Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FF8MR12W1M1HS4PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V Vgs(th) (Max) @ Id: 5.15V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고90	-	1200V (1.2kV)	100A (Tj)	8.1mOhm @ 100A, 18V	5.15V @ 40mA	297nC @ 18V	8800pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B
FF33MR12W1M1HPB11BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고84	-	-	-	-	-	-	-	-	-	-	-	-
FF4MR12W2M1HPB11BPSA1	Infineon Technologies	LOW POWER EASY FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	패키지: -	재고54	-	1200V (1.2kV)	170A	4mOhm @ 200A, 18V	5.15V @ 80mA	594nC @ 18V	17600pF @ 800V	20mW	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY2B
FF33MR12W1M1HB11BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고66	-	-	-	-	-	-	-	-	-	-	-	-
DF16MR12W1M1HFB67BPSA1	Infineon Technologies	MOSFET 2N-CH 1200V 25A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V Vgs(th) (Max) @ Id: 5.15V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고72	-	1200V (1.2kV)	25A	32.3mOhm @ 25A, 18V	5.15V @ 10mA	74nC @ 18V	2200pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
IRF8910TRPBF-1	Infineon Technologies	MOSFET 2N-CH 20V 10A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	20V	10A (Ta)	13.4mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N04S409AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	재고15,000	-	40V	20A (Tc)	8.6mOhm @ 17A, 10V	4V @ 22µA	28nC @ 10V	2250pF @ 25V	54W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FF4MR20KM1HPHPSA1	Infineon Technologies	SIC 2N-CH 2000V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	패키지: -	재고30	-	2000V (2kV)	280A (Tc)	5.3mOhm @ 300A, 18V	5.15V @ 168mA	1170nC @ 18V	36100pF @ 1.2kV	-	-40°C ~ 175°C	Chassis Mount	Module	AG-62MMHB
BSZ0907NDXTMA2	Infineon Technologies	MOSFET 2N-CH 30V 6.7A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8.5A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V, 7.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V, 900pF @ 15V Power - Max: 700mW (Ta), 860mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	패키지: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	6.7A (Ta), 8.5A (Ta)	9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V	2V @ 250µA	6.4nC @ 4.5V, 7.9nC @ 4.5V	730pF @ 15V, 900pF @ 15V	700mW (Ta), 860mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8
FF2MR12W3M1HB11BPSA1	Infineon Technologies	SIC 4N-CH 1200V AG-EASY3B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY3B	패키지: -	재고27	-	1200V (1.2kV)	400A (Tj)	2.27mOhm @ 400A, 18V	5.15V @ 224mA	1600nC @ 18V	48400pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY3B
IRLHS6276TR2PBF	Infineon Technologies	MOSFET 2N-CH 20V 4.5A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2)	패키지: -	Request a Quote	Logic Level Gate	20V	4.5A	45mOhm @ 3.4A, 4.5V	1.1V @ 10µA	3.1nC @ 4.5V	310pF @ 10V	1.5W	-	Surface Mount	6-PowerVDFN	6-PQFN Dual (2x2)
IRF40H233ATMA1	Infineon Technologies	MOSFET 2N-CH 40V 65A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V Power - Max: 3.8W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	Request a Quote	-	40V	65A (Tc)	6.2mOhm @ 35A, 10V	3.9V @ 50µA	57nC @ 10V	2200pF @ 20V	3.8W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IRFH7911TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 13A/28A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Power - Max: 2.4W, 3.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 18-PowerVQFN Supplier Device Package: PQFN (5x6)	패키지: -	Request a Quote	Logic Level Gate	30V	13A, 28A	8.6mOhm @ 12A, 10V	2.35V @ 25µA	12nC @ 4.5V	1060pF @ 15V	2.4W, 3.4W	-	Surface Mount	18-PowerVQFN	PQFN (5x6)
BSC112N06LDATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	재고36,963	Logic Level Gate	60V	20A (Tc)	11.2mOhm @ 17A, 10V	2.2V @ 28µA	55nC @ 10V	4020pF @ 30V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IRF7306QTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 3.6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	-	30V	3.6A	100mOhm @ 1.8A, 10V	1V @ 250µA	25nC @ 10V	440pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FF2MR12KM1HPHPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	패키지: -	재고36	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MMHB
FF17MR12W1M1HB70BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고63	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
IPB13N03LBG	Infineon Technologies	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0908NDXTMA2	Infineon Technologies	MOSFET 2N-CH 30V 4.8A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V Power - Max: 700mW (Ta), 860mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	패키지: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	4.8A (Ta), 7.6A (Ta)	18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V	2V @ 250µA	3nC @ 4.5V, 6.4nC @ 4.5V	340pF @ 15V, 730pF @ 15V	700mW (Ta), 860mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8
IRF7316QTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	30V	4.9A	58mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FF5MR20KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FS13MR12W2M1HPB11BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고51	-	-	-	-	-	-	-	-	-	-	-	-
DF8MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 2N-CH 1200V 45A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고18	-	1200V (1.2kV)	45A	16.2mOhm @ 50A, 18V	5.15V @ 20mA	149nC @ 18V	4400pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY1B
BSC155N06NDATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Power - Max: 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	재고21,720	-	60V	20A (Tc)	15.5mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2250pF @ 30V	50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FF4MR12KM1H	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FS13MR12W2M1HB70BPSA1	Infineon Technologies	SIC 6N-CH 1200V 62.5A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V Vgs(th) (Max) @ Id: 5.15V @ 28mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고36	-	1200V (1.2kV)	62.5A (Tc)	11.7mOhm @ 62.5A, 18V	5.15V @ 28mA	200nC @ 18V	6050pF @ 800V	-	-	-	-	-
IAUC60N04S6N050HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Power - Max: 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	패키지: -	재고13,599	-	40V	60A (Tj)	5mOhm @ 30A, 10V	3V @ 13µA	17nC @ 10V	1027pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
FF6MR12W2M1B11BOMA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY2BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2BM-2	패키지: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY2BM-2

FF8MR12W1M1HS4PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고90

-

1200V (1.2kV)

100A (Tj)

8.1mOhm @ 100A, 18V

5.15V @ 40mA

297nC @ 18V

8800pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B

FF33MR12W1M1HPB11BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고84

-

FF4MR12W2M1HPB11BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

패키지: -

재고54

-

1200V (1.2kV)

170A

4mOhm @ 200A, 18V

5.15V @ 80mA

594nC @ 18V

17600pF @ 800V

20mW

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY2B

FF33MR12W1M1HB11BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고66

-

DF16MR12W1M1HFB67BPSA1

Infineon Technologies

MOSFET 2N-CH 1200V 25A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고72

-

1200V (1.2kV)

25A

32.3mOhm @ 25A, 18V

5.15V @ 10mA

74nC @ 18V

2200pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

-

IRF8910TRPBF-1

Infineon Technologies

MOSFET 2N-CH 20V 10A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

Request a Quote

-

20V

10A (Ta)

13.4mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG20N04S409AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 54W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

재고15,000

-

40V

20A (Tc)

8.6mOhm @ 17A, 10V

4V @ 22µA

28nC @ 10V

2250pF @ 25V

54W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

FF4MR20KM1HPHPSA1

Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
Power - Max: -
Operating Temperature: -40°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

패키지: -

재고30

-

2000V (2kV)

280A (Tc)

5.3mOhm @ 300A, 18V

5.15V @ 168mA

1170nC @ 18V

36100pF @ 1.2kV

-

-40°C ~ 175°C

Chassis Mount

Module

AG-62MMHB

BSZ0907NDXTMA2

Infineon Technologies

MOSFET 2N-CH 30V 6.7A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V, 7.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V, 900pF @ 15V
Power - Max: 700mW (Ta), 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

패키지: -

Request a Quote

Logic Level Gate, 4.5V Drive

30V

6.7A (Ta), 8.5A (Ta)

9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V

2V @ 250µA

6.4nC @ 4.5V, 7.9nC @ 4.5V

730pF @ 15V, 900pF @ 15V

700mW (Ta), 860mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-WISON-8

FF2MR12W3M1HB11BPSA1

Infineon Technologies

SIC 4N-CH 1200V AG-EASY3B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY3B

패키지: -

재고27

-

1200V (1.2kV)

400A (Tj)

2.27mOhm @ 400A, 18V

5.15V @ 224mA

1600nC @ 18V

48400pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY3B

IRLHS6276TR2PBF

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 1.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Supplier Device Package: 6-PQFN Dual (2x2)

패키지: -

Request a Quote

Logic Level Gate

20V

4.5A

45mOhm @ 3.4A, 4.5V

1.1V @ 10µA

3.1nC @ 4.5V

310pF @ 10V

1.5W

-

Surface Mount

6-PowerVDFN

6-PQFN Dual (2x2)

IRF40H233ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Power - Max: 3.8W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

Request a Quote

-

40V

65A (Tc)

6.2mOhm @ 35A, 10V

3.9V @ 50µA

57nC @ 10V

2200pF @ 20V

3.8W (Ta), 50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IRFH7911TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Power - Max: 2.4W, 3.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 18-PowerVQFN
Supplier Device Package: PQFN (5x6)

패키지: -

Request a Quote

Logic Level Gate

30V

13A, 28A

8.6mOhm @ 12A, 10V

2.35V @ 25µA

12nC @ 4.5V

1060pF @ 15V

2.4W, 3.4W

-

Surface Mount

18-PowerVQFN

PQFN (5x6)

BSC112N06LDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

재고36,963

Logic Level Gate

60V

20A (Tc)

11.2mOhm @ 17A, 10V

2.2V @ 28µA

55nC @ 10V

4020pF @ 30V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IRF7306QTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

Request a Quote

-

30V

3.6A

100mOhm @ 1.8A, 10V

1V @ 250µA

25nC @ 10V

440pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FF2MR12KM1HPHPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-62MMHB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

패키지: -

재고36

-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MMHB

FF17MR12W1M1HB70BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고63

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

IPB13N03LBG

Infineon Technologies

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BSZ0908NDXTMA2

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
Power - Max: 700mW (Ta), 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

패키지: -

Request a Quote

Logic Level Gate, 4.5V Drive

30V

4.8A (Ta), 7.6A (Ta)

18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V

2V @ 250µA

3nC @ 4.5V, 6.4nC @ 4.5V

340pF @ 15V, 730pF @ 15V

700mW (Ta), 860mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-WISON-8

IRF7316QTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

Request a Quote

Logic Level Gate

30V

4.9A

58mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FF5MR20KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS13MR12W2M1HPB11BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고51

-

DF8MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 2N-CH 1200V 45A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고18

-

1200V (1.2kV)

45A

16.2mOhm @ 50A, 18V

5.15V @ 20mA

149nC @ 18V

4400pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY1B

BSC155N06NDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Power - Max: 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

재고21,720

-

60V

20A (Tc)

15.5mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2250pF @ 30V

50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

FF4MR12KM1H

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS13MR12W2M1HB70BPSA1

Infineon Technologies

SIC 6N-CH 1200V 62.5A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 28mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고36

-

1200V (1.2kV)

62.5A (Tc)

11.7mOhm @ 62.5A, 18V

5.15V @ 28mA

200nC @ 18V

6050pF @ 800V

-

IAUC60N04S6N050HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Power - Max: 52W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

패키지: -

재고13,599

-

40V

60A (Tj)

5mOhm @ 30A, 10V

3V @ 13µA

17nC @ 10V

1027pF @ 25V

52W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57

FF6MR12W2M1B11BOMA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY2BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2BM-2

패키지: -

Request a Quote

-

1200V (1.2kV)

200A (Tj)

5.63mOhm @ 200A, 15V

5.55V @ 80mA

496nC @ 15V

14700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY2BM-2