페이지 19 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈

기록 1,314
페이지  19/47
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제조업체
설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FP20R06YE3B4BOMA1
Infineon Technologies

MOD IGBT LOW PWR EASY2-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FF1000R17IE4DB2BOSA1
Infineon Technologies

IGBT MODULE 1700V 6250W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 6250 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고6
2 Independent
1700 V
-
6250 W
2.45V @ 15V, 1000A
5 mA
81 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP15R12W1T7PB3BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FF1200R12KE3NOSA1
Infineon Technologies

IGBT MODULE 1200V 5000W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 5000 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 86 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
-
5000 W
2.15V @ 15V, 1200A
5 mA
86 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FF650R17IE4PBOSA1
Infineon Technologies

IGBT MODULE 1700V 650A

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 650 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
650 A
-
2.45V @ 15V, 650A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FD800R45KL3KB5NPSA1
Infineon Technologies

IGBT MOD 4500V 800A 9000W

  • IGBT Type: -
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 800 A
  • Power - Max: 9000 W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 185 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고3
Single Chopper
4500 V
800 A
9000 W
2.85V @ 15V, 800A
5 mA
185 nF @ 25 V
Standard
No
-50°C ~ 125°C
Chassis Mount
Module
Module
FS50R12W2T7BPSA1
Infineon Technologies

LOW POWER EASY AG-EASY2B-711

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 7.9 µA
  • Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B
패키지: -
재고45
Three Phase Inverter
1200 V
50 A
20 mW
-
7.9 µA
11.1 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY2B
FF1400R17IP4BOSA1
Infineon Technologies

IGBT MODULE 1700V 1400A

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1400 A
  • Power - Max: 955000 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
1400 A
955000 W
2.2V @ 15V, 1400A
5 mA
110 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS25R12W1T7PB11BPSA1
Infineon Technologies

LOW POWER EASY AG-EASY1B-2

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 5.6 µA
  • Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고27
Three Phase Inverter
1200 V
25 A
20 mW
-
5.6 µA
4.77 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
CHOPPERKIT4IHM30694NOSA1
Infineon Technologies

IGBT MODULE CHOPPER KIT A-PSAO-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FD1000R17IE4BOSA2
Infineon Technologies

IGBT MODULE 1700V 6250W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 6250 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1700 V
-
6250 W
2.45V @ 15V, 1000A
5 mA
81 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF400R12KT4PBOSA1
Infineon Technologies

FF400R12KT4P - 1200 V, 400 A DUA

  • IGBT Type: Trench Field Stop
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
패키지: -
Request a Quote
Dual, Common Source
1200 V
400 A
-
2.05V @ 15V, 400A
5 mA
28000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MMHB
FF450R12IE4BOSA2
Infineon Technologies

IGBT MOD 1200V 450A 2550W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 2550 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 450A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
450 A
2550 W
2.05V @ 15V, 450A
5 mA
27 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R17KE4HOSA1
Infineon Technologies

IGBT MOD 1700V 440A 1800W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 440 A
  • Power - Max: 1800 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고24
2 Independent
1700 V
440 A
1800 W
2.3V @ 15V, 300A
1 mA
24.5 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FB30R06W1E3BOMA1
Infineon Technologies

IGBT MODULE 600V 39A 115W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 39 A
  • Power - Max: 115 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고72
Three Phase Inverter
600 V
39 A
115 W
2V @ 15V, 30A
1 mA
1.65 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP10R12W1T4B29BOMA1
Infineon Technologies

IGBT MODULE VCES 600V 100A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고72
-
-
-
-
-
-
-
-
-
-
-
-
-
DDB6U75N16W1RB11BOMA1
Infineon Technologies

IGBT MOD 1200V 69A 335W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 69 A
  • Power - Max: 335 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
69 A
335 W
2.15V @ 15V, 50A
1 mA
2.8 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP100R12N3T7B11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3B-711

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6
Three Phase Inverter
1200 V
100 A
-
-
-
-
Standard
No
-
-
-
-
FP100R12KT4PBPSA1
Infineon Technologies

MOD IGBT LOW PWR ECONO3-3

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FF450R33T3E3B5P2BPSA1
Infineon Technologies

IHV IHM T XHP 3 3-6 5K

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 1000000 W
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-XHP100-6
패키지: -
Request a Quote
2 Independent
3300 V
450 A
1000000 W
2.75V @ 15V, 450A
5 mA
84 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-XHP100-6
F3L75R07W2E3B11BOMA1
Infineon Technologies

IGBT MODULE 650V 95A 250W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Power - Max: 250 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고36
Three Phase Inverter
650 V
95 A
250 W
1.9V @ 15V, 75A
1 mA
4.6 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FZ1400R33HE4BPSA1
Infineon Technologies

IGBT MODULE DIODE HVB130-3

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
3300 V
1400 A
-
2.3V @ 15V, 1400A (Typ)
5 mA
187 nF @ 25 V
Single Phase Bridge Rectifier
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
F1225R12KT4GBOSA1
Infineon Technologies

IGBT MOD 1200V 25A 160W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 160 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고24
Three Phase Inverter
1200 V
25 A
160 W
2.15V @ 15V, 25A
1 mA
1.45 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FS200R12KT4RB11BOSA1
Infineon Technologies

IGBT MOD 1200V 280A 1000W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 280 A
  • Power - Max: 1000 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고33
Three Phase Inverter
1200 V
280 A
1000 W
2.15V @ 15V, 200A
1 mA
14 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FZ1000R33HL3BPSA1
Infineon Technologies

IGBT MOD 3300V 1000A 1600W

  • IGBT Type: Trench Field Stop
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1000 A
  • Power - Max: 1600 W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Switch
3300 V
1000 A
1600 W
2.85V @ 15V, 1000A
5 mA
190 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R12ME4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 600A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
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Half Bridge
1200 V
600 A
20 mW
2.1V @ 15V, 300A
3 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS950R08A6P2LBBPSA1
Infineon Technologies

HYBRID PACK DRIVE AG-HYBRIDD-1

  • IGBT Type: Trench Field Stop
  • Configuration: 3 Independent
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 870 W
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
패키지: -
재고18
3 Independent
750 V
450 A
870 W
1.35V @ 15V, 450A
1 mA
80 nF @ 50 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-HYBRIDD-2
FP35R12KT4B16BOSA1
Infineon Technologies

IGBT MOD 1200V 70A 210W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 210 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
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Three Phase Inverter
1200 V
70 A
210 W
2.25V @ 15V, 35A
1 mA
2 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module