페이지 18 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MX2N4860	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 40 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: TO-206AA, TO-18-3 Metal Can	재고4,672	30V	30V	100mA @ 15V	-	6V @ 500pA	18pF @ 10V	40 Ohm	360mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MV2N4391	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,336	-	-	-	-	-	-	-	-	-	-	-	-
2N5432-2	Vishay Siliconix	JFET N-CH 25V 0.3W TO-52 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Supplier Device Package: TO-206AC (TO-52)	패키지: TO-206AC, TO-52-3 Metal Can	재고4,480	25V	-	150mA @ 15V	-	4V @ 3nA	30pF @ 0V	-	300mW	-55°C ~ 150°C (TJ)	Through Hole	TO-206AC, TO-52-3 Metal Can	TO-206AC (TO-52)
2N4393-2	Vishay Siliconix	MOSFET N-CH 40V .1NA TO-18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 1.8W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고4,896	40V	-	5mA @ 20V	-	500mV @ 1nA	14pF @ 20V	100 Ohm	1.8W	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
J2A020YXS/T0BY425,	NXP	TRANSISTOR JFET 8PLLCC FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,976	-	-	-	-	-	-	-	-	-	-	-	-
2SK3372GSL	Panasonic Electronic Components	JFET N-CH 2MA 100MW SSSMINI-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 20V Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V Current Drain (Id) - Max: 2mA Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: -20°C ~ 80°C (TA) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2	패키지: SOT-723	재고5,328	-	20V	107µA @ 2V	2mA	-	-	-	100mW	-20°C ~ 80°C (TA)	Surface Mount	SOT-723	SSSMini3-F2
P1087_D74Z	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V Resistance - RDS(On): 150 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,096	30V	-	5mA @ 20V	-	5V @ 1µA	45pF @ 15V	150 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J112RL1G	ON Semiconductor	JFET N-CH 35V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,560	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	350mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PN4302	Fairchild/ON Semiconductor	JFET N-CH 30V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,792	30V	-	500µA @ 15V	-	4V @ 1nA	-	-	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN598JCTA	Fairchild/ON Semiconductor	JFET N-CH 20V 0.15W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,008	20V	-	100µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	150mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5458	ON Semiconductor	JFET N-CH 25V 0.31W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 310mW Operating Temperature: 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고50,520	25V	25V	2mA @ 15V	-	1V @ 10nA	7pF @ 15V	-	310mW	135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BSR58,215	NXP	JFET N-CH 40V 250MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 60 Ohm Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,440	40V	40V	8mA @ 15V	-	800mV @ 0.5nA	-	60 Ohm	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
MMBF5460	Fairchild/ON Semiconductor	JFET P-CH 40V 0.225W SOT23 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고128,556	40V	-	1mA @ 15V	-	750mV @ 1µA	7pF @ 15V	-	225mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MQ2N4392UB	Microchip Technology	JFET N-CH UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	3-SMD, No Lead	UB
175-DFN-8L-ROHS	Linear Integrated Systems, Inc.	JFET P-CH 30V 8DFN FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 125 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x2)	패키지: -	재고8,982	30 V	-	-	-	-	-	125 Ohms	350 mW	-55°C ~ 135°C (TJ)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x2)
MQ2N4859UB	Microchip Technology	JFET N-CH 30V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 25 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	50 mA @ 15 V	-	4 V @ 500 pA	18pF @ 10V	25 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SK1109-2-A	Renesas Electronics Corporation	JFET N-CH FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SMP5114	InterFET	JFET P-Channel 30V Low Noise FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 45 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Resistance - RDS(On): 65 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	30 V	45 mA @ 15 V	-	6 V @ 1 nA	12pF @ 10V	65 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
4392DFN-8L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V 50MA 8DFN FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V Resistance - RDS(On): 60 Ohms Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x2)	패키지: -	재고18,270	40 V	40 V	25 mA @ 20 V	50 mA	2 V @ 10 nA	13pF @ 20V	60 Ohms	300 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x2)
LS842-SOIC-8L	Linear Integrated Systems, Inc.	JFET 2N-CH 60V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고7,500	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	10pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MQ2N4861UB-TR	Microchip Technology	JFET N-CH 30V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
SST175-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET P-CH 30V SOT23-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 125 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고20,436	30 V	-	-	-	-	-	125 Ohms	350 mW	-55°C ~ 135°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MV2N4092UB	Microchip Technology	JFET N-CH FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LS841-TO-71-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	재고27	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	10pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
U406-TO-71-6L	Linear Integrated Systems, Inc.	JFET 2N-CH 50V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 50 V Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	재고1,149	50 V	50 V	500 µA @ 10 V	-	500 mV @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
LSK589-SOT-23-6L	Linear Integrated Systems, Inc.	JFET 2N-CH 25V SOT23-6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: -	재고9,000	25 V	-	7 mA @ 10 V	-	1.5 V @ 1 nA	5pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
LSK489-SOT-23-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V SOT23-6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: -	재고8,970	60 V	-	2.5 mA @ 15 V	-	1.5 V @ 1 nA	8pF @ 15V	-	500 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
CP226V-2N4392-CT20	Central Semiconductor Corp	JFET N-CH 40V 50MA DIE FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V Resistance - RDS(On): 60 Ohms Power - Max: 1.8 W Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	40 V	40 V	25 mA @ 20 V	50 mA	2 V @ 1 nA	20pF @ 20V	60 Ohms	1.8 W	-65°C ~ 175°C (TJ)	Surface Mount	Die	Die

MX2N4860

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 40 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: TO-206AA, TO-18-3 Metal Can

재고4,672

30V

100mA @ 15V

-

6V @ 500pA

18pF @ 10V

40 Ohm

360mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MV2N4391

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,336

-

2N5432-2

Vishay Siliconix

JFET N-CH 25V 0.3W TO-52

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)

패키지: TO-206AC, TO-52-3 Metal Can

재고4,480

25V

-

150mA @ 15V

-

4V @ 3nA

30pF @ 0V

-

300mW

-55°C ~ 150°C (TJ)

Through Hole

TO-206AC, TO-52-3 Metal Can

TO-206AC (TO-52)

2N4393-2

Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고4,896

40V

-

5mA @ 20V

-

500mV @ 1nA

14pF @ 20V

100 Ohm

1.8W

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

J2A020YXS/T0BY425,

NXP

TRANSISTOR JFET 8PLLCC

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,976

-

2SK3372GSL

Panasonic Electronic Components

JFET N-CH 2MA 100MW SSSMINI-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 20V
Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
Current Drain (Id) - Max: 2mA
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: -20°C ~ 80°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2

패키지: SOT-723

재고5,328

-

20V

107µA @ 2V

2mA

-

100mW

-20°C ~ 80°C (TA)

Surface Mount

SOT-723

SSSMini3-F2

P1087_D74Z

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 150 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,096

30V

-

5mA @ 20V

-

5V @ 1µA

45pF @ 15V

150 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J112RL1G

ON Semiconductor

JFET N-CH 35V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,560

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

350mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PN4302

Fairchild/ON Semiconductor

JFET N-CH 30V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,792

30V

-

500µA @ 15V

-

4V @ 1nA

-

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJN598JCTA

Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,008

20V

-

100µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

150mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5458

ON Semiconductor

JFET N-CH 25V 0.31W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 310mW
Operating Temperature: 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고50,520

25V

2mA @ 15V

-

1V @ 10nA

7pF @ 15V

-

310mW

135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BSR58,215

NXP

JFET N-CH 40V 250MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 60 Ohm
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,440

40V

8mA @ 15V

-

800mV @ 0.5nA

-

60 Ohm

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

MMBF5460

Fairchild/ON Semiconductor

JFET P-CH 40V 0.225W SOT23

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고128,556

40V

-

1mA @ 15V

-

750mV @ 1µA

7pF @ 15V

-

225mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MQ2N4392UB

Microchip Technology

JFET N-CH UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

-

Surface Mount

3-SMD, No Lead

UB

175-DFN-8L-ROHS

Linear Integrated Systems, Inc.

JFET P-CH 30V 8DFN

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 125 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x2)

패키지: -

재고8,982

30 V

-

125 Ohms

350 mW

-55°C ~ 135°C (TJ)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x2)

MQ2N4859UB

Microchip Technology

JFET N-CH 30V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

50 mA @ 15 V

-

4 V @ 500 pA

18pF @ 10V

25 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SK1109-2-A

Renesas Electronics Corporation

JFET N-CH

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SMP5114

InterFET

JFET P-Channel 30V Low Noise

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 45 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Resistance - RDS(On): 65 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

30 V

45 mA @ 15 V

-

6 V @ 1 nA

12pF @ 10V

65 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

4392DFN-8L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V 50MA 8DFN

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
Resistance - RDS(On): 60 Ohms
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x2)

패키지: -

재고18,270

40 V

25 mA @ 20 V

50 mA

2 V @ 10 nA

13pF @ 20V

60 Ohms

300 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x2)

LS842-SOIC-8L

Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고7,500

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

10pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MQ2N4861UB-TR

Microchip Technology

JFET N-CH 30V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

SST175-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET P-CH 30V SOT23-3

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 125 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고20,436

30 V

-

125 Ohms

350 mW

-55°C ~ 135°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MV2N4092UB

Microchip Technology

JFET N-CH

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LS841-TO-71-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

재고27

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

10pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

U406-TO-71-6L

Linear Integrated Systems, Inc.

JFET 2N-CH 50V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

재고1,149

50 V

500 µA @ 10 V

-

500 mV @ 1 nA

8pF @ 15V

-

300 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

LSK589-SOT-23-6L

Linear Integrated Systems, Inc.

JFET 2N-CH 25V SOT23-6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: -

재고9,000

25 V

-

7 mA @ 10 V

-

1.5 V @ 1 nA

5pF @ 10V

-

500 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

LSK489-SOT-23-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V SOT23-6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: -

재고8,970

60 V

-

2.5 mA @ 15 V

-

1.5 V @ 1 nA

8pF @ 15V

-

500 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

CP226V-2N4392-CT20

Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
Resistance - RDS(On): 60 Ohms
Power - Max: 1.8 W
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

40 V

25 mA @ 20 V

50 mA

2 V @ 1 nA

20pF @ 20V

60 Ohms

1.8 W

-65°C ~ 175°C (TJ)

Surface Mount

Die