 80A 283W TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 498µJ (on), 363µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 40ns/142ns
• Test Condition: 400V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 62ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

STGD18N40LZT4

STMicroelectronics

IGBT 420V 25A 125W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 420V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 29nC
• Td (on/off) @ 25°C: 650ns/13.5µs
• Test Condition: 300V, 10A, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IKA08N65F5XKSA1

Infineon Technologies

IGBT 650V 10.8A 31.2W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 10.8A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
• Power - Max: 31.2W
• Switching Energy: 70µJ (on), 20µJ (off)
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 10ns/116ns
• Test Condition: 400V, 4A, 48 Ohm, 15V
• Reverse Recovery Time (trr): 41ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

패키지: TO-220-3

RGW00TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 45A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 45 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Power - Max: 89 W
• Switching Energy: 1.18mJ (on), 960µJ (off)
• Input Type: Standard
• Gate Charge: 141 nC
• Td (on/off) @ 25°C: 52ns/180ns
• Test Condition: 400V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

패키지: -

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STGW60H65DFB-4

STMicroelectronics

IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 240 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
• Power - Max: 375 W
• Switching Energy: 346µJ (on), 1.161mJ (off)
• Input Type: Standard
• Gate Charge: 306 nC
• Td (on/off) @ 25°C: 65ns/261ns
• Test Condition: 400V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): 60 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4

패키지: -

SIGC39T60EX1SA3

Infineon Technologies

IGBT TRENCH FS 600V 75A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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AIKB40N65DH5ATMA1

Infineon Technologies

IGBT NPT 650V 40A TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

패키지: -

AIKB50N65DH5ATMA1

Infineon Technologies

DISCRETE SWITCHES

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

패키지: -

SIGC42T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 43ns/130ns
• Test Condition: 300V, 50A, 3.3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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IXYN75N65C3D1

IXYS

IGBT 650V 150A SOT227B

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 360 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 600 W
• Switching Energy: 2mJ (on), 950µJ (off)
• Input Type: Standard
• Gate Charge: 122 nC
• Td (on/off) @ 25°C: 26ns/93ns
• Test Condition: 400V, 60A, 3Ohm, 15V
• Reverse Recovery Time (trr): 65 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: -

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STGD20N45LZAG

STMicroelectronics

POWER TRANSISTORS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 450 V
• Current - Collector (Ic) (Max): 25 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 125 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 26 nC
• Td (on/off) @ 25°C: 1.1µs/4.6µs
• Test Condition: 300V, 10A, 1kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

패키지: -

RJH60D2DPP-E0-T2

Renesas Electronics Corporation

RJH60D2DPP - IGBT 600V 25A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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HGTH20N50E1

Harris Corporation

20A, 500V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 35 A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
• Power - Max: 100 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 33 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-218-3 Isolated Tab, TO-218AC
• Supplier Device Package: TO-218 Isolated

패키지: -

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