페이지 89 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  89/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP4063D1PBF
Infineon Technologies

IGBT 600V 100A 330W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 1.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,904
600V
100A
192A
2.14V @ 15V, 48A
330W
1.4mJ (on), 1.1mJ (off)
Standard
150nC
60ns/160ns
400V, 48A, 10 Ohm, 15V
80ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG6I330U-110P
Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
  • Power - Max: 43W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 39ns/120ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,296
330V
28A
-
1.55V @ 15V, 28A
43W
-
Standard
-
39ns/120ns
-
-
-
Through Hole
TO-220-3
TO-220AB
IRG4BC30FD1
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 370µJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: 22ns/250ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 46ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,592
600V
31A
120A
1.8V @ 15V, 17A
100W
370µJ (on), 1.42mJ (off)
Standard
57nC
22ns/250ns
480V, 17A, 23 Ohm, 15V
46ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4BC20FD-S
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,632
600V
16A
64A
2V @ 15V, 9A
60W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGH30N60C2D4
IXYS

IGBT 600V 60A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,232
600V
60A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
SGL60N90DG3YDTU
Fairchild/ON Semiconductor

IGBT 900V 60A 180W TO264

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고2,176
900V
60A
120A
2.7V @ 15V, 60A
180W
-
Standard
260nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXSP10N60B2D1
IXYS

IGBT 600V 20A 100W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: 30ns/180ns
  • Test Condition: 480V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고4,016
600V
20A
30A
2.5V @ 15V, 10A
100W
430µJ (off)
Standard
17nC
30ns/180ns
480V, 10A, 30 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot ISL9V2040S3S
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고60,000
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IKB20N60H3ATMA1
Infineon Technologies

IGBT 600V 40A 170W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,312
600V
40A
80A
2.4V @ 15V, 20A
170W
690µJ
Standard
120nC
16ns/194ns
400V, 20A, 14.6 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
hot APT25GP90BDQ1G
Microsemi Corporation

IGBT 900V 72A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 72A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고5,504
900V
72A
110A
3.9V @ 15V, 25A
417W
370µJ (off)
Standard
110nC
13ns/55ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGH24N120C3
IXYS

IGBT 1200V 48A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.16mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,776
1200V
48A
96A
4.2V @ 15V, 20A
250W
1.16mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH20N120B
IXYS

IGBT 1200V 40A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 190W
  • Switching Energy: 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 72nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고5,936
1200V
40A
80A
3.4V @ 15V, 20A
190W
2.1mJ (off)
Standard
72nC
25ns/150ns
960V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
AOK75B60D1
Alpha & Omega Semiconductor Inc.

IGBT 600V 150A 500W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 290A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 500W
  • Switching Energy: 3.7mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 118nC
  • Td (on/off) @ 25°C: 33ns/84ns
  • Test Condition: 400V, 75A, 4 Ohm, 15V
  • Reverse Recovery Time (trr): 147ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,840
600V
150A
290A
2.1V @ 15V, 75A
500W
3.7mJ (on), 1.3mJ (off)
Standard
118nC
33ns/84ns
400V, 75A, 4 Ohm, 15V
147ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTD23T120F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,704
1200V
-
120A
2.2V @ 15V, 25A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot STGP20NC60V
STMicroelectronics

IGBT 600V 60A 200W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,296
600V
60A
100A
2.5V @ 15V, 20A
200W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
FGY120T65SPD_F085
Fairchild/ON Semiconductor

IGBT 650V 240A 882W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 378A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A
  • Power - Max: 882W
  • Switching Energy: 6.8µJ (on), 3.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 53ns/102ns
  • Test Condition: 400V, 120A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 123ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Exposed Pad
  • Supplier Device Package: PowerTO-247-3
패키지: TO-247-3 Exposed Pad
재고6,972
650V
240A
378A
1.85V @ 15V, 120A
882W
6.8µJ (on), 3.5µJ (off)
Standard
162nC
53ns/102ns
400V, 120A, 5 Ohm, 15V
123ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Exposed Pad
PowerTO-247-3
hot SGF23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 75W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 75W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
패키지: SC-94
재고44,160
600V
23A
92A
2.6V @ 15V, 12A
75W
115µJ (on), 135µJ (off)
Standard
-
17ns/60ns
300V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
IXYH20N120C3D1
IXYS

IGBT 1200V 36A 230W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 88A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 230W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고6,640
1200V
36A
88A
3.4V @ 15V, 20A
230W
1.3mJ (on), 500µJ (off)
Standard
53nC
20ns/90ns
600V, 20A, 10 Ohm, 15V
195ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
STGWA25H120F2
STMicroelectronics

IGBT HB 1200V 25A HS TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 600µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 29ns/130ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고11,988
1200V
50A
100A
2.6V @ 15V, 25A
375W
600µJ (on), 700µJ (off)
Standard
100nC
29ns/130ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40N60SMD_F085
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 920µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 47ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고9,564
600V
80A
120A
2.5V @ 15V, 40A
349W
920µJ (on), 300µJ (off)
Standard
180nC
18ns/110ns
400V, 40A, 6 Ohm, 15V
47ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRG4PH30KDPBF
Infineon Technologies

IGBT 1200V 20A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: 950µJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 39ns/220ns
  • Test Condition: 800V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고35,070
1200V
20A
40A
4.2V @ 15V, 10A
100W
950µJ (on), 1.15mJ (off)
Standard
53nC
39ns/220ns
800V, 10A, 23 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot STGW35HF60WDI
STMicroelectronics

IGBT 600V 60A 200W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 185µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 30ns/175ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고14,844
600V
60A
150A
2.5V @ 15V, 20A
200W
185µJ (off)
Standard
140nC
30ns/175ns
390V, 20A, 10 Ohm, 15V
85ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRG4PC50UPBF
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 120µJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 32ns/170ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고17,484
600V
55A
220A
2V @ 15V, 27A
200W
120µJ (on), 540µJ (off)
Standard
180nC
32ns/170ns
480V, 27A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IGW40N120H3
Infineon Technologies

IGBT 1200V 80A 483W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 483W
  • Switching Energy: 3.16mJ
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고487,596
1200V
80A
160A
2.4V @ 15V, 40A
483W
3.16mJ
Standard
185nC
30ns/290ns
600V, 40A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SGB8206NSL3G
onsemi

IGBT D2PAK 350V 20A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGTG24N60D1
Harris Corporation

UFS SERIES N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 125 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
600 V
40 A
96 A
2.3V @ 15V, 24A
125 W
-
Standard
155 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
HGTG27N60C3R
Harris Corporation

54A, 600V, RUGGED N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 54 A
  • Current - Collector Pulsed (Icm): 108 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A
  • Power - Max: 208 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 212 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
600 V
54 A
108 A
2.2V @ 15V, 27A
208 W
-
Standard
212 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RGS80TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 73A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 272 W
  • Switching Energy: 1.05mJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 37ns/112ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고240
650 V
73 A
120 A
2.1V @ 15V, 40A
272 W
1.05mJ (on), 1.03mJ (off)
Standard
48 nC
37ns/112ns
400V, 40A, 10Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N