Infineon Technologies 제품

IRG4BC30FD1

Infineon Technologies

IGBT 600V 31A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
• Power - Max: 100W
• Switching Energy: 370µJ (on), 1.42mJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: 22ns/250ns
• Test Condition: 480V, 17A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 46ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IKB20N60H3ATMA1

Infineon Technologies

IGBT 600V 40A 170W TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6 Ohm, 15V
• Reverse Recovery Time (trr): 112ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4PH30KDPBF

Infineon Technologies

IGBT 1200V 20A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 950µJ (on), 1.15mJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 39ns/220ns
• Test Condition: 800V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IGW40N120H3

Infineon Technologies

IGBT 1200V 80A 483W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 483W
• Switching Energy: 3.16mJ
• Input Type: Standard
• Gate Charge: 185nC
• Td (on/off) @ 25°C: 30ns/290ns
• Test Condition: 600V, 40A, 12 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IRF6898MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 35A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 213A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 13V
• Vgs (Max): ±16V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 35A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

패키지: DirectFET? Isometric MX

IRF7705TRPBF

Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

패키지: 8-TSSOP (0.173", 4.40mm Width)

BSS119 E6433

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

IPD60N10S412ATMA1

Infineon Technologies

MOSFET N-CH TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 46µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRLL2705TR

Infineon Technologies

MOSFET N-CH 55V 5.2A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

IRFHM830TRPBF

Infineon Technologies

MOSFET N-CH 30V 21A PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (3x3)
• Package / Case: 8-VQFN Exposed Pad

패키지: 8-VQFN Exposed Pad

IRFP4468PBF

Infineon Technologies

MOSFET N-CH 100V 195A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19860pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 180A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

패키지: TO-247-3

BC 847BT E6327

Infineon Technologies

TRANS NPN 45V 0.1A SC-75

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

BAT6804WE6327BTSA1

Infineon Technologies

DIODE SCHOTTKY RF SERIES SOT-323

• Diode Type: Schottky - 1 Pair Series Connection
• Voltage - Peak Reverse (Max): 8V
• Current - Max: 130mA
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
• Power Dissipation (Max): 150mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

IRD3CH31DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

IR3897MTR1PBF

Infineon Technologies

IC REG BUCK ADJ 4A SYNC 16-PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 18.06V
• Current - Output: 4A
• Frequency - Switching: 300kHz ~ 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-PowerVQFN
• Supplier Device Package: 16-PowerQFN

패키지: 16-PowerVQFN

111-3013

Infineon Technologies

IC REG CTRLR BUCK/BOOST 8SOIC

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Buck, Boost
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
• Frequency - Switching: 400kHz
• Duty Cycle (Max): 90%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Soft Start
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

IR2114SS

Infineon Technologies

IC DRIVER HALF-BRIDGE 24-SSOP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT
• Voltage - Supply: 11.5 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 2A, 3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 24ns, 7ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 24-SSOP

패키지: 24-SSOP (0.209", 5.30mm Width)

TLE8458GV33XUMA2

Infineon Technologies

IC LDO VREG/LIN TXRX 8DSO

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: -
• Data Rate: 20kbps
• Voltage - Supply: 7 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

ADM6999GX-A2-T-1

Infineon Technologies

IC ETHERNET SW CTRLR 128QFP

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: 2.8 V ~ 3.465 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 115°C
• Package / Case: 128-BFQFP
• Supplier Device Package: PG-BFQFP-128

패키지: 128-BFQFP

SAK-C868-1SG BA

Infineon Technologies

IC MCU 8BIT 8KB RAM PDSO28

• Core Processor: C800
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: RAM
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 5x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

패키지: 28-SOIC (0.295", 7.50mm Width)

XC2336B40F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

패키지: 64-LQFP Exposed Pad

IR38164MTRPBFAUMA1

Infineon Technologies

B_IFX POL

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 24-PowerVFQFN
• Supplier Device Package: 24-PQFN (5x7)

패키지: 24-PowerVFQFN

CHL8103-16CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

S25HS01GTFABHI033

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

패키지: -

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TZ500N14KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 1050A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 669 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

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CY15B102QN-50SXI

Infineon Technologies

IC FRAM 2MBIT SPI 50MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 2Mbit
• Memory Interface: SPI
• Clock Frequency: 50 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

패키지: -

TCA505BG2XUMA1

Infineon Technologies

INDUSTRIAL/ACCESSORY IC PG-DSO-1

• Type: Proximity Detector
• Input Type: Analog
• Output Type: Analog
• Interface: -
• Current - Supply: 840 µA
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-16

패키지: -

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IPAW60R600P7SE8228XKSA1

Infineon Technologies

MOSFET N-CH 600V 6A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 21W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

패키지: -

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