페이지 547 - Infineon Technologies 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559 x831
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품

기록 16,988
페이지  547/607
이미지
부품 번호
제조업체
설명
패키지
재고
수량
IRG6I330U-111P
Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
  • Power - Max: 43W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 39ns/120ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고4,864
IRG4BC20UD-S
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 160µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 39ns/93ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,968
IPI200N15N3 G
Infineon Technologies

MOSFET N-CH 150V 50A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고4,080
BS7067N06LS3G
Infineon Technologies

MOSFET N-CH 60V 20A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고4,352
hot IRL3716S
Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고390,720
IRFL1006TR
Infineon Technologies

MOSFET N-CH 60V 1.6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고5,200
hot IRL520NS
Infineon Technologies

MOSFET N-CH 100V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고31,440
AUIRF1405ZS-7P
Infineon Technologies

MOSFET N-CH 55V 120A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고7,696
IRLS3813PBF
Infineon Technologies

MOSFET N-CH 30V 160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 148A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,328
hot IRFH7934TRPBF
Infineon Technologies

MOSFET N-CH 30V 24A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고7,264
IPB029N06N3 G
Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 118µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,512
IRFI7536GPBF
Infineon Technologies

MOSFET N-CH 60V 103A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 48V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고6,180
hot BUZ31 H3045A
Infineon Technologies

MOSFET N-CH 200V 14.5A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고120,012
PTRA094252FCV1R2XTMA1
Infineon Technologies

IC RF LDMOS FET H-37248-4

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 746MHz ~ 960MHz
  • Gain: 23dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 351.5W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고7,104
hot TLE4290D
Infineon Technologies

IC REG LIN 5V 450MA TO252-5-11

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 300mA
  • Current - Output: 450mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 230µA ~ 25mA
  • PSRR: 60dB (100Hz)
  • Control Features: Delay, Power Good
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: PG-TO252-5-11
패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD
재고391,644
BTS5210LAUMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-12

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5.5 V ~ 40 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.8A
  • Rds On (Typ): 110 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-12-9
패키지: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
재고53,676
XMC4500-F144F1024 AB
Infineon Technologies

IC MCU 32BIT 1MB FLASH 144LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 91
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 160K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 32x12b, D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: 144-LQFP (20x20)
패키지: 144-LQFP Exposed Pad
재고6,096
TDK5110XUMA1
Infineon Technologies

IC TRANSMITTER ASK/FSK 16-TSSOP

  • Frequency: 433 ~ 435MHz; 866 ~ 870MHz
  • Applications: Remote Control, RKE, Security Systems
  • Modulation or Protocol: ASK, FSK
  • Data Rate (Max): 20 kbps
  • Power - Output: 11dBm
  • Current - Transmitting: 15.7mA
  • Data Interface: PCB, Surface Mount
  • Antenna Connector: PCB, Surface Mount
  • Memory Size: -
  • Features: -
  • Voltage - Supply: 2.1 V ~ 4 V
  • Operating Temperature: -40°C ~ 125°C
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고8,496
BGS18GA14E6327XTSA1
Infineon Technologies

RF SWITCH

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 3.8GHz
  • Isolation @ Frequency: 33dB @ 3.5GHz (typ)
  • Insertion Loss @ Frequency: 0.7dB @ 3.5GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP8T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 3V
  • RF Type: -
  • Package / Case: 14-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-14-4
패키지: 14-UFQFN Exposed Pad
재고35,958
IPP60R190P6XKSA1
Infineon Technologies

MOSFET N-CH 600V 20.2A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 630µ
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: -
재고9,558
CY9AF155MBBGL-GK9E1
Infineon Technologies

IC MCU 32BIT 416KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 66
  • Program Memory Size: 416KB (416K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 48K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 17x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
패키지: -
Request a Quote
FS05MR12A6MA1BBPSA1
Infineon Technologies

SIC 1200V 200A AG-HYBRIDD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
패키지: -
재고30
BAR6406WE6327
Infineon Technologies

RF PIN DIODE > ANTENNA SWITCH

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 150V
  • Current - Max: 100 mA
  • Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
  • Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max): 250 mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: -
Request a Quote
D2601NH90TXPSA1
Infineon Technologies

DIODE GEN PURP 9KV 1790A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 9000 V
  • Current - Average Rectified (Io): 1790A
  • Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
패키지: -
Request a Quote
CY8C4126LQA-S453T
Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
패키지: -
Request a Quote
TD500N18KOFHPSA2
Infineon Technologies

SCR MODULE 1800V 900A MODULE

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 500 A
  • Current - On State (It (RMS)) (Max): 900 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: -
재고6
IS26KL512S-DABLA100-TR
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
IDWD75E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고720