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Infineon Technologies 제품

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IRG6I330U-110P
Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
  • Power - Max: 43W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 39ns/120ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,296
IRG4BC20FD-S
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,632
BSS139L6327HTSA1
Infineon Technologies

MOSFET N-CH 250V 100MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 56µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,528
IRFR2605
Infineon Technologies

MOSFET N-CH 55V 19A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,704
IRF7321D2TR
Infineon Technologies

MOSFET P-CH 30V 4.7A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,016
IPI65R190C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 20.2A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고6,160
hot IRF4905STRRPBF
Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고45,624
IPP80N06S405AKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: TO-220-3
재고2,336
hot IRFP054NPBF
Infineon Technologies

MOSFET N-CH 55V 81A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: TO-247-3
재고43,116
AUIRLR3410TRL
Infineon Technologies

MOSFET N-CH 100V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,544
IPB025N08N3 G
Infineon Technologies

MOSFET N-CH 80V 120A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고44,784
BAR9002LSE6327XTSA1
Infineon Technologies

DIODE PIN SGL 80V 100MA TSSLP-2

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 80V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
  • Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2
패키지: 2-XFDFN
재고6,000
IRU1117-33CS
Infineon Technologies

IC REG LINEAR 3.3V 800MA 8SOIC

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 1A
  • Current - Output: 800mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,968
AUIPS7091
Infineon Technologies

IC HIGH SIDE SWITCH IPS TO220-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 35 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고7,600
IR25607STRPBF
Infineon Technologies

IC MOSFET IGBT DRIVER 16SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고4,944
hot IRS2453DSTRPBF
Infineon Technologies

IC DRIVER FULL SELF OSC 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15.6 V
  • Logic Voltage - VIL, VIH: 4.7V, 9.3V
  • Current - Peak Output (Source, Sink): 180mA, 260mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 120ns, 50ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고90,840
SAF-XC164CM-16F20F BA
Infineon Technologies

IC MCU 16BIT 128KB FLASH 64LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 20MHz
  • Connectivity: CAN, SPI, UART/USART
  • Peripherals: PWM, WDT
  • Number of I/O: 47
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
  • Data Converters: A/D 14x8/10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
패키지: 64-LQFP
재고5,248
XMC1402T038X0064AAXUMA1
Infineon Technologies

IC MCU 32BIT 64KB FLASH 38TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
  • Number of I/O: 26
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,472
XC8221FRAAAFXUMA1
Infineon Technologies

IC MCU 8BIT 4KB FLASH 16TSSOP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: I2C, SSC, UART/USART
  • Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
  • Number of I/O: 13
  • Program Memory Size: 4KB (4K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 512 x 8
  • Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
  • Data Converters: A/D 4x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,976
PVU414PBF
Infineon Technologies

IC RELAY PHOTOVO 400V 140MA 6DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 27 Ohm
  • Load Current: 140mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
  • Relay Type: Relay
패키지: 6-DIP (0.300", 7.62mm)
재고16,224
FB20R06W1E3B11HOMA1
Infineon Technologies

IGBT MODULE 600V 29A 94W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 29 A
  • Power - Max: 94 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
BSC097N06NSTATMA1
Infineon Technologies

MOSFET N-CH 60V 13A/48A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
패키지: -
재고12,675
CYPAS211A132LQXQTXUMA1
Infineon Technologies

EZ-PD PAG2S-QZ INTEGRATED USB PD

  • Output Type: PWM Signal
  • Function: Step-Up/Step-Down
  • Output Configuration: Positive
  • Topology: Flyback
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
  • Frequency - Switching: 20kHz ~ 300kHz
  • Duty Cycle (Max): 55%
  • Synchronous Rectifier: Yes
  • Clock Sync: Yes
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Package / Case: 32-WFQFN Exposed Pad
  • Supplier Device Package: 32-QFN (5x5)
패키지: -
Request a Quote
TLE9254LCXUMA1
Infineon Technologies

IC TRANSCEIVER HALF 2/2 TSON-14

  • Type: Transceiver
  • Protocol: CANbus
  • Number of Drivers/Receivers: 2/2
  • Duplex: Half
  • Receiver Hysteresis: 50 mV
  • Data Rate: 5Mbps
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TDFN Exposed Pad
  • Supplier Device Package: PG-TSON-14-3
패키지: -
Request a Quote
CY7C1362A-166AC
Infineon Technologies

IC SRAM 9MBIT 166MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: -
Request a Quote
CY8C6245FNI-S3D11T
Infineon Technologies

IC MCU 32BIT 512KB FLASH 49WLCSP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 150MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART
  • Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
  • Number of I/O: 37
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 256K x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 49-XBGA, WLCSP
  • Supplier Device Package: 49-WLCSP (2.88x3.1)
패키지: -
Request a Quote
TLE6716GRXUMA1
Infineon Technologies

TLE6716 - LIMITED DATA AVAILABLE

  • Type: -
  • Applications: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
IPP60R065S7XKSA1
Infineon Technologies

HIGH POWER_NEW PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 490µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: -
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