페이지 9 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
CPMF-1200-S080B	Cree/Wolfspeed	MOSFET N-CH SICFET 1200V 50A DIE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 313mW (Tj) Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고5,232
C3M0280090J	Cree/Wolfspeed	MOSFET N-CH 900V 11A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	재고18,312
C3M0075120K	Cree/Wolfspeed	MOSFET N-CH SICFET 1.2KV TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	패키지: TO-247-4	재고22,176
C3M0120090D	Cree/Wolfspeed	900V, 120 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고16,020
CGH09120F	Cree/Wolfspeed	RF MOSFET HEMT 28V 440095 Transistor Type: HEMT Frequency: 2.5GHz Gain: 21.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.2A Power - Output: 120W Voltage - Rated: 84V Package / Case: 440095 Supplier Device Package: 440095	패키지: 440095	재고6,368
CGH60008D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 8W Voltage - Rated: 84V Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,012
CSD08060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 12.5A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 470pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,232
C4D08120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 24.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 24.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,096
C3D08060G-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 20A TO263-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 26pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,144
C3D03060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 11.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고102,312
C3D02065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 8A TO252-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,120
C3D02060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고3,952
C3D02065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고24,858
CVFD20065A	Cree/Wolfspeed	DIODE SCHKY SIC 650V 20A TO-220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: 1100pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고7,260
C3D20060D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 600V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고4,592
CGHV40030-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40300F Type: FET Frequency: 960MHz ~ 1.4GHz For Use With/Related Products: CGHV40030 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,732
CGHV50200F-AMP	Cree/Wolfspeed	EVAL BOARD FOR CGHV50200 Type: HEMT Frequency: 4.4GHz ~ 5GHz For Use With/Related Products: CGHV50200 Supplied Contents: Board	패키지: -	재고7,686
CGHV96100F2-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV96100F2 Type: FET Frequency: 8.4GHz ~ 9.6GHz For Use With/Related Products: CGHV96100 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고4,932
CMPA0060002F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 780019 Frequency: 20MHz ~ 6GHz P1dB: - Gain: 18.8dB Noise Figure: - RF Type: - Voltage - Supply: 2 V ~ 28 V Current - Supply: - Test Frequency: 500MHz Package / Case: 780019 Supplier Device Package: 780019	패키지: 780019	재고8,226

CPMF-1200-S080B

Cree/Wolfspeed

MOSFET N-CH SICFET 1200V 50A DIE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 313mW (Tj)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고5,232

C3M0280090J

Cree/Wolfspeed

MOSFET N-CH 900V 11A

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

재고18,312

C3M0075120K

Cree/Wolfspeed

MOSFET N-CH SICFET 1.2KV TO247-4

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

패키지: TO-247-4

재고22,176

C3M0120090D

Cree/Wolfspeed

900V, 120 MOHM, G3 SIC MOSFET

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 97W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고16,020

CGH09120F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440095

Transistor Type: HEMT
Frequency: 2.5GHz
Gain: 21.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 1.2A
Power - Output: 120W
Voltage - Rated: 84V
Package / Case: 440095
Supplier Device Package: 440095

패키지: 440095

재고6,368

CGH60008D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

Transistor Type: HEMT
Frequency: 6GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 100mA
Power - Output: 8W
Voltage - Rated: 84V
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,012

CSD08060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 12.5A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 470pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,232

C4D08120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 24.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,096

C3D08060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 20A TO263-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,144

C3D03060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 11.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 11.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고102,312

C3D02065E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO252-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,120

C3D02060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고3,952

C3D02065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고24,858

CVFD20065A

Cree/Wolfspeed

DIODE SCHKY SIC 650V 20A TO-220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고7,260

C3D20060D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고4,592

CGHV40030-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40300F

Type: FET
Frequency: 960MHz ~ 1.4GHz
For Use With/Related Products: CGHV40030
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,732

CGHV50200F-AMP

Cree/Wolfspeed

EVAL BOARD FOR CGHV50200

Type: HEMT
Frequency: 4.4GHz ~ 5GHz
For Use With/Related Products: CGHV50200
Supplied Contents: Board

패키지: -

재고7,686

CGHV96100F2-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV96100F2

Type: FET
Frequency: 8.4GHz ~ 9.6GHz
For Use With/Related Products: CGHV96100
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고4,932

CMPA0060002F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

Frequency: 20MHz ~ 6GHz
P1dB: -
Gain: 18.8dB
Noise Figure: -
RF Type: -
Voltage - Supply: 2 V ~ 28 V
Current - Supply: -
Test Frequency: 500MHz
Package / Case: 780019
Supplier Device Package: 780019

패키지: 780019

재고8,226