페이지 77 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRG7CH23K10EF

Infineon Technologies

IGBT 1200V DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,232

-

IHY30N160R2XKSA1

Infineon Technologies

IGBT 1600V 30A 312W TO247HC-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 312W
Switching Energy: 2.53mJ
Input Type: Standard
Gate Charge: 94nC
Td (on/off) @ 25°C: -/525ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3

패키지: TO-247-3 Variant

재고2,048

1600V

60A

90A

2.1V @ 15V, 30A

312W

2.53mJ

Standard

94nC

-/525ns

600V, 30A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3 Variant

PG-TO247HC-3

IRG6I330U-168P

Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
Power - Max: 43W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,376

330V

28A

-

1.55V @ 15V, 28A

43W

-

Standard

-

Through Hole

TO-220-3

TO-220AB

IRG4IBC10UD

Infineon Technologies

IGBT 600V 6.8A 25W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 6.8A
Current - Collector Pulsed (Icm): 27A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 25W
Switching Energy: 140µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 40ns/87ns
Test Condition: 480V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고4,336

600V

6.8A

27A

2.6V @ 15V, 5A

25W

140µJ (on), 120µJ (off)

Standard

15nC

40ns/87ns

480V, 5A, 100 Ohm, 15V

28ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

IRG4BC20S

Infineon Technologies

IGBT 600V 19A 60W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 19A
Current - Collector Pulsed (Icm): 38A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Power - Max: 60W
Switching Energy: 120µJ (on), 2.05mJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 27ns/540ns
Test Condition: 480V, 10A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,840

600V

19A

38A

1.6V @ 15V, 10A

60W

120µJ (on), 2.05mJ (off)

Standard

27nC

27ns/540ns

480V, 10A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

FGPF45N45TTU

Fairchild/ON Semiconductor

IGBT 450V 51.6W TO220F

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 450V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
Power - Max: 51.6W
Switching Energy: -
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고6,384

450V

-

180A

1.5V @ 15V, 20A

51.6W

-

Standard

100nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

IXGP7N60BD1

IXYS

IGBT 600V 14A 80W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Power - Max: 80W
Switching Energy: 300µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 10ns/100ns
Test Condition: 480V, 7A, 18 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고2,128

600V

14A

56A

2V @ 15V, 7A

80W

300µJ (off)

Standard

25nC

10ns/100ns

480V, 7A, 18 Ohm, 15V

35ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGH30N60C2

IXYS

IGBT 600V 70A 190W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Power - Max: 190W
Switching Energy: 290µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 13ns/70ns
Test Condition: 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고7,176

600V

70A

150A

2.7V @ 15V, 24A

190W

290µJ (off)

Standard

70nC

13ns/70ns

400V, 24A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Power - Max: 660W
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: 60ns/200ns
Test Condition: 480V, 100A, 2.4 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고4,688

600V

200A

300A

2.1V @ 15V, 120A

660W

2.4mJ (on), 5.5mJ (off)

Standard

350nC

60ns/200ns

480V, 100A, 2.4 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

AUIRGF76524D0

Infineon Technologies

DIODE IGBT 680V 24A TO-247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,864

-

AIHD04N60RFATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Power - Max: 75W
Switching Energy: 60µJ (on), 50µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 12ns/116ns
Test Condition: 400V, 4A, 43 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,192

600V

8A

12A

2.5V @ 15V, 4A

75W

60µJ (on), 50µJ (off)

Standard

27nC

12ns/116ns

400V, 4A, 43 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

IXGX55N120A3D1

IXYS

IGBT PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고6,048

-

Through Hole

TO-247-3

PLUS247?-3

IXYH12N250C

IXYS

IGBT 2500V 28A TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Power - Max: 310W
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 56nC
Td (on/off) @ 25°C: 12ns/167ns
Test Condition: 1250V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr): 16ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고2,288

2500V

28A

80A

4.5V @ 15V, 12A

310W

3.56mJ (on), 1.7mJ (off)

Standard

56nC

12ns/167ns

1250V, 12A, 10 Ohm, 15V

16ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

IXGP20N100

IXYS

IGBT 1000V 40A 150W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 150W
Switching Energy: 3.5mJ (off)
Input Type: Standard
Gate Charge: 73nC
Td (on/off) @ 25°C: 30ns/350ns
Test Condition: 800V, 20A, 47 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고4,288

1000V

40A

80A

3V @ 15V, 20A

150W

3.5mJ (off)

Standard

73nC

30ns/350ns

800V, 20A, 47 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGP20N120B

IXYS

IGBT 1200V 40A 190W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Power - Max: 190W
Switching Energy: 2.1mJ (off)
Input Type: Standard
Gate Charge: 72nC
Td (on/off) @ 25°C: 25ns/150ns
Test Condition: 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,712

1200V

40A

100A

3.4V @ 15V, 20A

190W

2.1mJ (off)

Standard

72nC

25ns/150ns

960V, 20A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

NGTB30N60IHLWG

ON Semiconductor

IGBT 600V 30A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 250W
Switching Energy: 280µJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 400ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고7,616

600V

60A

150A

2.3V @ 15V, 30A

250W

280µJ (off)

Standard

130nC

70ns/140ns

400V, 30A, 10 Ohm, 15V

400ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

NGD8209NT4G

Littelfuse Inc.

IGBT 410V 12A 125W DPAK-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 445V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4.5V, 10A
Power - Max: 94W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고180,000

445V

12A

30A

2.3V @ 4.5V, 10A

94W

-

Logic

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

FGH60T65SHD_F155

Fairchild/ON Semiconductor

IGBT 650V 120A 349W TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Power - Max: 349W
Switching Energy: 1.69mJ (on), 630µJ (off)
Input Type: Standard
Gate Charge: 102nC
Td (on/off) @ 25°C: 26ns/87ns
Test Condition: 400V, 60A, 6 Ohm, 15V
Reverse Recovery Time (trr): 34.6ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: TO-247-3

재고3,552

650V

120A

180A

2.1V @ 15V, 60A

349W

1.69mJ (on), 630µJ (off)

Standard

102nC

26ns/87ns

400V, 60A, 6 Ohm, 15V

34.6ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

HGTP3N60A4

Fairchild/ON Semiconductor

IGBT 600V 17A 70W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 17A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Power - Max: 70W
Switching Energy: 37µJ (on), 25µJ (off)
Input Type: Standard
Gate Charge: 21nC
Td (on/off) @ 25°C: 6ns/73ns
Test Condition: 390V, 3A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고77,940

600V

17A

40A

2.7V @ 15V, 3A

70W

37µJ (on), 25µJ (off)

Standard

21nC

6ns/73ns

390V, 3A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

STGW50NC60W

STMicroelectronics

IGBT 600V 100A 285W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 285W
Switching Energy: 365µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 195nC
Td (on/off) @ 25°C: 52ns/240ns
Test Condition: 390V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: TO-247-3

재고403,560

600V

100A

-

2.6V @ 15V, 40A

285W

365µJ (on), 560µJ (off)

Standard

195nC

52ns/240ns

390V, 40A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

AUIRG4PC40S-E

Infineon Technologies

IGBT 600V 60A 160W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Power - Max: 160W
Switching Energy: 450µJ (on), 6.5mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 22ns/650ns
Test Condition: 480V, 31A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고8,268

600V

60A

120A

1.5V @ 15V, 31A

160W

450µJ (on), 6.5mJ (off)

Standard

150nC

22ns/650ns

480V, 31A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD

RGT8BM65DTL

Rohm Semiconductor

IGBT 650V 8A 62W TO-252

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Power - Max: 62W
Switching Energy: -
Input Type: Standard
Gate Charge: 13.5nC
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,248

650V

8A

12A

2.1V @ 15V, 4A

62W

-

Standard

13.5nC

17ns/69ns

400V, 4A, 50 Ohm, 15V

40ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

IKW75N65EL5XKSA1

Infineon Technologies

IGBT 650V 75A FAST DIODE TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Power - Max: 536W
Switching Energy: 1.61mJ (on), 3.2mJ (off)
Input Type: Standard
Gate Charge: 436nC
Td (on/off) @ 25°C: 40ns/275ns
Test Condition: 400V, 75A, 4 Ohm, 15V
Reverse Recovery Time (trr): 114ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고16,314

650V

80A

300A

1.35V @ 15V, 75A

536W

1.61mJ (on), 3.2mJ (off)

Standard

436nC

40ns/275ns

400V, 75A, 4 Ohm, 15V

114ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

CT60AM-18F-G02

Renesas Electronics Corporation

N-CHANNEL IGBT, 900V, 60A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SIGC19T60SEX1SA1

Infineon Technologies

IGBT 3 CHIP 600V

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

40 A

120 A

1.97V @ 15V, 40A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

STGWA25IH135DF2

STMicroelectronics

IGBT TRENCH FS 1.35KV 50A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Power - Max: 340 W
Switching Energy: 1mJ (off)
Input Type: Standard
Gate Charge: 166 nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: -

재고273

1350 V

50 A

100 A

2.2V @ 15V, 20A

340 W

1mJ (off)

Standard

166 nC

-

600V, 20A, 10Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

MIW15N120FA-BP

Micro Commercial Co

IGBT 1200V 15A,TO-247AB

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Power - Max: 200 W
Switching Energy: 2.2mJ (on), 1.3mJ (off)
Input Type: Standard
Gate Charge: 140 nC
Td (on/off) @ 25°C: 45ns/128ns
Test Condition: 600V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AB

패키지: -

재고5,172

1200 V

30 A

60 A

2.35V @ 15V, 15A

200 W

2.2mJ (on), 1.3mJ (off)

Standard

140 nC

45ns/128ns

600V, 15A, 33Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AB

IXYT30N450HV

IXYS

IGBT 4500V 60A TO268HV

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Power - Max: 430 W
Switching Energy: -
Input Type: Standard
Gate Charge: 88 nC
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268HV (IXYT)

패키지: -

재고255

4500 V

60 A

200 A

3.9V @ 15V, 30A

430 W

-

Standard

88 nC

38ns/168ns

960V, 30A, 10Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

TO-268HV (IXYT)

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7CH23K10EF	Infineon Technologies	IGBT 1200V DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IHY30N160R2XKSA1	Infineon Technologies	IGBT 1600V 30A 312W TO247HC-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 312W Switching Energy: 2.53mJ Input Type: Standard Gate Charge: 94nC Td (on/off) @ 25°C: -/525ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	패키지: TO-247-3 Variant	재고2,048	1600V	60A	90A	2.1V @ 15V, 30A	312W	2.53mJ	Standard	94nC	-/525ns	600V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PG-TO247HC-3
IRG6I330U-168P	Infineon Technologies	IGBT 330V 28A 43W TO220ABFP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,376	330V	28A	-	1.55V @ 15V, 28A	43W	-	Standard	-	-	-	-	-	Through Hole	TO-220-3	TO-220AB
IRG4IBC10UD	Infineon Technologies	IGBT 600V 6.8A 25W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6.8A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 25W Switching Energy: 140µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 40ns/87ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고4,336	600V	6.8A	27A	2.6V @ 15V, 5A	25W	140µJ (on), 120µJ (off)	Standard	15nC	40ns/87ns	480V, 5A, 100 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IRG4BC20S	Infineon Technologies	IGBT 600V 19A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 120µJ (on), 2.05mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 27ns/540ns Test Condition: 480V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,840	600V	19A	38A	1.6V @ 15V, 10A	60W	120µJ (on), 2.05mJ (off)	Standard	27nC	27ns/540ns	480V, 10A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
FGPF45N45TTU	Fairchild/ON Semiconductor	IGBT 450V 51.6W TO220F IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 450V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 51.6W Switching Energy: - Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고6,384	450V	-	180A	1.5V @ 15V, 20A	51.6W	-	Standard	100nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
IXGP7N60BD1	IXYS	IGBT 600V 14A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 80W Switching Energy: 300µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 10ns/100ns Test Condition: 480V, 7A, 18 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고2,128	600V	14A	56A	2V @ 15V, 7A	80W	300µJ (off)	Standard	25nC	10ns/100ns	480V, 7A, 18 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH30N60C2	IXYS	IGBT 600V 70A 190W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 190W Switching Energy: 290µJ (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 13ns/70ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고7,176	600V	70A	150A	2.7V @ 15V, 24A	190W	290µJ (off)	Standard	70nC	13ns/70ns	400V, 24A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGX120N60B	IXYS	IGBT 600V 200A 660W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A Power - Max: 660W Switching Energy: 2.4mJ (on), 5.5mJ (off) Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: 60ns/200ns Test Condition: 480V, 100A, 2.4 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고4,688	600V	200A	300A	2.1V @ 15V, 120A	660W	2.4mJ (on), 5.5mJ (off)	Standard	350nC	60ns/200ns	480V, 100A, 2.4 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
AUIRGF76524D0	Infineon Technologies	DIODE IGBT 680V 24A TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIHD04N60RFATMA1	Infineon Technologies	IC DISCRETE 600V TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 75W Switching Energy: 60µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 12ns/116ns Test Condition: 400V, 4A, 43 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,192	600V	8A	12A	2.5V @ 15V, 4A	75W	60µJ (on), 50µJ (off)	Standard	27nC	12ns/116ns	400V, 4A, 43 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
IXGX55N120A3D1	IXYS	IGBT PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고6,048	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	PLUS247?-3
IXYH12N250C	IXYS	IGBT 2500V 28A TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Power - Max: 310W Switching Energy: 3.56mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 12ns/167ns Test Condition: 1250V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 16ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고2,288	2500V	28A	80A	4.5V @ 15V, 12A	310W	3.56mJ (on), 1.7mJ (off)	Standard	56nC	12ns/167ns	1250V, 12A, 10 Ohm, 15V	16ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IXGP20N100	IXYS	IGBT 1000V 40A 150W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 150W Switching Energy: 3.5mJ (off) Input Type: Standard Gate Charge: 73nC Td (on/off) @ 25°C: 30ns/350ns Test Condition: 800V, 20A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고4,288	1000V	40A	80A	3V @ 15V, 20A	150W	3.5mJ (off)	Standard	73nC	30ns/350ns	800V, 20A, 47 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGP20N120B	IXYS	IGBT 1200V 40A 190W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Power - Max: 190W Switching Energy: 2.1mJ (off) Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,712	1200V	40A	100A	3.4V @ 15V, 20A	190W	2.1mJ (off)	Standard	72nC	25ns/150ns	960V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
NGTB30N60IHLWG	ON Semiconductor	IGBT 600V 30A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 250W Switching Energy: 280µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고7,616	600V	60A	150A	2.3V @ 15V, 30A	250W	280µJ (off)	Standard	130nC	70ns/140ns	400V, 30A, 10 Ohm, 15V	400ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGD8209NT4G	Littelfuse Inc.	IGBT 410V 12A 125W DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 445V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.3V @ 4.5V, 10A Power - Max: 94W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고180,000	445V	12A	30A	2.3V @ 4.5V, 10A	94W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
FGH60T65SHD_F155	Fairchild/ON Semiconductor	IGBT 650V 120A 349W TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Power - Max: 349W Switching Energy: 1.69mJ (on), 630µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 26ns/87ns Test Condition: 400V, 60A, 6 Ohm, 15V Reverse Recovery Time (trr): 34.6ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: TO-247-3	재고3,552	650V	120A	180A	2.1V @ 15V, 60A	349W	1.69mJ (on), 630µJ (off)	Standard	102nC	26ns/87ns	400V, 60A, 6 Ohm, 15V	34.6ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
HGTP3N60A4	Fairchild/ON Semiconductor	IGBT 600V 17A 70W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Power - Max: 70W Switching Energy: 37µJ (on), 25µJ (off) Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고77,940	600V	17A	40A	2.7V @ 15V, 3A	70W	37µJ (on), 25µJ (off)	Standard	21nC	6ns/73ns	390V, 3A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGW50NC60W	STMicroelectronics	IGBT 600V 100A 285W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 285W Switching Energy: 365µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 195nC Td (on/off) @ 25°C: 52ns/240ns Test Condition: 390V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: TO-247-3	재고403,560	600V	100A	-	2.6V @ 15V, 40A	285W	365µJ (on), 560µJ (off)	Standard	195nC	52ns/240ns	390V, 40A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
AUIRG4PC40S-E	Infineon Technologies	IGBT 600V 60A 160W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A Power - Max: 160W Switching Energy: 450µJ (on), 6.5mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 22ns/650ns Test Condition: 480V, 31A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고8,268	600V	60A	120A	1.5V @ 15V, 31A	160W	450µJ (on), 6.5mJ (off)	Standard	150nC	22ns/650ns	480V, 31A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
RGT8BM65DTL	Rohm Semiconductor	IGBT 650V 8A 62W TO-252 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Power - Max: 62W Switching Energy: - Input Type: Standard Gate Charge: 13.5nC Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,248	650V	8A	12A	2.1V @ 15V, 4A	62W	-	Standard	13.5nC	17ns/69ns	400V, 4A, 50 Ohm, 15V	40ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252
IKW75N65EL5XKSA1	Infineon Technologies	IGBT 650V 75A FAST DIODE TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Power - Max: 536W Switching Energy: 1.61mJ (on), 3.2mJ (off) Input Type: Standard Gate Charge: 436nC Td (on/off) @ 25°C: 40ns/275ns Test Condition: 400V, 75A, 4 Ohm, 15V Reverse Recovery Time (trr): 114ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고16,314	650V	80A	300A	1.35V @ 15V, 75A	536W	1.61mJ (on), 3.2mJ (off)	Standard	436nC	40ns/275ns	400V, 75A, 4 Ohm, 15V	114ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
CT60AM-18F-G02	Renesas Electronics Corporation	N-CHANNEL IGBT, 900V, 60A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC19T60SEX1SA1	Infineon Technologies	IGBT 3 CHIP 600V IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	40 A	120 A	1.97V @ 15V, 40A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
STGWA25IH135DF2	STMicroelectronics	IGBT TRENCH FS 1.35KV 50A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 340 W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 166 nC Td (on/off) @ 25°C: - Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: -	재고273	1350 V	50 A	100 A	2.2V @ 15V, 20A	340 W	1mJ (off)	Standard	166 nC	-	600V, 20A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
MIW15N120FA-BP	Micro Commercial Co	IGBT 1200V 15A,TO-247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A Power - Max: 200 W Switching Energy: 2.2mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 140 nC Td (on/off) @ 25°C: 45ns/128ns Test Condition: 600V, 15A, 33Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	패키지: -	재고5,172	1200 V	30 A	60 A	2.35V @ 15V, 15A	200 W	2.2mJ (on), 1.3mJ (off)	Standard	140 nC	45ns/128ns	600V, 15A, 33Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AB
IXYT30N450HV	IXYS	IGBT 4500V 60A TO268HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Power - Max: 430 W Switching Energy: - Input Type: Standard Gate Charge: 88 nC Td (on/off) @ 25°C: 38ns/168ns Test Condition: 960V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268HV (IXYT)	패키지: -	재고255	4500 V	60 A	200 A	3.9V @ 15V, 30A	430 W	-	Standard	88 nC	38ns/168ns	960V, 30A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	TO-268HV (IXYT)