Cree/Wolfspeed 제품 | Heisener Electronics
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Cree/Wolfspeed 제품

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CPMF-1200-S160B
Cree/Wolfspeed

MOSFET N-CH SICFET 1200V 28A DIE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
  • Vgs (Max): +25V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 202W (Tj)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고7,792
C3M0065100J
Cree/Wolfspeed

MOSFET N-CH SIC 1KV 35A D2PAK-7

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 113.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
재고6,096
C2M0025120D
Cree/Wolfspeed

MOSFET N-CH 1200V 90A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고17,262
CGH55015F1
Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 5.5GHz ~ 5.8GHz
  • Gain: 11dB
  • Voltage - Test: 28V
  • Current Rating: 1.5A
  • Noise Figure: -
  • Current - Test: 115mA
  • Power - Output: 15W
  • Voltage - Rated: 84V
  • Package / Case: 440196
  • Supplier Device Package: 440196
패키지: 440196
재고6,684
CGHV60075D5-GP4
Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 75W
  • Voltage - Rated: 150V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,736
CGHV35150F
Cree/Wolfspeed

FET RF 125V 3.5GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 2.9GHz ~ 3.5GHz
  • Gain: 13.3dB
  • Voltage - Test: 50V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 170W
  • Voltage - Rated: 125V
  • Package / Case: 440193
  • Supplier Device Package: 440193
패키지: 440193
재고5,312
CGH55015F2
Cree/Wolfspeed

FET RF 84V 5.65GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 5.65GHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 12.5W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고6,444
CGHV40100P
Cree/Wolfspeed

FET RF 125V 4GHZ 440206

  • Transistor Type: HEMT
  • Frequency: 0 ~ 4GHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 8.7A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 116W
  • Voltage - Rated: 125V
  • Package / Case: 440206
  • Supplier Device Package: 440206
패키지: 440206
재고6,948
CGHV40030F
Cree/Wolfspeed

FET RF 125V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 4.2A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 30W
  • Voltage - Rated: 125V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고6,928
CGH80030D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,816
CAS120M12BM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 193A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 193A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
  • Power - Max: 925W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,016
CSD02060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고2,112
C3D04065E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Capacitance @ Vr, F: 251pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,024
C3D03065E
Cree/Wolfspeed

DIODE SCHOTTKY 650V 3A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 155pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,392
C4D10120E
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: 754pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,184
C4D15120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고6,324
C3D06065I
Cree/Wolfspeed

DIODE SCHOTTKY 650V 13A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 13A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 295pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: TO-220-2 Isolated Tab
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2 Isolated Tab
재고19,308
hot CSD20060D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 16.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고15,108
CGHV40200PP-TB
Cree/Wolfspeed

DEV KIT

  • Type: -
  • Frequency: -
  • For Use With/Related Products: -
  • Supplied Contents: -
패키지: -
재고8,478
CRF24060-TB
Cree/Wolfspeed

EVAL BOARD FOR CRF24060

  • Type: MESFET
  • Frequency: 0Hz ~ 2.4GHz
  • For Use With/Related Products: CRF24060
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,190
CRF24010-TB
Cree/Wolfspeed

EVAL BOARD FOR CRF24010

  • Type: MESFET
  • Frequency: 0Hz ~ 2.7GHz
  • For Use With/Related Products: CRF24010
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고2,790
CGHV96050F1-TB
Cree/Wolfspeed

BOARD TEST FIXTURE FOR CGHV96050

  • Type: Transistor
  • Frequency: 7.9GHz ~ 9.6GHz
  • For Use With/Related Products: CGHV96050F1
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,730
CGH55015F-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH55015F

  • Type: Amplifier
  • Frequency: 5.5GHz ~ 5.8GHz
  • For Use With/Related Products: CGH55015F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,608
CGHV22100-TB
Cree/Wolfspeed

EVAL BOARD FOR CGHV22100

  • Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • For Use With/Related Products: CGHV22100
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고4,158
CGH40006S-KIT
Cree/Wolfspeed

FET RF HEMT 28V 100MA 440203

  • Type: Amplifier
  • Frequency: 0Hz ~ 6GHz
  • For Use With/Related Products: CGH40006S
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고8,496
CGHV14500-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV14500

  • Type: FET
  • Frequency: 1.2GHz ~ 1.4GHz
  • For Use With/Related Products: CGHV14500
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고6,840
hot CMPA0060025F-TB
Cree/Wolfspeed

BOARD DEMO AMP CKT CMPA0060025F

  • Type: Amplifier
  • Frequency: 20MHz ~ 6GHz
  • For Use With/Related Products: CMPA0060025F
  • Supplied Contents: Partially Populated Board - Main IC Not Included
패키지: -
재고3,618
hot CMPA0060025F
Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

  • Frequency: 20MHz ~ 6GHz
  • P1dB: -
  • Gain: 17dB
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: 10 V ~ 50 V
  • Current - Supply: 20mA ~ 12A
  • Test Frequency: 20MHz ~ 6GHz
  • Package / Case: 780019
  • Supplier Device Package: 780019
패키지: 780019
재고4,356