트랜지스터 - IGBT - 단일

IRG4BC30U-SPBF

Infineon Technologies

IGBT 600V 23A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 160µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 17ns/78ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC40W-S

Infineon Technologies

IGBT 600V 40A 160W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: 110µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 98nC
• Td (on/off) @ 25°C: 27ns/100ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RJH60V3BDPE-00#J3

Renesas Electronics America

IGBT 600V 35A 113W LDPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
• Power - Max: 113W
• Switching Energy: 90µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 60nC
• Td (on/off) @ 25°C: 40ns/90ns
• Test Condition: 300V, 17A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK

패키지: SC-83

RJH60V2BDPE-00#J3

Renesas Electronics America

IGBT 600V 25A 63W LDPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
• Power - Max: 63W
• Switching Energy: 30µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 33ns/65ns
• Test Condition: 300V, 12A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK

패키지: SC-83

NGD18N40CLBT4G

Littelfuse Inc.

IGBT 430V 15A 115W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
• Power - Max: 115W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGH28N60B

IXYS

IGBT 600V 40A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 15ns/175ns
• Test Condition: 480V, 28A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IXGH30N60C2D1

IXYS

IGBT 600V 70A 190W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 190µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 13ns/70ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

HGTD3N60C3S9A

Fairchild/ON Semiconductor

IGBT 600V 6A 33W TO252AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
• Power - Max: 33W
• Switching Energy: 85µJ (on), 245µJ (off)
• Input Type: Standard
• Gate Charge: 10.8nC
• Td (on/off) @ 25°C: -
• Test Condition: 480V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

STGP3NB60HD

STMicroelectronics

IGBT 600V 10A 50W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 50W
• Switching Energy: 33µJ (off)
• Input Type: Standard
• Gate Charge: 21nC
• Td (on/off) @ 25°C: 5ns/53ns
• Test Condition: 480V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IXSA20N60B2D1

IXYS

IGBT 600V 35A 190W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
• Power - Max: 190W
• Switching Energy: 380µJ (off)
• Input Type: Standard
• Gate Charge: 33nC
• Td (on/off) @ 25°C: 30ns/116ns
• Test Condition: 480V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 30ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 AA (IXSA)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYH16N250CV1HV

IXYS

IGBT 2500V 35A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 126A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
• Power - Max: 500W
• Switching Energy: 4.75mJ (on), 3.9mJ (off)
• Input Type: Standard
• Gate Charge: 97nC
• Td (on/off) @ 25°C: 14ns/260ns
• Test Condition: 1250V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 19ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

패키지: TO-247-3

IXDR30N120

IXYS

IGBT 1200V 50A 200W ISOPLUS247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 4.6mJ (on), 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 30A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

NGTB40N60FL2WG

ON Semiconductor

IGBT 600V 80A 366W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 366W
• Switching Energy: 970µJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 84ns/177ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 72ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

AOB10B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO263

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
• Power - Max: 163W
• Switching Energy: 260µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 17.4nC
• Td (on/off) @ 25°C: 10ns/72ns
• Test Condition: 400V, 10A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 105ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TIG074E8-TL-H

ON Semiconductor

IGBT 400V 150A 8ECH

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 5.4V @ 2.5V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: SOT-28FL/ECH8

패키지: 8-SMD, Flat Lead

IXBX50N360HV

IXYS

IGBT 3600V 125A 660W TO-247PLUS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3600V
• Current - Collector (Ic) (Max): 125A
• Current - Collector Pulsed (Icm): 420A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
• Power - Max: 660W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 46ns/205ns
• Test Condition: 960V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 1.7µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

RGT8NS65DGTL

Rohm Semiconductor

IGBT 650V 8A 65W TO-263S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
• Power - Max: 65W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 13.5nC
• Td (on/off) @ 25°C: 17ns/69ns
• Test Condition: 400V, 4A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS (TO-263S)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HGTG5N120BND

Fairchild/ON Semiconductor

IGBT 1200V 21A 167W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 21A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
• Power - Max: 167W
• Switching Energy: 450µJ (on), 390µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 22ns/160ns
• Test Condition: 960V, 5A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 65ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

STGF15M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
• Power - Max: 31W
• Switching Energy: 90µJ (on), 450µJ (off)
• Input Type: Standard
• Gate Charge: 45nC
• Td (on/off) @ 25°C: 24ns/93ns
• Test Condition: 400V, 15A, 12 Ohm, 15V
• Reverse Recovery Time (trr): 142ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

패키지: TO-220-3 Full Pack

STGP20V60F

STMicroelectronics

IGBT 600V 40A 167W TO220AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
• Power - Max: 167W
• Switching Energy: 200µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 38ns/149ns
• Test Condition: 400V, 20A, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

패키지: TO-220-3

IRG4PH40KDPBF

Infineon Technologies

IGBT 1200V 30A 160W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
• Power - Max: 160W
• Switching Energy: 1.31mJ (on), 1.12mJ (off)
• Input Type: Standard
• Gate Charge: 94nC
• Td (on/off) @ 25°C: 50ns/96ns
• Test Condition: 800V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 63ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

STGWT20H60DF

STMicroelectronics

IGBT 600V 40A 167W TO3PF

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
• Power - Max: 167W
• Switching Energy: 209µJ (on), 261µJ (off)
• Input Type: Standard
• Gate Charge: 115nC
• Td (on/off) @ 25°C: 42.5ns/177ns
• Test Condition: 400V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

IXGH36N60B3C1

IXYS

IGBT 600V 75A 250W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 390µJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 20ns/125ns
• Test Condition: 400V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IKD06N60RC2ATMA1

Infineon Technologies

IGBT TRENCH FS 600V 11.7A TO252

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 11.7 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
• Power - Max: 51.7 W
• Switching Energy: 170µJ (on), 80µJ (off)
• Input Type: Standard
• Gate Charge: 31 nC
• Td (on/off) @ 25°C: 6ns/129ns
• Test Condition: 400V, 6A, 49Ohm, 15V
• Reverse Recovery Time (trr): 98 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

패키지: -

SIGC84T120R3LEX1SA7

Infineon Technologies

IGBT 1200V 75A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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FGI3040G2

Fairchild Semiconductor

IGBT 41A, 390V, N CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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RGTV60TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 33 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 76 W
• Switching Energy: 570µJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 64 nC
• Td (on/off) @ 25°C: 33ns/105ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

패키지: -

IXYN150N60B3

IXYS

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 250 A
• Current - Collector Pulsed (Icm): 750 A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
• Power - Max: 830 W
• Switching Energy: 4.2mJ (on), 2.6mJ (off)
• Input Type: Standard
• Gate Charge: 260 nC
• Td (on/off) @ 25°C: 27ns/167ns
• Test Condition: 400V, 75A, 2Ohm, 15V
• Reverse Recovery Time (trr): 88 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: -

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