페이지 92 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  92/158
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부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH75K10EF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,320
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7CH73UED-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,920
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGP4640-EPBF
Infineon Technologies

IGBT 600V 65A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 100µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고7,488
600V
65A
72A
1.9V @ 15V, 24A
250W
100µJ (on), 600µJ (off)
Standard
75nC
40ns/105ns
400V, 24A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4RC10KTRL
Infineon Technologies

IGBT 600V 9A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 160µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 11ns/51ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,096
600V
9A
18A
2.62V @ 15V, 5A
38W
160µJ (on), 100µJ (off)
Standard
19nC
11ns/51ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC30U
Infineon Technologies

IGBT 600V 23A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고13,320
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH50N60C4
IXYS

IGBT 600V 90A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 840µJ (off)
  • Input Type: Standard
  • Gate Charge: 113nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 400V, 36A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,224
600V
90A
220A
2.3V @ 15V, 36A
300W
950µJ (on), 840µJ (off)
Standard
113nC
40ns/270ns
400V, 36A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXSK50N60AU1
IXYS

IGBT 600V 75A 300W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 70ns/200ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
패키지: TO-264-3, TO-264AA
재고4,640
600V
75A
200A
2.7V @ 15V, 50A
300W
6mJ (off)
Standard
190nC
70ns/200ns
480V, 50A, 2.7 Ohm, 15V
50ns
-
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
hot STGW40N120KD
STMicroelectronics

IGBT 1200V 80A 240W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A
  • Power - Max: 240W
  • Switching Energy: 3.7mJ (on), 5.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 48ns/338ns
  • Test Condition: 960V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 84ns
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고390,000
1200V
80A
120A
3.85V @ 15V, 30A
240W
3.7mJ (on), 5.7mJ (off)
Standard
126nC
48ns/338ns
960V, 30A, 10 Ohm, 15V
84ns
-55°C ~ 125°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STGW30N90D
STMicroelectronics

IGBT 900V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 135A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 1.66mJ (on), 4.44mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 29ns/275ns
  • Test Condition: 900V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 152ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고15,540
900V
60A
135A
2.75V @ 15V, 20A
220W
1.66mJ (on), 4.44mJ (off)
Standard
110nC
29ns/275ns
900V, 20A, 10 Ohm, 15V
152ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGT30N60B2D1
IXYS

IGBT 600V 70A 190W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/110ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,640
600V
70A
150A
1.8V @ 15V, 24A
190W
320µJ (off)
Standard
66nC
13ns/110ns
400V, 24A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot FGH20N6S2
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 25µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 7.7ns/87ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고103,464
600V
28A
40A
2.7V @ 15V, 7A
125W
25µJ (on), 58µJ (off)
Standard
30nC
7.7ns/87ns
390V, 7A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRGR4045DTRPBF
Infineon Technologies

IGBT 600V 12A 77W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,208
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
19.5nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC20WPBF
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,160
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
APT50GT120LRDQ2G
Microsemi Corporation

IGBT 1200V 106A 694W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 106A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 694W
  • Switching Energy: 2585µJ (on), 1910µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 23ns/215ns
  • Test Condition: 800V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
패키지: TO-264-3, TO-264AA
재고7,504
1200V
106A
150A
3.7V @ 15V, 50A
694W
2585µJ (on), 1910µJ (off)
Standard
240nC
23ns/215ns
800V, 50A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
IXGT25N160
IXYS

IGBT 1600V 75A 300W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,032
1600V
75A
200A
4.7V @ 20V, 100A
300W
-
Standard
84nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
NGTD14T65F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,176
650V
-
120A
2V @ 15V, 35A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP08N65F5XKSA1
Infineon Technologies

IGBT 650V 18A 70W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 70W
  • Switching Energy: 70µJ (on), 20µJ (off)
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 10ns/116ns
  • Test Condition: 400V, 4A, 48 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고8,460
650V
18A
24A
2.1V @ 15V, 8A
70W
70µJ (on), 20µJ (off)
Standard
22nC
10ns/116ns
400V, 4A, 48 Ohm, 15V
41ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXBF50N360
IXYS

IGBT 3600V 70A 290W I4-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 420A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
  • Power - Max: 290W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 46ns/205ns
  • Test Condition: 960V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
패키지: i4-Pac?-5 (3 leads)
재고4,864
3600V
70A
420A
2.9V @ 15V, 50A
290W
-
Standard
210nC
46ns/205ns
960V, 50A, 5 Ohm, 15V
1.7µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IKW30N65ES5XKSA1
Infineon Technologies

IGBT 650V 30A FAST DIODE TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 62A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 560µJ (on), 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 17ns/124ns
  • Test Condition: 400V, 30A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고9,420
650V
62A
120A
1.7V @ 15V, 30A
188W
560µJ (on), 320µJ (off)
Standard
70nC
17ns/124ns
400V, 30A, 13 Ohm, 15V
75ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGP4660DPBF
Infineon Technologies

IGBT 600V 100A 330W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,368
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB25N120FL3WG
ON Semiconductor

IGBT 1200V 100A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 349W
  • Switching Energy: 1mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 136nC
  • Td (on/off) @ 25°C: 15ns/109ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 114ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고11,484
1200V
100A
100A
2.4V @ 15V, 25A
349W
1mJ (on), 700µJ (off)
Standard
136nC
15ns/109ns
600V, 25A, 10 Ohm, 15V
114ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot NGTB15N120FLWG
ON Semiconductor

IGBT 1200V 15A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 156W
  • Switching Energy: 1.17mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 72ns/168ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 166ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,772
1200V
30A
120A
2.2V @ 15V, 15A
156W
1.17mJ (on), 550µJ (off)
Standard
150nC
72ns/168ns
600V, 15A, 10 Ohm, 15V
166ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N60FWG
ON Semiconductor

IGBT 600V 100A 223W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 117ns/285ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,600
600V
100A
200A
1.7V @ 15V, 50A
223W
1.1mJ (on), 1.2mJ (off)
Standard
310nC
117ns/285ns
400V, 50A, 10 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IGB10N60TATMA1
Infineon Technologies

IGBT 600V 20A 110W TO263-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고25,548
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
AOTF5B65M2
Alpha & Omega Semiconductor Inc.

IGBT 5A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 15 A
  • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
  • Power - Max: 25 W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 8.5ns/106ns
  • Test Condition: 400V, 5A, 60Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: -
Request a Quote
650 V
10 A
15 A
1.98V @ 15V, 5A
25 W
80µJ (on), 70µJ (off)
Standard
14 nC
8.5ns/106ns
400V, 5A, 60Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
SIGC42T60UNX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKB40N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 1.1mJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 20ns/157ns
  • Test Condition: 400V, 40A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 78 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: -
재고4,086
650 V
74 A
160 A
2.1V @ 15V, 40A
250 W
1.1mJ (on), 400µJ (off)
Standard
95 nC
20ns/157ns
400V, 40A, 15Ohm, 15V
78 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
SIGC61T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die