페이지 74 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  74/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC30F-STRLP
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,880
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RJH1BF7RDPQ-80#T2
Renesas Electronics America

IGBT 1100V 60A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1100V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,632
1100V
60A
-
2.35V @ 15V, 60A
250W
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FGPF90N30
Fairchild/ON Semiconductor

IGBT 300V 56.8W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 30A
  • Power - Max: 56.8W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 93nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고103,464
300V
-
220A
1.55V @ 15V, 30A
56.8W
-
Standard
93nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
FGP20N6S2
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 25µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 7.7ns/87ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고4,640
600V
28A
40A
2.7V @ 15V, 7A
125W
25µJ (on), 58µJ (off)
Standard
30nC
7.7ns/87ns
390V, 7A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
AUIRGP4062D1-E
Infineon Technologies

IGBT 600V 55A 217W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 217W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고4,688
600V
55A
72A
1.77V @ 15V, 24A
217W
532µJ (on), 311µJ (off)
Standard
77nC
19ns/90ns
400V, 24A, 10 Ohm, 15V
102ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGP6630DPBF
Infineon Technologies

IGBT 600V 47A 192W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 47A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
  • Power - Max: 192W
  • Switching Energy: 75µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 40ns/95ns
  • Test Condition: 400V, 18A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,864
600V
47A
54A
1.95V @ 15V, 18A
192W
75µJ (on), 350µJ (off)
Standard
30nC
40ns/95ns
400V, 18A, 22 Ohm, 15V
70ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGB200N60B3
IXYS

IGBT 600V 75A 1250W PLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 1250W
  • Switching Energy: 1.6mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 750nC
  • Td (on/off) @ 25°C: 44ns/310ns
  • Test Condition: 300V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264?
패키지: TO-264-3, TO-264AA
재고5,088
600V
75A
600A
1.5V @ 15V, 100A
1250W
1.6mJ (on), 2.9mJ (off)
Standard
750nC
44ns/310ns
300V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
PLUS264?
hot HGTG40N60A4
Fairchild/ON Semiconductor

IGBT 600V 75A 625W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 625W
  • Switching Energy: 400µJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 25ns/145ns
  • Test Condition: 390V, 40A, 2.2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고825,888
600V
75A
300A
2.7V @ 15V, 40A
625W
400µJ (on), 370µJ (off)
Standard
350nC
25ns/145ns
390V, 40A, 2.2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH240N30PB
IXYS

IGBT 300V 48A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,712
300V
48A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXBH6N170
IXYS

IGBT 1700V 12A 75W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
  • Power - Max: 75W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.08µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
패키지: TO-247-3
재고4,784
1700V
12A
36A
3.4V @ 15V, 6A
75W
-
Standard
17nC
-
-
1.08µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
IXGP15N120B
IXYS

IGBT 1200V 30A 150W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,744
1200V
30A
60A
3.2V @ 15V, 15A
150W
1.75mJ (off)
Standard
69nC
25ns/180ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGD10NC60HDT4
STMicroelectronics

IGBT 600V 20A 62W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 62W
  • Switching Energy: 31.8µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.2nC
  • Td (on/off) @ 25°C: 14.2ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,720
600V
20A
30A
2.5V @ 15V, 5A
62W
31.8µJ (on), 95µJ (off)
Standard
19.2nC
14.2ns/72ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4IBC20FDPBF
Infineon Technologies

IGBT 600V 14.3A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.3A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고6,252
600V
14.3A
64A
2V @ 15V, 9A
34W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
STGW60V60F
STMicroelectronics

IGBT 600V 80A 375W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 750µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 334nC
  • Td (on/off) @ 25°C: 60ns/208ns
  • Test Condition: 400V, 60A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고9,072
600V
80A
240A
2.3V @ 15V, 60A
375W
750µJ (on), 550µJ (off)
Standard
334nC
60ns/208ns
400V, 60A, 4.7 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGA50T65SHD
Fairchild/ON Semiconductor

IGBT 650V 100A 319W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 319W
  • Switching Energy: 1.28mJ (on), 384µJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 22.4ns/73.6ns
  • Test Condition: 400V, 50A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34.6ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고9,456
650V
100A
150A
2.1V @ 15V, 50A
319W
1.28mJ (on), 384µJ (off)
Standard
87nC
22.4ns/73.6ns
400V, 50A, 6 Ohm, 15V
34.6ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGH40T65SPD_F085
Fairchild/ON Semiconductor

AUTOMOTIVE 650V FS GEN3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16MJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,252
650V
80A
120A
2.4V @ 15V, 40A
267W
1.16MJ (on), 270µJ (off)
Standard
36nC
18ns/35ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGWT20V60F
STMicroelectronics

IGBT 600V 40A 167W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고16,788
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot STGB19NC60KT4
STMicroelectronics

IGBT 600V 35A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 165µJ (on), 255µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 30ns/105ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고13,080
600V
35A
75A
2.75V @ 15V, 12A
125W
165µJ (on), 255µJ (off)
Standard
55nC
30ns/105ns
480V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGW30H60DFB
STMicroelectronics

IGBT 600V 60A 260W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 383µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고16,188
600V
60A
120A
2V @ 15V, 30A
260W
383µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXXH80N65B4H1
IXYS

IGBT 650V 160A 625W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 430A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 625W
  • Switching Energy: 3.77mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 38ns/120ns
  • Test Condition: 400V, 80A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고19,872
650V
160A
430A
2V @ 15V, 80A
625W
3.77mJ (on), 1.2mJ (off)
Standard
120nC
38ns/120ns
400V, 80A, 3 Ohm, 15V
150ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
SIGC07T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
21ns/110ns
300V, 6A, 54Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGS50NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 50A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 206 W
  • Switching Energy: 810µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 28ns/91ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
50 A
75 A
2.1V @ 15V, 25A
206 W
810µJ (on), 650µJ (off)
Standard
31 nC
28ns/91ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
AIKB30N65DH5ATMA1
Infineon Technologies

IGBT NPT 650V 30A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
재고3,000
650 V
30 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
AOK60B65H1
Alpha & Omega Semiconductor Inc.

IGBT 650V 60A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
  • Power - Max: 500 W
  • Switching Energy: 2.42mJ (on), 1.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 39ns/153ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 288 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
650 V
120 A
180 A
2.35V @ 15V, 60A
500 W
2.42mJ (on), 1.17mJ (off)
Standard
90 nC
39ns/153ns
400V, 60A, 5Ohm, 15V
288 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
ITF48IF1200HR
IXYS

IGBT TRENCH 1200V 72A ISO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 72 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 390 W
  • Switching Energy: 3mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 175 nC
  • Td (on/off) @ 25°C: 26ns/350ns
  • Test Condition: 600V, 40A, 12Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
패키지: -
Request a Quote
1200 V
72 A
-
2.4V @ 15V, 40A
390 W
3mJ (on), 2.4mJ (off)
Standard
175 nC
26ns/350ns
600V, 40A, 12Ohm, 15V
-
-
Through Hole
TO-247-3
ISO247
RJH30E3DPK-M2-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJP30Y2ADPP-MB-T2F
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STGWA100H65DFB2
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 1

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 145 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 441 W
  • Switching Energy: 2.2mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 288 nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 400V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): 123 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
650 V
145 A
300 A
2V @ 15V, 100A
441 W
2.2mJ (on), 1.4mJ (off)
Standard
288 nC
30ns/130ns
400V, 100A, 2.2Ohm, 15V
123 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads