페이지 2 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7507TR	Infineon Technologies	MOSFET N/P-CH 20V MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	패키지: -	Request a Quote	Logic Level Gate	20V	2.4A, 1.7A	140mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
IRFHM792TR2PBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN-Dual (3.3x3.3)	패키지: -	Request a Quote	-	100V	2.3A	195mOhm @ 2.9A, 10V	4V @ 10µA	6.3nC @ 10V	251pF @ 25V	2.3W	-	Surface Mount	8-PowerVDFN	8-PQFN-Dual (3.3x3.3)
IRF7506TR	Infineon Technologies	MOSFET 2P-CH 30V 1.7A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	패키지: -	Request a Quote	Logic Level Gate	30V	1.7A	270mOhm @ 1.2A, 10V	1V @ 250µA	11nC @ 10V	180pF @ 25V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
IRF7501TR	Infineon Technologies	MOSFET 2N-CH 20V 2.4A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	패키지: -	Request a Quote	Logic Level Gate	20V	2.4A	135mOhm @ 1.7A, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
IRF7503TR	Infineon Technologies	MOSFET 2N-CH 30V 2.4A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	패키지: -	Request a Quote	Logic Level Gate	30V	2.4A	135mOhm @ 1.7A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
BSO303PHXUMA1	Infineon Technologies	MOSFET 2P-CH 30V 7A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: -	Request a Quote	Logic Level Gate	30V	7A	21mOhm @ 8.2A, 10V	2V @ 100µA	49nC @ 10V	2678pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
FF1MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고48	-	-	-	-	-	-	-	-	-	-	-	-
IRF7341TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 55V 4.7A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	패키지: -	재고16,641	Logic Level Gate	55V	4.7A (Tc)	50mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
DF419MR20W3M1HFB11BPSA1	Infineon Technologies	MOSFET 4N-CH 2000V 50A AG-EASY3B FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V Vgs(th) (Max) @ Id: 5.15V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY3B	패키지: -	재고3	-	2000V (2kV)	50A (Tj)	26.5mOhm @ 60A, 18V	5.15V @ 34mA	234nC @ 18V	7240pF @ 1.2kV	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY3B
DF23MR12W1M1B11BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	패키지: -	재고36	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V (Typ)	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
BSO615NGHUMA1	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: -	Request a Quote	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
IPG20N04S418AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V Power - Max: 26W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: -	Request a Quote	-	40V	20A (Tc)	18.4mOhm @ 17A, 10V	4V @ 8µA	15nC @ 10V	789pF @ 25V	26W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
FS03MR12A6MA1LB	Infineon Technologies	SIC 6N-CH 1200V AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	패키지: -	Request a Quote	-	1200V (1.2kV)	400A	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42600pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-2
BSO615NGXUMA1	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: -	재고80,190	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
FF08MR12W1MA1B11ABPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A (Tj) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 5.55V @ 90mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	패키지: -	재고57	-	1200V (1.2kV)	150A (Tj)	9.8mOhm @ 150A, 15V	5.55V @ 90mA	450nC @ 15V	16000pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
FF8MR12W1M1HB70BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고72	-	-	-	-	-	-	-	-	-	-	-	-
IRF7555TR	Infineon Technologies	MOSFET 2P-CH 20V 4.3A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	패키지: -	Request a Quote	Logic Level Gate	20V	4.3A	55mOhm @ 4.3A, 4.5V	1.2V @ 250µA	15nC @ 5V	1066pF @ 10V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
FF3MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 375A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	패키지: -	Request a Quote	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
AUIRFN8458TRXTMA1	Infineon Technologies	MOSFET 2N-CH 40V 43A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	Request a Quote	-	40V	43A (Tc)	10mOhm @ 26A, 10V	3.9V @ 25µA	33nC @ 10V	2250pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
FS45MR12W1M1B11BOMA1	Infineon Technologies	SIC 6N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	패키지: -	재고318	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V (Typ)	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
IRF7904TRPBF-1	Infineon Technologies	MOSFET 2N-CH 30V 7.6A/11A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	30V	7.6A, 11A	16.2mOhm @ 7.6A, 10V	2.25V @ 25µA	11nC @ 4.5V	910pF @ 15V	1.4W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FF6MR12W2M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 200A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
ITD50N04S4L07ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 18µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-311	패키지: -	Request a Quote	Logic Level Gate	40V	50A (Tc)	7.2mOhm @ 50A, 10V	2.2V @ 18µA	33nC @ 10V	2480pF @ 25V	46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	PG-TO252-5-311
IRF7379QTRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	30V	5.8A, 4.3A	45mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FF3MR12KM1HPHPSA1	Infineon Technologies	FF3MR12KM1HPHPSA1 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V Vgs(th) (Max) @ Id: 5.1V @ 112mA Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	패키지: -	Request a Quote	-	1200V (1.2kV)	220A	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
IRF7303TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 4.9A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	패키지: -	재고35,955	-	30V	4.9A (Ta)	50mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
FF2MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	패키지: -	Request a Quote	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
BSZ0910NDXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 9.5A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.9W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	패키지: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	9.5A (Ta), 25A (Tc)	9.5mOhm @ 9A, 10V	2V @ 250µA	5.6nC @ 4.5V	800pF @ 15V	1.9W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8

IRF7507TR

Infineon Technologies

MOSFET N/P-CH 20V MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

패키지: -

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Logic Level Gate

20V

2.4A, 1.7A

140mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

IRFHM792TR2PBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)

패키지: -

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-

100V

2.3A

195mOhm @ 2.9A, 10V

4V @ 10µA

6.3nC @ 10V

251pF @ 25V

2.3W

-

Surface Mount

8-PowerVDFN

8-PQFN-Dual (3.3x3.3)

IRF7506TR

Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

패키지: -

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Logic Level Gate

30V

1.7A

270mOhm @ 1.2A, 10V

1V @ 250µA

11nC @ 10V

180pF @ 25V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

IRF7501TR

Infineon Technologies

MOSFET 2N-CH 20V 2.4A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

패키지: -

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Logic Level Gate

20V

2.4A

135mOhm @ 1.7A, 4.5V

700mV @ 250µA

8nC @ 4.5V

260pF @ 15V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

IRF7503TR

Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

패키지: -

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Logic Level Gate

30V

2.4A

135mOhm @ 1.7A, 10V

1V @ 250µA

12nC @ 10V

210pF @ 25V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

BSO303PHXUMA1

Infineon Technologies

MOSFET 2P-CH 30V 7A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: -

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Logic Level Gate

30V

7A

21mOhm @ 8.2A, 10V

2V @ 100µA

49nC @ 10V

2678pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

FF1MR12KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고48

-

IRF7341TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8DSO-902

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-902

패키지: -

재고16,641

Logic Level Gate

55V

4.7A (Tc)

50mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8-902

DF419MR20W3M1HFB11BPSA1

Infineon Technologies

MOSFET 4N-CH 2000V 50A AG-EASY3B

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY3B

패키지: -

재고3

-

2000V (2kV)

50A (Tj)

26.5mOhm @ 60A, 18V

5.15V @ 34mA

234nC @ 18V

7240pF @ 1.2kV

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY3B

DF23MR12W1M1B11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

패키지: -

재고36

-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V (Typ)

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1BM-2

BSO615NGHUMA1

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: -

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Logic Level Gate

60V

2.6A

150mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

IPG20N04S418AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
Power - Max: 26W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: -

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-

40V

20A (Tc)

18.4mOhm @ 17A, 10V

4V @ 8µA

15nC @ 10V

789pF @ 25V

26W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

FS03MR12A6MA1LB

Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

패키지: -

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-

1200V (1.2kV)

400A

3.7mOhm @ 400A, 15V

5.55V @ 240mA

1320nC @ 15V

42600pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-HYBRIDD-2

BSO615NGXUMA1

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: -

재고80,190

Logic Level Gate

60V

2.6A

150mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

FF08MR12W1MA1B11ABPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 150A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 90mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

패키지: -

재고57

-

1200V (1.2kV)

150A (Tj)

9.8mOhm @ 150A, 15V

5.55V @ 90mA

450nC @ 15V

16000pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1BM-2

FF8MR12W1M1HB70BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고72

-

IRF7555TR

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

패키지: -

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Logic Level Gate

20V

4.3A

55mOhm @ 4.3A, 4.5V

1.2V @ 250µA

15nC @ 5V

1066pF @ 10V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

FF3MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

패키지: -

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-

1200V (1.2kV)

375A (Tc)

2.83mOhm @ 375A, 15V

5.15V @ 168mA

1000nC @ 15V

29800pF @ 25V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

AUIRFN8458TRXTMA1

Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

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-

40V

43A (Tc)

10mOhm @ 26A, 10V

3.9V @ 25µA

33nC @ 10V

2250pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)

FS45MR12W1M1B11BOMA1

Infineon Technologies

SIC 6N-CH 1200V AG-EASY1BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

패키지: -

재고318

-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V (Typ)

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1BM-2

IRF7904TRPBF-1

Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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Logic Level Gate

30V

7.6A, 11A

16.2mOhm @ 7.6A, 10V

2.25V @ 25µA

11nC @ 4.5V

910pF @ 15V

1.4W, 2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FF6MR12W2M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 200A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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-

1200V (1.2kV)

200A (Tj)

5.63mOhm @ 200A, 15V

5.55V @ 80mA

496nC @ 15V

14700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

ITD50N04S4L07ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-311

패키지: -

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Logic Level Gate

40V

50A (Tc)

7.2mOhm @ 50A, 10V

2.2V @ 18µA

33nC @ 10V

2480pF @ 25V

46W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

PG-TO252-5-311

IRF7379QTRPBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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Logic Level Gate

30V

5.8A, 4.3A

45mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FF3MR12KM1HPHPSA1

Infineon Technologies

FF3MR12KM1HPHPSA1

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

패키지: -

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-

1200V (1.2kV)

220A

4.44mOhm @ 280A, 18V

5.1V @ 112mA

800nC @ 18V

24200pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-62MMHB

IRF7303TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8DSO-902

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-902

패키지: -

재고35,955

-

30V

4.9A (Ta)

50mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8-902

FF2MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

패키지: -

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-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

BSZ0910NDXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 9.5A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power - Max: 1.9W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

패키지: -

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Logic Level Gate, 4.5V Drive

30V

9.5A (Ta), 25A (Tc)

9.5mOhm @ 9A, 10V

2V @ 250µA

5.6nC @ 4.5V

800pF @ 15V

1.9W (Ta), 31W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-WISON-8