페이지 91 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  91/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGB20N60ATMA1
Infineon Technologies

IGBT 600V 40A 179W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 179W
  • Switching Energy: 440µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 36ns/225ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,728
600V
40A
80A
2.4V @ 15V, 20A
179W
440µJ (on), 330µJ (off)
Standard
100nC
36ns/225ns
400V, 20A, 16 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
hot TIG062E8-TL-H
ON Semiconductor

IGBT 400V ECH8

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 8V @ 3V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
패키지: 8-SMD, Flat Lead
재고66,000
400V
-
150A
8V @ 3V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
IXSH45N100
IXYS

IGBT 1000V 75A 300W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 80ns/400ns
  • Test Condition: 800V, 45A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
패키지: TO-247-3
재고7,120
1000V
75A
180A
2.7V @ 15V, 45A
300W
15mJ (off)
Standard
165nC
80ns/400ns
800V, 45A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
hot IXSH35N120B
IXYS

IGBT 1200V 70A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
패키지: TO-247-3
재고4,352
1200V
70A
140A
3.6V @ 15V, 35A
300W
5mJ (off)
Standard
120nC
36ns/160ns
960V, 35A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
FGA25N120ANTU
Fairchild/ON Semiconductor

IGBT 1200V 40A 310W TO3P

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 310W
  • Switching Energy: 4.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 60ns/170ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고7,264
1200V
40A
75A
3.2V @ 15V, 25A
310W
4.8mJ (on), 1mJ (off)
Standard
200nC
60ns/170ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
AUIRGP50B60PD1E
Infineon Technologies

IGBT 600V 75A 390W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
  • Power - Max: 390W
  • Switching Energy: 255µJ (on), 375µJ (off)
  • Input Type: Standard
  • Gate Charge: 205nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 390V, 33A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,096
600V
75A
150A
2.85V @ 15V, 50A
390W
255µJ (on), 375µJ (off)
Standard
205nC
30ns/130ns
390V, 33A, 3.3 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
AIKP20N60CTAKSA1
Infineon Technologies

IC DISCRETE 600V TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 156W
  • Switching Energy: 310µJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고4,992
600V
40A
60A
2.05V @ 15V, 20A
156W
310µJ (on), 460µJ (off)
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4RC10SDTRPBF
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,048
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGH25N250
IXYS

IGBT 2500V 60A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,920
2500V
60A
200A
5.2V @ 15V, 75A
250W
-
Standard
75nC
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGT16N170AH1
IXYS

IGBT 1700V 16A 190W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
  • Power - Max: 190W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,840
1700V
16A
40A
5V @ 15V, 11A
190W
900µJ (off)
Standard
65nC
36ns/160ns
850V, 16A, 10 Ohm, 15V
230ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
APT30GS60BRDLG
Microsemi Corporation

IGBT 600V 54A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 113A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/360ns
  • Test Condition: 400V, 30A, 9.1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,480
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH20N120
IXYS

IGBT 1200V 40A 150W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 6.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 28ns/400ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고5,056
1200V
40A
80A
2.5V @ 15V, 20A
150W
6.5mJ (off)
Standard
63nC
28ns/400ns
800V, 20A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGH15T120SMD_F155
Fairchild/ON Semiconductor

IGBT 1200V 30A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 333W
  • Switching Energy: 1.15mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 32ns/490ns
  • Test Condition: 600V, 15A, 34 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고2,448
1200V
30A
60A
2.4V @ 15V, 15A
333W
1.15mJ (on), 460µJ (off)
Standard
128nC
32ns/490ns
600V, 15A, 34 Ohm, 15V
72ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXGH40N120C3
IXYS

IGBT 1200V 75A 380W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
  • Power - Max: 380W
  • Switching Energy: 1.8mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 17ns/130ns
  • Test Condition: 600V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,568
1200V
75A
200A
4.4V @ 15V, 30A
380W
1.8mJ (on), 550µJ (off)
Standard
142nC
17ns/130ns
600V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IRG4PC50FPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: 370µJ (on), 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 31ns/240ns
  • Test Condition: 480V, 39A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고10,692
600V
70A
280A
1.6V @ 15V, 39A
200W
370µJ (on), 2.1mJ (off)
Standard
190nC
31ns/240ns
480V, 39A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT80GA60B
Microsemi Corporation

IGBT 600V 143A 625W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 143A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
  • Power - Max: 625W
  • Switching Energy: 840µJ (on), 751µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 23ns/158ns
  • Test Condition: 400V, 47A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고6,272
600V
143A
240A
2.5V @ 15V, 47A
625W
840µJ (on), 751µJ (off)
Standard
230nC
23ns/158ns
400V, 47A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot HGTG20N60B3D
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 475µJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고90,744
600V
40A
160A
2V @ 15V, 20A
165W
475µJ (on), 1.05mJ (off)
Standard
80nC
-
-
55ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRG4BC20UDPBF
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 160µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 39ns/93ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고36,000
600V
13A
52A
2.1V @ 15V, 6.5A
60W
160µJ (on), 130µJ (off)
Standard
27nC
39ns/93ns
480V, 6.5A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXXX200N65B4
IXYS

IGBT 650V 370A 1150W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 370A
  • Current - Collector Pulsed (Icm): 1000A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1150W
  • Switching Energy: 4.4mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 553nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고7,536
650V
370A
1000A
1.7V @ 15V, 160A
1150W
4.4mJ (on), 2.2mJ (off)
Standard
553nC
62ns/245ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
STGW40H120F2
STMicroelectronics

IGBT 1200V 40A HS TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 468W
  • Switching Energy: 1mJ (on), 1.32mJ (off)
  • Input Type: Standard
  • Gate Charge: 158nC
  • Td (on/off) @ 25°C: 18ns/152ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,256
1200V
80A
160A
2.6V @ 15V, 40A
468W
1mJ (on), 1.32mJ (off)
Standard
158nC
18ns/152ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRG4PH50S-EPBF
Infineon Technologies

IGBT 1200V 57A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 57A
  • Current - Collector Pulsed (Icm): 114A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 200W
  • Switching Energy: 1.8mJ (on), 19.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 32ns/845ns
  • Test Condition: 960V, 33A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고10,440
1200V
57A
114A
1.7V @ 15V, 33A
200W
1.8mJ (on), 19.6mJ (off)
Standard
167nC
32ns/845ns
960V, 33A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot ISL9V3040D3ST
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고1,348,140
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
ISL9V5036P3-F085
onsemi

IGBT 390V 46A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
재고282
390 V
46 A
-
1.6V @ 4V, 10A
250 W
-
Logic
32 nC
-/10.8µs
300V, 1kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
APT35GP120B2D2G
Microchip Technology

IGBT PT 1200V 96A TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 140 A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 540 W
  • Switching Energy: 1mJ (on), 1.185mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 14ns/99ns
  • Test Condition: 800V, 35A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: T-MAX™ [B2]
패키지: -
재고120
1200 V
96 A
140 A
3.9V @ 15V, 35A
540 W
1mJ (on), 1.185mJ (off)
Standard
150 nC
14ns/99ns
800V, 35A, 5Ohm, 15V
85 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
T-MAX™ [B2]
IXYH55N120A4
IXYS

IGBT GENX4 1200V 55A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 175 A
  • Current - Collector Pulsed (Icm): 350 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 2.3mJ (on), 5.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 23ns/300ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
재고78
1200 V
175 A
350 A
1.8V @ 15V, 55A
650 W
2.3mJ (on), 5.3mJ (off)
Standard
110 nC
23ns/300ns
600V, 40A, 5Ohm, 15V
35 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
PCRU420D-R4707
onsemi

PCRU420D-R4707

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC28T65EX1SA1
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
50 A
150 A
1.77V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKQ120N120CH7XKSA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고333
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-