페이지 8 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-836
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

기록 805
페이지  8/29
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
D3041N65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 4090A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 4090A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
6500 V
4090A
1.7 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6500 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D3001N68TXPSA1
Infineon Technologies

DIODE GEN PURP 6.8KV 3910A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 3910A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
6800 V
3910A
1.7 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6800 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D471N85TXPSA1
Infineon Technologies

DIODE GEN PURP 8.5KV 760A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 8500 V
  • Current - Average Rectified (Io): 760A
  • Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 8500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
8500 V
760A
3.2 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 8500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
SIDC14D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60C8X1SA3
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60C8X1SA2
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
BAS70E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
재고86,694
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
-55°C ~ 125°C
D1030N24TXPSA1
Infineon Technologies

DIODE GEN PURP 2.4KV 1030A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 1030A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
2400 V
1030A
1.11 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2400 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDP23013XUMA1
Infineon Technologies

IC AC/DC DGTL PLATFORM 16SOIC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDH08SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 8A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 600 V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,010
600 V
8A
2.1 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 600 V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
DZ1070N22KHPSA3
Infineon Technologies

DIODE GP 2.2KV 1100A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
2200 V
1100A
1.11 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2200 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
IDWD120E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 120 A
  • Speed: Fast Recovery =< 500ns, > 5A (Io)
  • Reverse Recovery Time (trr): 98 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고720
650 V
150A
2.1 V @ 120 A
Fast Recovery =< 500ns, > 5A (Io)
98 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
SIDC07D60E6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
15A
1.25 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
SIDC07D60E6X1SA1
Infineon Technologies

DIODE GP 600V 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
15A
1.25 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
250 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D60F6X1SA2
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
1.6 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC06D60F6X1SA3
Infineon Technologies

DIODE GP 600V 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
600 V
15A
1.6 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC06D60F6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
1.6 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDWD30E65E7XKSA1
Infineon Technologies

HOME APPLIANCES 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 82 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -
패키지: -
재고621
650 V
50A
2.1 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
82 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-
AIDK16S65C5ATMA1
Infineon Technologies

SIC_DISCRETE PG-TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 483pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
16A
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
483pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-40°C ~ 175°C
D450S16TXPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 443A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 443A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6.2 µs
  • Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -25°C ~ 180°C
패키지: -
Request a Quote
1600 V
443A
2.25 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
6.2 µs
10 mA @ 1600 V
-
Clamp On
DO-200AA, A-PUK
-
-25°C ~ 180°C
SIDC08D120H8X1SA1
Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
150A
1.41 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
-
-
-
-40°C ~ 175°C
IDWD20G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 62A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 62A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 166 µA @ 1200 V
  • Capacitance @ Vr, F: 1368pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고1,950
1200 V
62A
1.65 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
166 µA @ 1200 V
1368pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
D56S45CXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 102A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 102A
  • Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.3 µs
  • Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
4500 V
102A
4.5 V @ 320 A
Standard Recovery >500ns, > 200mA (Io)
3.3 µs
5 mA @ 4500 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 125°C
SIDC14D120E6X1SA4
Infineon Technologies

DIODE GP 1.2KV 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1200 V
15A
1.9 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
D1821SH45TPRXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 2210A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2210A
  • Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
패키지: -
Request a Quote
4500 V
2210A
3.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
36DN30ELEMENTEVXPSA1
Infineon Technologies

DIODE GENERAL PURPOSE E-EUPEC-0

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D1050N18TXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 1050A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 1050A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
1800 V
1050A
1 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
60 mA @ 1800 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 180°C
SIDC08D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
30A
1.95 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C