페이지 5 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IAUC60N04S6N031HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-56	패키지: -	재고28,929	-	40V	60A (Tj)	3.1mOhm @ 30A, 10V	3V @ 25µA	30nC @ 10V	1922pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
IPG20N04S4L18AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Power - Max: 26W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: -	재고14,310	-	40V	20A (Tc)	18mOhm @ 17A, 10V	2.2V @ 8µA	15nC @ 10V	1071pF @ 25V	26W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
IRF7307QTRPBF	Infineon Technologies	MOSFET N/P-CH 20V 5.2A/4.3A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	20V	5.2A, 4.3A	50mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7341QTRPBF	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote	Logic Level Gate	55V	5.1A	50mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSO220N03MDGXUMA1	Infineon Technologies	MOSFET 2N-CH 30V 6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: -	재고45,426	Logic Level Gate	30V	6A	22mOhm @ 7.7A, 10V	2.1V @ 250µA	10nC @ 10V	800pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
F445MR12W1M1B76BPSA1	Infineon Technologies	SIC 4N-CH 1200V 25A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	패키지: -	Request a Quote	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
IQE220N15NM5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: PG-WHSON-8	패키지: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	8-PowerWDFN	PG-WHSON-8
FF11MR12W1M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B
64-2013PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FF11MR12W1M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	패키지: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
IAUC45N04S6L063HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 45A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Power - Max: 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	패키지: -	Request a Quote	Logic Level Gate	40V	45A (Tj)	6.3mOhm @ 22A, 10V	2V @ 9µA	13nC @ 10V	775pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
FF11MR12W2M1HPB11BPSA1	Infineon Technologies	MOSFET 1200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고54	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-
FF8MR12W1M1HB11BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FS03MR12A6MA1BBPSA1	Infineon Technologies	SIC 6N-CH 1200V AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	패키지: -	Request a Quote	-	1200V (1.2kV)	400A (Tj)	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42500pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-2
F3L8MR12W2M1HPB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 85A AG-EASY2B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 85A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V Vgs(th) (Max) @ Id: 5.15V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	패키지: -	재고135	-	1200V (1.2kV)	85A (Tj)	12mOhm @ 100A, 18V	5.15V @ 40mA	297nC @ 18V	8800pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY2B
FF4MR12KM1HP	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IPG20N06S4L11ATMA2	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: -	재고128,976	Logic Level Gate	60V	20A (Tc)	11.2mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
DF11MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고120	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
DF14MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	패키지: -	재고72	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
IAUC45N04S6N070HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 45A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Power - Max: 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	패키지: -	재고60,237	-	40V	45A (Tj)	7mOhm @ 22A, 10V	3V @ 9µA	12nC @ 10V	701pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
IPG20N06S2L65AAUMA1	Infineon Technologies	MOSFET 2N-CH 55V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Power - Max: 43W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: -	Request a Quote	Logic Level Gate	55V	20A (Tc)	65mOhm @ 15A, 10V	2V @ 14µA	12nC @ 10V	410pF @ 25V	43W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
IRFI4212H-117PXKMA1	Infineon Technologies	MOSFET 2N-CH 100V 11A TO220-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V Power - Max: 18W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack, Formed Leads Supplier Device Package: TO-220-5 Full-Pak	패키지: -	재고2,817	-	100V	11A (Tc)	72.5mOhm @ 6.6A, 10V	5V @ 250µA	18nC @ 10V	490pF @ 50V	18W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack, Formed Leads	TO-220-5 Full-Pak
FF1MR12KM1HP	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF7331TRPBF-1	Infineon Technologies	MOSFET 2N-CH 20V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	20V	7A (Ta)	30mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRFI4019H-117PXKMA1	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO220-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack, Formed Leads Supplier Device Package: TO-220-5 Full-Pak	패키지: -	재고2,523	-	150V	8.7A (Tc)	95mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack, Formed Leads	TO-220-5 Full-Pak
FF2MR12KM1HOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	패키지: -	재고30	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
FF6MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고60	-	-	-	-	-	-	-	-	-	-	-	-
FS05MR12A6MA1BBPSA1	Infineon Technologies	SIC 1200V 200A AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	패키지: -	재고30	-	1200V (1.2kV)	200A	-	-	-	-	-	-	Chassis Mount	Module	AG-HYBRIDD-2

IAUC60N04S6N031HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-56

패키지: -

재고28,929

-

40V

60A (Tj)

3.1mOhm @ 30A, 10V

3V @ 25µA

30nC @ 10V

1922pF @ 25V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-56

IPG20N04S4L18AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Power - Max: 26W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: -

재고14,310

-

40V

20A (Tc)

18mOhm @ 17A, 10V

2.2V @ 8µA

15nC @ 10V

1071pF @ 25V

26W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

IRF7307QTRPBF

Infineon Technologies

MOSFET N/P-CH 20V 5.2A/4.3A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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Logic Level Gate

20V

5.2A, 4.3A

50mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7341QTRPBF

Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Power - Max: 2.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: -

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Logic Level Gate

55V

5.1A

50mOhm @ 5.1A, 10V

1V @ 250µA (Min)

44nC @ 10V

780pF @ 25V

2.4W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSO220N03MDGXUMA1

Infineon Technologies

MOSFET 2N-CH 30V 6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: -

재고45,426

Logic Level Gate

30V

6A

22mOhm @ 7.7A, 10V

2.1V @ 250µA

10nC @ 10V

800pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

F445MR12W1M1B76BPSA1

Infineon Technologies

SIC 4N-CH 1200V 25A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

패키지: -

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-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

IQE220N15NM5SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: PG-WHSON-8

패키지: -

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-

150V

-

Surface Mount

8-PowerWDFN

PG-WHSON-8

FF11MR12W1M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

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-

1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B

64-2013PBF

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF11MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

패키지: -

Request a Quote

-

1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

IAUC45N04S6L063HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 45A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 9µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Power - Max: 41W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

패키지: -

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Logic Level Gate

40V

45A (Tj)

6.3mOhm @ 22A, 10V

2V @ 9µA

13nC @ 10V

775pF @ 25V

41W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57

FF11MR12W2M1HPB11BPSA1

Infineon Technologies

MOSFET 1200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고54

-

1200V (1.2kV)

-

FF8MR12W1M1HB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

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-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

FS03MR12A6MA1BBPSA1

Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

패키지: -

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-

1200V (1.2kV)

400A (Tj)

3.7mOhm @ 400A, 15V

5.55V @ 240mA

1320nC @ 15V

42500pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-HYBRIDD-2

F3L8MR12W2M1HPB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 85A AG-EASY2B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

패키지: -

재고135

-

1200V (1.2kV)

85A (Tj)

12mOhm @ 100A, 18V

5.15V @ 40mA

297nC @ 18V

8800pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY2B

FF4MR12KM1HP

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IPG20N06S4L11ATMA2

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: -

재고128,976

Logic Level Gate

60V

20A (Tc)

11.2mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

DF11MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고120

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

DF14MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

패키지: -

재고72

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

IAUC45N04S6N070HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 45A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Power - Max: 41W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

패키지: -

재고60,237

-

40V

45A (Tj)

7mOhm @ 22A, 10V

3V @ 9µA

12nC @ 10V

701pF @ 25V

41W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57

IPG20N06S2L65AAUMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Power - Max: 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: -

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Logic Level Gate

55V

20A (Tc)

65mOhm @ 15A, 10V

2V @ 14µA

12nC @ 10V

410pF @ 25V

43W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

IRFI4212H-117PXKMA1

Infineon Technologies

MOSFET 2N-CH 100V 11A TO220-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Power - Max: 18W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Supplier Device Package: TO-220-5 Full-Pak

패키지: -

재고2,817

-

100V

11A (Tc)

72.5mOhm @ 6.6A, 10V

5V @ 250µA

18nC @ 10V

490pF @ 50V

18W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack, Formed Leads

TO-220-5 Full-Pak

FF1MR12KM1HP

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRF7331TRPBF-1

Infineon Technologies

MOSFET 2N-CH 20V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

-

20V

7A (Ta)

30mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRFI4019H-117PXKMA1

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO220-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Supplier Device Package: TO-220-5 Full-Pak

패키지: -

재고2,523

-

150V

8.7A (Tc)

95mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack, Formed Leads

TO-220-5 Full-Pak

FF2MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

패키지: -

재고30

-

1200V (1.2kV)

500A (Tc)

2.13mOhm @ 500A, 15V

5.15V @ 224mA

1340nC @ 15V

39700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

FF6MR12KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고60

-

FS05MR12A6MA1BBPSA1

Infineon Technologies

SIC 1200V 200A AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

패키지: -

재고30

-

1200V (1.2kV)

200A

-

Chassis Mount

Module

AG-HYBRIDD-2