Infineon Technologies 제품

IRF7521D1TRPBF

Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRLR3715ZTR

Infineon Technologies

MOSFET N-CH 20V 49A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR3715TR

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFB3307PBF

Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IPW60R040C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.24mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

패키지: TO-247-3

PTFA240451E V1 R250

Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

• Transistor Type: LDMOS
• Frequency: 2.48GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 450mA
• Power - Output: 45W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-30265-2

패키지: 2-Flatpack, Fin Leads

PTFB211803ELV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 17.5dB
• Voltage - Test: 30V
• Current Rating: -
• Noise Figure: -
• Current - Test: 1.3A
• Power - Output: 40W
• Voltage - Rated: 65V
• Package / Case: H-33288-6
• Supplier Device Package: H-33288-6

패키지: H-33288-6

BAT6804WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 8V 130MA SOT323

• Diode Type: Schottky - 1 Pair Series Connection
• Voltage - Peak Reverse (Max): 8V
• Current - Max: 130mA
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
• Power Dissipation (Max): 150mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

IRU1010-33CD

Infineon Technologies

IC REG LINEAR 3.3V 1A DPAK

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE72792EV50XUMA1

Infineon Technologies

IC REG LINEAR 5V 180MA 14SSOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 180mA
• Current - Output: 180mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 36µA
• PSRR: 60dB (100Hz)
• Control Features: Enable, Reset
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-EP

패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

IPS1041RTRRPBF

Infineon Technologies

IC SWITCH IPS 1CH LOW SIDE DPAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 28V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.2A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRSM836-035MA

Infineon Technologies

IC MOTOR DRIVER PAR 36-PQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: Parallel
• Technology: UMOS
• Step Resolution: -
• Applications: Appliance
• Current - Output: 3A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-PowerVQFN
• Supplier Device Package: 36-PQFN (12x12)

패키지: 36-PowerVQFN

PEB 3264 F V1.4

Infineon Technologies

IC VOICE ACCESS CODEC TQFP64

• Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
• Interface: IOM-2, PCM
• Number of Circuits: 2
• Voltage - Supply: 3.3V
• Current - Supply: 105mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: P-TQFP-64

패키지: 64-LQFP

TC1130L100EBGBBFXUMA1

Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 72
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 144K x 8
• Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 208-LBGA
• Supplier Device Package: P-LBGA-208-2

패키지: 208-LBGA

BTM7751GXUMA1

Infineon Technologies

IC BRIDGE DRIVER PAR 28DSO

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 45 mOhm LS, 70 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 14A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-28

패키지: 28-SOIC (0.295", 7.50mm Width)

S29GL064S90BHI030

Infineon Technologies

IC FLASH 64MBIT PARALLEL 48FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-FBGA (8.15x6.15)

패키지: -

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CY9AF114LPMC-G-MJE1

Infineon Technologies

IC MM MCU 64LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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D4810N28TVFXPSA1

Infineon Technologies

DIODE GEN PURP 2.8KV 4810A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800 V
• Current - Average Rectified (Io): 4810A
• Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 2800 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

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FP100R07N3E4BOSA1

Infineon Technologies

IGBT MOD 650V 100A 335W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 335 W
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

S25HS512TFANHI010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x8)

패키지: -

SLE-66C84PE-MFC5-8

Infineon Technologies

IC SECURITY CTRLR 16BIT MFC5.8

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: S-MFC5.8-8-1
• Supplier Device Package: S-MFC5.8-8

패키지: -

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TLE4287G

Infineon Technologies

IC REG LINEAR FIXED STNDRD REG

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 2.5V @ 200mA
• Current - Output: 250mA
• Current - Quiescent (Iq): 5 mA
• Current - Supply (Max): -
• PSRR: 55dB (100Hz)
• Control Features: Enable, Hold, Reset
• Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

패키지: -

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IAUT260N10S5N019ATMA1

Infineon Technologies

MOSFET N-CH 100V 260A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

패키지: -

CYPM1111-40LQXIT

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number of I/O: 17
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 12K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: -

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BTS114AE3045A

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W
• Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO220-3-5
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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SPA21N50C3XKSA1

Infineon Technologies

HIGH POWER_LEGACY

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34.5W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31
• Package / Case: TO-220-3 Full Pack

패키지: -

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AIDW30E60

Infineon Technologies

DIODE GEN PURP 600V 30A TO247-3

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

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99326-02831

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote