페이지 7 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

기록 805
페이지  7/29
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC08D60C8X1SA2
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
30A
1.95 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC08D60C8X1SA3
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
30A
1.95 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDD03SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 3A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고5,418
600 V
3A
2.3 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 600 V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
ND104N12KHPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 104A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1200 V
104A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
D400N22BVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.2KV 450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
2200 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
D121N12BXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
1200 V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
BAS16WE6327
Infineon Technologies

DIODE GP 80V 250MA SOT323-3-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
80 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3-1
150°C
DZ435N36KHPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 700A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
3600 V
700A
1.71 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 3600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
ND260N16KHPSA1
Infineon Technologies

DIODE GP 1.6KV 260A PB50ND-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 260A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1600 V
260A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1600 V
-
Chassis Mount
Module
BG-PB50ND-1
-40°C ~ 135°C
D471N90TXPSA1
Infineon Technologies

DIODE GEN PURP 9KV 760A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 9000 V
  • Current - Average Rectified (Io): 760A
  • Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 9000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
9000 V
760A
3.2 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 9000 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
D126A45CXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4500 V
200A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4500 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 160°C
IDK08G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 8A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고3,000
650 V
8A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-
250pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
D2450N07TXPSA1
Infineon Technologies

DIODE GEN PURP 700V 2450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 700 V
  • Current - Average Rectified (Io): 2450A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
700 V
2450A
880 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 700 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 180°C
SIDC32D170HX1SA3
Infineon Technologies

DIODE GP 1.7KV 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1700 V
50A
1.8 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
IDP09E120XKSA1
Infineon Technologies

DIODE GP 1.2KV 23A TO220-2-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 23A
  • Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1200 V
23A
2.15 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
140 ns
100 µA @ 1200 V
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 150°C
SIDC14D60C8X7SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
D2700U45X122XOSA1
Infineon Technologies

DIODE GP 4.5KV 2900A D12026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2900A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12026K-1
  • Operating Temperature - Junction: 140°C (Max)
패키지: -
재고6
4500 V
2900A
-
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
BG-D12026K-1
140°C (Max)
SIDC14D60E6X1SA1
Infineon Technologies

DIODE GP 600V 30A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60E6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
SIDC14D60E6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
D1961SH45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 2380A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2380A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
패키지: -
Request a Quote
4500 V
2380A
2.5 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
D2200N20TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2200A D7526K0-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7526K0-1
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
-
2200A
-
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2000 V
-
Clamp On
DO-200AC, K-PUK
BG-D7526K0-1
-40°C ~ 160°C
SIDC42D120H8X1SA3
Infineon Technologies

DIODE GP 1.2KV 75A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
75A
1.97 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D400N12BXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
1200 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1200 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
IDD10SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 10A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 600 V
  • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고1,089
600 V
10A
2.1 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 600 V
290pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
BAT54B5000
Infineon Technologies

DIODE SCHOT 30V 200MA SOT23-3-11

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-11
  • Operating Temperature - Junction: 150°C
패키지: -
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30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-11
150°C
BAT54B5003
Infineon Technologies

DIODE SCHOTTKY SOT23

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: -
패키지: -
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-
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
-
IDWD30G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 87A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 87A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 248 µA @ 1200 V
  • Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,727
1200 V
87A
1.65 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
248 µA @ 1200 V
1980pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C