페이지 75 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  75/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4610DPBF
Infineon Technologies

IGBT 600V 16A 77W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,408
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AUIRGR4045D
Infineon Technologies

IGBT 600V 12A 77W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,224
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
19.5nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
SKP02N60XKSA1
Infineon Technologies

IGBT 600V 6A 30W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,552
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4PC40U
Infineon Technologies

IGBT 600V 40A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 34ns/110ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고17,328
600V
40A
160A
2.1V @ 15V, 20A
160W
320µJ (on), 350µJ (off)
Standard
100nC
34ns/110ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJH1CV7DPQ-E0#T2
Renesas Electronics America

IGBT 1200V 70A 320W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
  • Power - Max: 320W
  • Switching Energy: 3.2mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 166nC
  • Td (on/off) @ 25°C: 53ns/185ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,552
1200V
70A
-
2.3V @ 15V, 35A
320W
3.2mJ (on), 2.5mJ (off)
Standard
166nC
53ns/185ns
600V, 35A, 5 Ohm, 15V
200ns
150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60D2DPE-00#J3
Renesas Electronics America

IGBT 600V 25A 63W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 100µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 32ns/85ns
  • Test Condition: 300V, 12A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
패키지: SC-83
재고2,304
600V
25A
-
2.2V @ 15V, 12A
63W
100µJ (on), 160µJ (off)
Standard
19nC
32ns/85ns
300V, 12A, 5 Ohm, 15V
100ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
hot IXGR50N60BD1
IXYS

IGBT 600V 75A 250W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고15,576
600V
75A
200A
2.5V @ 15V, 50A
250W
3mJ (off)
Standard
110nC
50ns/110ns
480V, 50A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
SGW5N60RUFDTM
Fairchild/ON Semiconductor

IGBT 600V 8A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 88µJ (on), 107µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 13ns/34ns
  • Test Condition: 300V, 5A, 40 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,216
600V
8A
15A
2.8V @ 15V, 5A
60W
88µJ (on), 107µJ (off)
Standard
16nC
13ns/34ns
300V, 5A, 40 Ohm, 15V
55ns
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AUIRGP4066D1
Infineon Technologies

IGBT 600V 140A 454W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 4.24mJ (on), 2.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,928
600V
140A
225A
2.1V @ 15V, 75A
454W
4.24mJ (on), 2.17mJ (off)
Standard
225nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC30W-STRLP
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,104
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGH48N60B3C1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 450µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,584
600V
75A
280A
1.8V @ 15V, 32A
300W
450µJ (on), 660µJ (off)
Standard
115nC
22ns/130ns
480V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT13GP120BDQ1G
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고4,688
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGH50N90B2D1
IXYS

IGBT 900V 75A 400W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 400W
  • Switching Energy: 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/350ns
  • Test Condition: 720V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고6,928
900V
75A
200A
2.7V @ 15V, 50A
400W
4.7mJ (off)
Standard
135nC
20ns/350ns
720V, 50A, 5 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXYH50N120C3
IXYS

IGBT 1200V 100A 750W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
  • Power - Max: 750W
  • Switching Energy: 3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 28ns/133ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고6,168
1200V
100A
240A
3.5V @ 15V, 50A
750W
3mJ (on), 1mJ (off)
Standard
142nC
28ns/133ns
600V, 50A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
APT25GR120SD15
Microsemi Corporation

IGBT 1200V 75A 521W D3PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 521W
  • Switching Energy: 742µJ (on), 427µJ (off)
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 600V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3Pak
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,320
1200V
75A
100A
3.2V @ 15V, 25A
521W
742µJ (on), 427µJ (off)
Standard
203nC
16ns/122ns
600V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
D3Pak
STGW60H65DFB
STMicroelectronics

IGBT 650V 80A 375W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 1.09mJ (on), 626µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: 51ns/160ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,024
650V
80A
240A
2V @ 15V, 60A
375W
1.09mJ (on), 626µJ (off)
Standard
306nC
51ns/160ns
400V, 60A, 5 Ohm, 15V
60ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot TIG065E8-TL-H
ON Semiconductor

IGBT 400V 150A ECH8

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
패키지: 8-SMD, Flat Lead
재고3,114,096
400V
-
150A
7V @ 2.5V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot STGF14NC60KD
STMicroelectronics

IGBT 600V 11A 28W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 28W
  • Switching Energy: 82µJ (on), 155µJ (off)
  • Input Type: Standard
  • Gate Charge: 34.4nC
  • Td (on/off) @ 25°C: 22.5ns/116ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고91,632
600V
11A
50A
2.5V @ 15V, 7A
28W
82µJ (on), 155µJ (off)
Standard
34.4nC
22.5ns/116ns
390V, 7A, 10 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
SIGC25T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
LGB8207ATH
IXYS

D2PAK, IGBT3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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IGC70T120T8RQX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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1200 V
75 A
225 A
2.42V @ 15V, 75A
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-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYH120N65B3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 760 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Power - Max: 1360 W
  • Switching Energy: 1.34mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 30ns/168ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 28 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
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650 V
340 A
760 A
1.9V @ 15V, 100A
1360 W
1.34mJ (on), 1.5mJ (off)
Standard
250 nC
30ns/168ns
400V, 50A, 2Ohm, 15V
28 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IGC50T120T8RLX7SA2
Infineon Technologies

IGBT 1200V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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1200 V
-
150 A
2.07V @ 15V, 50A
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-
Standard
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IXYX110N120B4
IXYS

IGBT 1200V 110A GEN4 XPT PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 800 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 3.6mJ (on), 3.85mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 45ns/390ns
  • Test Condition: 600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
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1200 V
340 A
800 A
2.1V @ 15V, 110A
1360 W
3.6mJ (on), 3.85mJ (off)
Standard
340 nC
45ns/390ns
600V, 50A, 2Ohm, 15V
50 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
MIP10N65AT0Y-BP
Micro Commercial Co

IGBT TRENCH FS 650V 20A TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
  • Power - Max: 100 W
  • Switching Energy: 360µJ (on), 170µJ (off)
  • Input Type: Standard
  • Gate Charge: 59 nC
  • Td (on/off) @ 25°C: 10ns/68ns
  • Test Condition: 300V, 10A, 51Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
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650 V
20 A
40 A
1.7V @ 15V, 10A
100 W
360µJ (on), 170µJ (off)
Standard
59 nC
10ns/68ns
300V, 10A, 51Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
RGWS00TS65GC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 88 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 245 W
  • Switching Energy: 980µJ (on), 910µJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 46ns/145ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
88 A
150 A
2V @ 15V, 50A
245 W
980µJ (on), 910µJ (off)
Standard
108 nC
46ns/145ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
AUIRGF66524D0-IR
International Rectifier

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 72 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 214 W
  • Switching Energy: 915µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: 30ns/75ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 176 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: -
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600 V
60 A
72 A
1.9V @ 15V, 24A
214 W
915µJ (on), 280µJ (off)
Standard
80 nC
30ns/75ns
400V, 24A, 10Ohm, 15V
176 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
HGTH20N50C1
Harris Corporation

20A, 500V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 35 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
  • Power - Max: 100 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 33 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3 Isolated Tab, TO-218AC
  • Supplier Device Package: TO-218 Isolated
패키지: -
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500 V
20 A
35 A
3.2V @ 20V, 35A
100 W
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Standard
33 nC
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-55°C ~ 150°C (TJ)
Through Hole
TO-218-3 Isolated Tab, TO-218AC
TO-218 Isolated