페이지 47 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  47/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH44K10D-EPBF
Infineon Technologies

IGBT 1200V 70A 320W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 320W
  • Switching Energy: 2.1mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 75ns/315ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고3,088
1200V
70A
100A
2.4V @ 15V, 25A
320W
2.1mJ (on), 1.3mJ (off)
Standard
200nC
75ns/315ns
600V, 25A, 10 Ohm, 15V
130ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG7PH37K10D-EPBF
Infineon Technologies

IGBT 1200V 45A 216W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 216W
  • Switching Energy: 1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 50ns/240ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,256
1200V
45A
60A
2.4V @ 15V, 15A
216W
1mJ (on), 600µJ (off)
Standard
135nC
50ns/240ns
600V, 15A, 10 Ohm, 15V
120ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4RC20FTRL
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,400
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGK50N60BD1
IXYS

IGBT 600V 75A 300W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고4,080
600V
75A
200A
2.3V @ 15V, 50A
300W
1.5mJ (off)
Standard
110nC
50ns/200ns
480V, 50A, 2.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IRG4BC15UD-LPBF
Infineon Technologies

IGBT 600V 14A 49W TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 42A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Power - Max: 49W
  • Switching Energy: 240µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 480V, 7.8A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,200
600V
14A
42A
2.4V @ 15V, 7.8A
49W
240µJ (on), 260µJ (off)
Standard
23nC
17ns/160ns
480V, 7.8A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IXXH40N65B4H1
IXYS

IGBT 650V 120A 455W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 455W
  • Switching Energy: 1.4mJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 28ns/144ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고5,696
650V
120A
240A
2V @ 15V, 40A
455W
1.4mJ (on), 560µJ (off)
Standard
77nC
28ns/144ns
400V, 40A, 5 Ohm, 15V
120ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXGH64N60A3
IXYS

IGBT 600V 460W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
  • Power - Max: 460W
  • Switching Energy: 1.42mJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 26ns/268ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,624
600V
-
400A
1.35V @ 15V, 50A
460W
1.42mJ (on), 3.28mJ (off)
Standard
167nC
26ns/268ns
480V, 50A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot HGTG7N60A4D
Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 55µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고136,524
600V
34A
56A
2.7V @ 15V, 7A
125W
55µJ (on), 60µJ (off)
Standard
37nC
11ns/100ns
390V, 7A, 25 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRGP4062DPBF
Infineon Technologies

IGBT 600V 48A 250W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고245,724
600V
48A
72A
1.95V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
50nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC40W-LPBF
Infineon Technologies

IGBT 600V 40A 160W TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,888
600V
40A
160A
2.5V @ 15V, 20A
160W
110µJ (on), 230µJ (off)
Standard
98nC
27ns/100ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
STGWA15S120DF3
STMicroelectronics

IGBT 1200V 15A TO247-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 540µJ (on), 1.38mJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,024
1200V
30A
60A
2.05V @ 15V, 15A
259W
540µJ (on), 1.38mJ (off)
Standard
53nC
23ns/140ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGT50TS65DGC11
Rohm Semiconductor

IGBT 650V 48A 174W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: TO-247-3
재고9,132
650V
48A
75A
2.1V @ 15V, 25A
174W
-
Standard
49nC
27ns/88ns
400V, 25A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
STGF10H60DF
STMicroelectronics

IGBT 600V 20A 30W TO220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 83µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: 19.5ns/103ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 107ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고6,368
600V
20A
40A
1.95V @ 15V, 10A
30W
83µJ (on), 140µJ (off)
Standard
57nC
19.5ns/103ns
400V, 10A, 10 Ohm, 15V
107ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot STGF7NC60HD
STMicroelectronics

IGBT 600V 10A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 25W
  • Switching Energy: 95µJ (on), 115µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 18.5ns/72ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고369,192
600V
10A
50A
2.5V @ 15V, 7A
25W
95µJ (on), 115µJ (off)
Standard
35nC
18.5ns/72ns
390V, 7A, 10 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot SGS10N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 55W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고14,724
600V
16A
30A
2.8V @ 15V, 10A
55W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot IHW30N160R2
Infineon Technologies

IGBT 1600V 60A 312W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 312W
  • Switching Energy: 4.37mJ
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: -/525ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고402,624
1600V
60A
90A
2.1V @ 15V, 30A
312W
4.37mJ
Standard
94nC
-/525ns
600V, 30A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot STGW20NC60VD
STMicroelectronics

IGBT 600V 60A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 44ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고100,536
600V
60A
150A
2.5V @ 15V, 20A
200W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
44ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGM20N60
IXYS

IGBT 600V 40A TO-204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 150 W
  • Switching Energy: 2mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 20A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
패키지: -
Request a Quote
600 V
40 A
80 A
2.5V @ 15V, 20A
150 W
2mJ (on), 3.2mJ (off)
Standard
120 nC
100ns/600ns
480V, 20A, 82Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
RGW60TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 33 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 72 W
  • Switching Energy: 480µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/114ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고324
650 V
33 A
120 A
1.9V @ 15V, 30A
72 W
480µJ (on), 490µJ (off)
Standard
84 nC
37ns/114ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
FGH40T65UQDF-F155
onsemi

FS4TIGBT TO247 40A 650V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
  • Power - Max: 231 W
  • Switching Energy: 989µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 306 nC
  • Td (on/off) @ 25°C: 32ns/271ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
650 V
80 A
120 A
1.67V @ 15V, 40A
231 W
989µJ (on), 310µJ (off)
Standard
306 nC
32ns/271ns
400V, 40A, 6Ohm, 15V
89 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH60N60UFDTU-F085
onsemi

IGBT 600V 120A 298W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 298 W
  • Switching Energy: 2.47mJ (on), 810µJ (off)
  • Input Type: Standard
  • Gate Charge: 192 nC
  • Td (on/off) @ 25°C: 29ns/138ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
600 V
120 A
180 A
2.9V @ 15V, 60A
298 W
2.47mJ (on), 810µJ (off)
Standard
192 nC
29ns/138ns
400V, 60A, 5Ohm, 15V
76 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGD3440G2-F085
onsemi

IGBT 400V 26.9A TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 26.9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: -/5.3µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
재고7,470
400 V
26.9 A
-
1.2V @ 4V, 6A
166 W
-
Logic
24 nC
-/5.3µs
300V, 6.5A, 1kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
ISL9V3036S3ST_SB82029A
Fairchild Semiconductor

IGBT, 360V, 17A, 1.58V, 300MJ, D

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
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-
-
-
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APT50GT120LRG
Microchip Technology

IGBT NPT 1200V 50A TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 625 W
  • Switching Energy: -, 2.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 24ns/230ns
  • Test Condition: 800V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (L)
패키지: -
재고87
1200 V
50 A
150 A
3.7V @ 15V, 50A
625 W
-, 2.33mJ (off)
Standard
340 nC
24ns/230ns
800V, 50A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (L)
RBN40H65T1FPQ-A0-CB0
Renesas Electronics Corporation

IGBT TRENCH 650V 80A TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 185 W
  • Switching Energy: 620µJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 28 nC
  • Td (on/off) @ 25°C: 22ns/96ns
  • Test Condition: 400V, 40A, 16Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
패키지: -
Request a Quote
650 V
80 A
-
2V @ 15V, 40A
185 W
620µJ (on), 520µJ (off)
Standard
28 nC
22ns/96ns
400V, 40A, 16Ohm, 15V
55 ns
175°C (TJ)
Through Hole
TO-247-3
TO-247A
RJP3047ADPK-80-T2
Renesas Electronics Corporation

HIGH SPEED IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
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BIDW20N60T
Bourns Inc.

IGBT TRENCH FS 600V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 192 W
  • Switching Energy: 1mJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 52 nC
  • Td (on/off) @ 25°C: 19ns/48ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33.7 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고12,600
600 V
40 A
60 A
2.4V @ 15V, 20A
192 W
1mJ (on), 300µJ (off)
Standard
52 nC
19ns/48ns
400V, 20A, 10Ohm, 15V
33.7 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXBT2N250-TR
IXYS

IGBT 2500V 5A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 5 A
  • Current - Collector Pulsed (Icm): 13 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
  • Power - Max: 32 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 10.6 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 2000V, 2A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 920 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
2500 V
5 A
13 A
3.5V @ 15V, 2A
32 W
-
Standard
10.6 nC
30ns/70ns
2000V, 2A, 47Ohm, 15V
920 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268