페이지 480 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IKW30N65NL5XKSA1	Infineon Technologies	IGBT 650V 30A UFAST DIO TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Power - Max: 227W Switching Energy: 560µJ (on), 1.35mJ (off) Input Type: Standard Gate Charge: 168nC Td (on/off) @ 25°C: 59ns/283ns Test Condition: 400V, 30A, 23 Ohm, 15V Reverse Recovery Time (trr): 59ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고3,728
IPI120N06S4H1AKSA1	Infineon Technologies	MOSFET N-CH 60V 120A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고4,832
IRFP064VPBF	Infineon Technologies	MOSFET N-CH 60V 130A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	패키지: TO-247-3	재고254,316
IPP120N06S4H1AKSA2	Infineon Technologies	MOSFET N-CH 60V 120A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: TO-220-3	재고4,032
IPB80N06S4L07ATMA2	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,576
IRF60R217	Infineon Technologies	MOSFET N-CH 60V 58A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고103,464
IRF200B211	Infineon Technologies	MOSFET N-CH 200V 12A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고103,464
BCR 162 B6327	Infineon Technologies	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,960
BCM846SE6327HTSA1	Infineon Technologies	TRANS 2NPN 65V 0.1A SOT363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고2,560
BCR148SH6433XTMA1	Infineon Technologies	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고5,392
BBY5805WH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SOT323 Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio: 3.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: 1 Pair Common Cathode Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고7,248
BA592E6433HTMA1	Infineon Technologies	DIODE RF SW 35V 100MA SOD-323 Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500 mOhm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2	패키지: SC-76, SOD-323	재고5,872
IDW12G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고4,048
IRS27952STRPBF	Infineon Technologies	IC REG CTRLR BUCK/HALF-BRG 8SOIC Output Type: Transistor Driver Function: Step-Down, Step-Up/Step-Down Output Configuration: Positive, Isolation Capable Topology: Buck, Half-Bridge Number of Outputs: 2 Output Phases: 2 Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V Frequency - Switching: Up to 500Hz Duty Cycle (Max): 50% Synchronous Rectifier: Yes Clock Sync: No Serial Interfaces: - Control Features: Enable, Frequency Control Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고41,358
PSB 2132 H V2.2	Infineon Technologies	IC CODEC FILTER 2CHAN MQFP-64 Function: CODEC Filter Interface: IOM-2 PCM, SPI Number of Circuits: 2 Voltage - Supply: 5V Current - Supply: 18mA Power (Watts): 90mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 64-QFP Supplier Device Package: P-64-MQFP	패키지: 64-QFP	재고6,576
IPC60R380E6X7SA1	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
BSS119NH7796	Infineon Technologies	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-5 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: -	Request a Quote
CY9BF568MPMC-G-MNE2	Infineon Technologies	IC MCU 32B 1.03125MB FLSH 80LQFP Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Single-Core Speed: 160MHz Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 63 Program Memory Size: 1.03125MB (1.03125M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	패키지: -	Request a Quote
CYAT81685-128AA88Z	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: -	Request a Quote
CYT3DLBBEBQ1BZSGS	Infineon Technologies	IC MCU 32BIT 4.063MB FLSH 272BGA Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Speed: 240MHz Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Number of I/O: 135 Program Memory Size: 4.063MB (4.063M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 384K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: - Oscillator Type: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 272-BGA Supplier Device Package: 272-BGA	패키지: -	Request a Quote
IPP65R420CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 8.7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고1,479
SIDC06D60F6X1SA2	Infineon Technologies	DIODE GEN PURP 600V 15A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote
ISC022N10NM6ATMA1	Infineon Technologies	TRENCH >=100V PG-TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 254W (Tc) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	패키지: -	재고20,016
IFF150B12U1E4BOMA1	Infineon Technologies	INTELLIGENT POWER MODULE (IPM) Type: - Configuration: - Current: - Voltage: - Voltage - Isolation: - Package / Case: -	패키지: -	Request a Quote
FF1400R12IP4BOSA1	Infineon Technologies	IGBT MODULE 1200V 1400A IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 1400 A Power - Max: 765000 W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고9
520966231206	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
IRF40H233ATMA1	Infineon Technologies	MOSFET 2N-CH 40V 65A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V Power - Max: 3.8W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	Request a Quote
S6BP501A00SN2B000	Infineon Technologies	ANALOG Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote

IKW30N65NL5XKSA1

Infineon Technologies

IGBT 650V 30A UFAST DIO TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 85A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Power - Max: 227W
Switching Energy: 560µJ (on), 1.35mJ (off)
Input Type: Standard
Gate Charge: 168nC
Td (on/off) @ 25°C: 59ns/283ns
Test Condition: 400V, 30A, 23 Ohm, 15V
Reverse Recovery Time (trr): 59ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고3,728

IPI120N06S4H1AKSA1

Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고4,832

IRFP064VPBF

Infineon Technologies

MOSFET N-CH 60V 130A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

패키지: TO-247-3

재고254,316

IPP120N06S4H1AKSA2

Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: TO-220-3

재고4,032

IPB80N06S4L07ATMA2

Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,576

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고103,464

IRF200B211

Infineon Technologies

MOSFET N-CH 200V 12A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고103,464

BCR 162 B6327

Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,960

BCM846SE6327HTSA1

Infineon Technologies

TRANS 2NPN 65V 0.1A SOT363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고2,560

BCR148SH6433XTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고5,392

BBY5805WH6327XTSA1

Infineon Technologies

DIODE TUNING 10V 20MA SOT323

Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio: 3.5
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: 1 Pair Common Cathode
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고7,248

BA592E6433HTMA1

Infineon Technologies

DIODE RF SW 35V 100MA SOD-323

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2

패키지: SC-76, SOD-323

재고5,872

IDW12G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고4,048

IRS27952STRPBF

Infineon Technologies

IC REG CTRLR BUCK/HALF-BRG 8SOIC

Output Type: Transistor Driver
Function: Step-Down, Step-Up/Step-Down
Output Configuration: Positive, Isolation Capable
Topology: Buck, Half-Bridge
Number of Outputs: 2
Output Phases: 2
Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
Frequency - Switching: Up to 500Hz
Duty Cycle (Max): 50%
Synchronous Rectifier: Yes
Clock Sync: No
Serial Interfaces: -
Control Features: Enable, Frequency Control
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고41,358

PSB 2132 H V2.2

Infineon Technologies

IC CODEC FILTER 2CHAN MQFP-64

Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Number of Circuits: 2
Voltage - Supply: 5V
Current - Supply: 18mA
Power (Watts): 90mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 64-QFP
Supplier Device Package: P-64-MQFP

패키지: 64-QFP

재고6,576

IPC60R380E6X7SA1

Infineon Technologies

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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BSS119NH7796

Infineon Technologies

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3-5
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

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CY9BF568MPMC-G-MNE2

Infineon Technologies

IC MCU 32B 1.03125MB FLSH 80LQFP

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit Single-Core
Speed: 160MHz
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 63
Program Memory Size: 1.03125MB (1.03125M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

패키지: -

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CYAT81685-128AA88Z

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: -

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CYT3DLBBEBQ1BZSGS

Infineon Technologies

IC MCU 32BIT 4.063MB FLSH 272BGA

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Speed: 240MHz
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Number of I/O: 135
Program Memory Size: 4.063MB (4.063M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 384K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: -
Oscillator Type: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 272-BGA
Supplier Device Package: 272-BGA

패키지: -

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IPP65R420CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 8.7A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고1,479

SIDC06D60F6X1SA2

Infineon Technologies

DIODE GEN PURP 600V 15A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

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ISC022N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

패키지: -

재고20,016

IFF150B12U1E4BOMA1

Infineon Technologies

INTELLIGENT POWER MODULE (IPM)

Type: -
Configuration: -
Current: -
Voltage: -
Voltage - Isolation: -
Package / Case: -

패키지: -

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FF1400R12IP4BOSA1

Infineon Technologies

IGBT MODULE 1200V 1400A

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1400 A
Power - Max: 765000 W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고9

520966231206

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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IRF40H233ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Power - Max: 3.8W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

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S6BP501A00SN2B000

Infineon Technologies

ANALOG

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote