페이지 5 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

기록 805
페이지  5/29
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC07D60F6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60E6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
DZ1070N28KHPSA1
Infineon Technologies

DIODE GP 2.8KV 1070A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
2800 V
1070A
1.52 V @ 3400 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2800 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
D126B45CXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4500 V
200A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4500 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 160°C
ND171N12KHPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1200 V
171A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
SIDC78D170HX1SA1
Infineon Technologies

DIODE GP 1.7KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1700 V
150A
1.8 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
DZ600N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 735A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 735A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고9
1600 V
735A
1.4 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
ND104N18KHPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 104A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1800 V
104A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
D3501N36TXPSA1
Infineon Technologies

DIODE GEN PURP 4870A D12035K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 4870A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12035K-1
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
-
4870A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4200 V
-
Chassis Mount
DO-200AE
BG-D12035K-1
-40°C ~ 160°C
IDH05G65C5XKSA2
Infineon Technologies

DIODE SIL CARB 650V 5A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 160pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
650 V
5A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
160pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
GATELEAD1110008XPSA1
Infineon Technologies

HIGH POWER THYR / DIO

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDWD40G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 110A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
  • Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,178
1200 V
110A
1.65 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
332 µA @ 1200 V
2592pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
D1301SH45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1740A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1740A
  • Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
패키지: -
Request a Quote
4500 V
1740A
4.3 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
IDDD12G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 34A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 420 V
  • Capacitance @ Vr, F: 594pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고552
650 V
34A
-
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 420 V
594pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
SIDC02D60C8X7SA2
Infineon Technologies

DIODE GEN PURP 600V 6A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
6A
1.95 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDDD06G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 18A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 420 V
  • Capacitance @ Vr, F: 302pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
650 V
18A
-
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 420 V
302pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
D350SH45TXPSA1
Infineon Technologies

DIODE GP 4.5KV 700A D7526K0-1-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7526K0-1-1
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
4500 V
700A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AC, K-PUK
BG-D7526K0-1-1
-
D1800N46TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4.6KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4600 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4600 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
D452N18EVFXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 450A FL54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Screw Mount
  • Package / Case: Nonstandard
  • Supplier Device Package: FL54
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
1800 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1800 V
-
Screw Mount
Nonstandard
FL54
-40°C ~ 180°C
D841S45TS01XDLA1
Infineon Technologies

DIODE GP 4.5KV 1080A D7514-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1080A
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7514-1
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
Request a Quote
4500 V
1080A
3.5 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
140 mA @ 4500 V
-
Clamp On
DO-200AC, K-PUK
BG-D7514-1
125°C (Max)
GLHUELSE1626XPSA1
Infineon Technologies

DUMMY 57

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC46D170HX1SA2
Infineon Technologies

DIODE GP 1.7KV 75A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1700 V
75A
1.8 V @ 75 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
IDK05G120C5XTMA1
Infineon Technologies

DIODE SIC 1.2KV 19.1A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 19.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
  • Capacitance @ Vr, F: 301pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,874
1200 V
19.1A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
-
33 µA @ 1200 V
301pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
SIDC02D60C8F1SA1
Infineon Technologies

DIODE GEN PURP 600V 6A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
6A
1.95 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC59D170HX1SA2
Infineon Technologies

DIODE GP 1.7KV 100A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1700 V
100A
1.8 V @ 100 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
DZ540N26KHPSA1
Infineon Technologies

DIODE GEN PURP 2.6KV 732A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600 V
  • Current - Average Rectified (Io): 732A
  • Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
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2600 V
732A
1.64 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
AIDW30E60
Infineon Technologies

DIODE GEN PURP 600V 30A TO247-3

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
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-
-
-
-
-
-
-
-
-
-
-
BAS40B5003
Infineon Technologies

DIODE SCHOTT 40V 120MA SOT23-3-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
  • Operating Temperature - Junction: 150°C
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40 V
120mA
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 30 V
3pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3
150°C