Infineon Technologies 제품

FS200R07A1E3BOSA1

Infineon Technologies

IGBT 650V 250A 790W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 250A
• Power - Max: 790W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 13nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: Module

IRFU3607-701PBF

Infineon Technologies

MOSFET N CH 75V 56A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

IRF7241

Infineon Technologies

MOSFET P-CH 40V 6.2A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPB50N12S3L15ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

PTFA211801E V4

Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 15.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.2A
• Power - Output: 35W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-36260-2

패키지: 2-Flatpack, Fin Leads

IRF7101TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.5A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

IGCM06F60GAXKMA1

Infineon Technologies

IGBT 600V 24MDIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 6A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

패키지: 24-PowerDIP Module (1.028", 26.10mm)

TLE4268GSXUMA2

Infineon Technologies

IC REG LINEAR 150MA 8DSO-16

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-16

패키지: 8-SOIC (0.154", 3.90mm Width)

BTS4141NNT

Infineon Technologies

IC PWR SWITCH HISIDE SOT223-4

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 12 V ~ 45 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 700mA
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223

패키지: TO-261-4, TO-261AA

BTS117BKSA1

Infineon Technologies

IC LOW SIDE SW 3.5A TO-220-3-SMT

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

패키지: TO-220-3

TLE7183FXUMA2

Infineon Technologies

IC MOTOR CONTROLLER PAR 48VQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 5.5 V ~ 20 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48

패키지: 48-VQFN Exposed Pad

AUIRS20302S

Infineon Technologies

IC GATE DRIVE AUTOMOTIVE 28SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 24 V ~ 150 V
• Logic Voltage - VIL, VIH: 0.7V, 2.5V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

FZL4146GGEGHUMA1

Infineon Technologies

IC DRIVER CIRCUIT QUAD PDSO-20-7

• Driven Configuration: High-Side
• Channel Type: Synchronous
• Number of Drivers: 4
• Gate Type: P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 40 V
• Logic Voltage - VIL, VIH: 0.7V, 2.4V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-20-7

패키지: 20-SOIC (0.295", 7.50mm Width)

C161KLMHABXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 80MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 63
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: 80-QFP
• Supplier Device Package: PG-MQFP-80

패키지: 80-QFP

ESD101B102ELSE6327XTSA1

Infineon Technologies

TVS DIODE 5.5VWM 30VC TSSLP2-4

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 7.3V (Typ)
• Voltage - Clamping (Max) @ Ipp: 30V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: RF Antenna
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: TSSLP-2-4

패키지: 2-SMD, No Lead

PVD1054

Infineon Technologies

IC RELAY 100V 160MA 8-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: DC
• On-State Resistance (Max): 8 Ohm
• Load Current: 160mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
• Supplier Device Package: 8-DIP Modified
• Relay Type: Relay

패키지: 8-DIP (0.300", 7.62mm), 4 Leads

TC297TA128F300SBCKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

CY9BF121LPMC-GNE2

Infineon Technologies

IC MCU 32BIT 96KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 50
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 23x12b SAR; D/A 2x10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

패키지: -

Request a Quote

ICE3AR10080JZTXKLA1

Infineon Technologies

1.1A, 113KHZ SWITCHING FREQ-MAX

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 17 V
• Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 22 W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
• Control Features: Soft Start
• Operating Temperature: -20°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7-4
• Mounting Type: Through Hole

패키지: -

Request a Quote

BSM50GB120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 115A 460W

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 115 A
• Power - Max: 460 W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

Request a Quote

IPT60R075CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 33A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 570µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

패키지: -

IPD60R210PFD7SAUMA1

Infineon Technologies

MOSFET N-CH 600V 16A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 64W (Tc)
• Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-344
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

STT3400N16P76XPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

패키지: -

Request a Quote

CYAT827AZS64-3200A

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

BSC080P03LSGAUMA1

Infineon Technologies

MOSFET P-CH 30V 16A/30A TDSON-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-3
• Package / Case: 8-PowerVDFN

패키지: -

IPW60R070C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 53A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
• Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 391W (Tc)
• Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

패키지: -

IPDD60R045CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 61A HDSOP-10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 379W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-10-1
• Package / Case: 10-PowerSOP Module

패키지: -

Request a Quote

SPB21N50C3ATMA1

Infineon Technologies

MOSFET N-CH 560V 21A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -