페이지 20 - 트랜지스터 - JFET | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - JFET

기록 1,142
페이지  20/41
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SST201-T1-E3
Vishay Siliconix

JFET N-CH 25V .7MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고64,680
40V
-
200µA @ 15V
-
300mV @ 10nA
4.5pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot J110
Central Semiconductor Corp

JFET N-CH TO-92

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고12,780
-
-
-
-
-
-
-
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2N4858JTVP02
Vishay Siliconix

MOSFET JFET P-CH

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,072
-
-
-
-
-
-
-
-
-
-
-
-
2N5546JTXV01
Vishay Siliconix

JFET N-CH 50V TO-71

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6
  • Supplier Device Package: TO-71
패키지: TO-71-6
재고3,408
-
-
-
-
-
-
-
-
-
Through Hole
TO-71-6
TO-71
hot 2N4416A-E3
Vishay Siliconix

MOSFET N-CH 35V 5MA TO-206AF

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-206AF (TO-72)
패키지: TO-206AF, TO-72-4 Metal Can
재고10,524
35V
-
5mA @ 15V
-
2.5V @ 1nA
4pF @ 15V
-
300mW
-50°C ~ 150°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-206AF (TO-72)
J3A080YXS/T0BY4AG0
NXP

TRANSISTOR JFET 8PLLCC

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,216
-
-
-
-
-
-
-
-
-
-
-
-
BF246B
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고4,528
25V
-
60mA @ 15V
-
600mV @ 10nA
-
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N4859A
Central Semiconductor Corp

JFET N-CH 30V 50MA 360MW TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
  • Current Drain (Id) - Max: 250pA
  • Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V (VGS)
  • Resistance - RDS(On): 25 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고5,280
30V
30V
50mA @ 15V
250pA
10V @ 500pA
10pF @ 10V (VGS)
25 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
BF246A
Central Semiconductor Corp

SCR

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,904
-
-
-
-
-
-
-
-
-
-
-
-
CMPF4391 TR
Central Semiconductor Corp

JFET N-CH 40V 50MA SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고4,272
40V
40V
50mA @ 20V
-
4V @ 1nA
14pF @ 20V
30 Ohm
350mW
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NSVJ2394SA3T1G
ON Semiconductor

IC JFET N-CH LNA SC59-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 15V
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 32mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 700mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3/CP3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,864
15V
15V
32mA @ 5V
50mA
700mV @ 100µA
10pF @ 5V
-
200mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59-3/CP3
BSR57
Fairchild/ON Semiconductor

JFET N-CH 40V 0.25W SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,328
40V
-
20mA @ 15V
-
2V @ 0.5nA
-
40 Ohm
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SK01980RL
Panasonic Electronic Components

JFET N-CH 20MA 150MW MINI-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 10V
  • Current Drain (Id) - Max: 20mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
패키지: TO-236-3, SC-59, SOT-23-3
재고28,218
-
30V
500µA @ 10V
20mA
100mV @ 10µA
14pF @ 10V
-
150mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
2SK11030QL
Panasonic Electronic Components

JFET N-CH 20MA 150MW MINI-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
  • Current Drain (Id) - Max: 20mA
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
패키지: TO-236-3, SC-59, SOT-23-3
재고24,570
-
-
600µA @ 10V
20mA
1.5V @ 10µA
7pF @ 10V
300 Ohm
150mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
LS842-TO-71-6L
Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
패키지: -
재고1,470
60 V
-
500 µA @ 20 V
-
1 V @ 1 nA
10pF @ 20V
-
400 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
LS844-SOT-23-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V 50MA SOT23-6

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: -
재고16,485
60 V
60 V
1.5 mA @ 15 V
50 mA
1 V @ 1 nA
8pF @ 15V
-
400 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
SST406-SOIC-8L-TB
Linear Integrated Systems, Inc.

JFET 2N-CH 50V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고807
50 V
50 V
500 µA @ 10 V
-
500 mV @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CP232V-2N5486-CT
Central Semiconductor Corp

JFET N-CH

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LS5912-SOIC-8L-A
Linear Integrated Systems, Inc.

JFET 2N-CH 25V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고285
25 V
-
7 mA @ 10 V
-
1 V @ 1 nA
5pF @ 10V
-
500 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SMPJ110TR
InterFET

JFET N-Channel -25V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 0V
  • Resistance - RDS(On): 15 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
25 V
100 mA @ 15 V
-
2 V @ 0.5 nA
28pF @ 0V
15 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
IFN160BST3TR
InterFET

JFET N-Channel -50V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 330 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
50 V
-
-
1 V @ 10 µA
-
330 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
LS26VPS-DFN-8L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 40V 10MA 8DFN

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: 10 mA
  • Voltage - Cutoff (VGS off) @ Id: 7.5 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x2)
패키지: -
재고17,910
40 V
40 V
-
10 mA
7.5 V @ 1 µA
13pF @ 20V
50 Ohms
350 mW
-55°C ~ 135°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x2)
SMPJ305
InterFET

JFET N-Channel -30V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Resistance - RDS(On): 250 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
30 V
4 mA @ 15 V
-
2 V @ 1 nA
3.5pF @ 15V
250 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
SMPJ110
InterFET

JFET N-Channel -25V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 0V
  • Resistance - RDS(On): 15 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
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-
25 V
100 mA @ 15 V
-
2 V @ 0.5 nA
28pF @ 0V
15 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
MQ2N4858UB-TR
Microchip Technology

JFET N-CH 40V UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 60 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
패키지: -
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40 V
40 V
8 mA @ 15 V
-
800 mV @ 500 pA
18pF @ 10V
60 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
LS320-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 25MA SOT23-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: 25 mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200 mW
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고18,210
-
20 V
-
25 mA
-
8pF @ 10V
-
200 mW
-55°C ~ 125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SST401-SOIC-8L
Linear Integrated Systems, Inc.

JFET 2N-CH 50V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고7,500
50 V
50 V
500 µA @ 10 V
-
500 mV @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IFN160CST3
InterFET

JFET N-Channel -50V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.3 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 290 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
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-
50 V
-
-
1.3 V @ 10 µA
-
290 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3