페이지 22 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈

기록 1,314
페이지  22/47
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DF300R07PE4B6BOSA1
Infineon Technologies

IGBT MOD 650V 300A 940W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 940 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
650 V
300 A
940 W
1.95V @ 15V, 300A
1 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS900R08A2P2B32BOSA1
Infineon Technologies

IGBT MODULE PACK2 DRV HYBRID2-1

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 550 A
  • Power - Max: 1546 W
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRID2-1
패키지: -
Request a Quote
Three Phase Inverter
750 V
550 A
1546 W
1.25V @ 15V, 550A
500 µA
105 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-HYBRID2-1
IFF600B12ME4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 600A 40W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 40 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Half Bridge
1200 V
600 A
40 W
2.1V @ 15V, 600A
3 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FS75R12KT4PB11BPSA1
Infineon Technologies

IGBT MODULE LOW PWR ECONO2-6

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고30
-
-
-
-
-
-
-
-
-
-
-
-
-
FS150R07N3E4BOSA1
Infineon Technologies

IGBT MOD 650V 150A 430W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 430 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Three Phase Inverter
650 V
150 A
430 W
1.95V @ 15V, 150A
1 mA
9.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
BSM50GP60BOSA1
Infineon Technologies

IGBT MODULE 600V 70A 250W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 250 W
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
600 V
70 A
250 W
2.75V @ 15V, 25A
500 µA
1.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FS75R12KT4B11BOSA1
Infineon Technologies

IGBT MOD 1200V 75A 385W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 385 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
75 A
385 W
2.15V @ 15V, 75A
1 mA
4.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
IFF2400P17AE4BPSA1
Infineon Technologies

IGBT MODULE 1700V IPM MIPAQP-4

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 65°C (TA)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1700 V
-
-
-
-
-
-
No
-40°C ~ 65°C (TA)
-
Module
Module
FF800R12KE7EHPSA1
Infineon Technologies

MEDIUM POWER 62MM

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 800 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 800A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
패키지: -
재고30
Half Bridge Inverter
1200 V
800 A
-
1.75V @ 15V, 800A
100 µA
122 nF @ 25 V
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-62MMHB
FD900R12IP4DBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 5100W

  • IGBT Type: -
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 5100 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Chopper
1200 V
900 A
5100 W
2.05V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP25R12KE3BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Power - Max: 155 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2-8
패키지: -
재고27
Three Phase Inverter
1200 V
40 A
155 W
2.15V @ 15V, 25A
1 mA
1.8 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
AG-ECONO2-8
F3L300R12MT4B22BOSA1
Infineon Technologies

IGBT MOD 1200V 450A 1550W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 1550 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge Inverter
1200 V
450 A
1550 W
2.1V @ 15V, 300A
1 mA
19 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
DDB6U50N16W1RBPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
  • Current - Collector Cutoff (Max): 6.2 µA
  • Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고72
Single Chopper
1200 V
50 A
-
1.5V @ 15V, 50A
6.2 µA
11.1 nF @ 25 V
Three Phase Bridge Rectifier
No
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
FF900R12IP4DVBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 5100W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 5100 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
900 A
5100 W
2.05V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
DD800S17K3B2NOSA1
Infineon Technologies

DD800S17 - IGBT MODULE

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
IFF300B17N2E4PB11BPSA1
Infineon Technologies

IGBT MOD 1700V 400A 1500W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 1500 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1700 V
400 A
1500 W
2.3V @ 15V, 300A
1 mA
27 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF600R12KF4NOSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 3900 W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
  • Current - Collector Cutoff (Max): 8 mA
  • Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
2 Independent
1200 V
600 A
3900 W
3.2V @ 15V, 600A
8 mA
45 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
-
BSM25GP120BOSA1
Infineon Technologies

IGBT MOD 1200V 45A 230W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 45 A
  • Power - Max: 230 W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
  • Current - Collector Cutoff (Max): 20 A
  • Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
45 A
230 W
2.55V @ 15V, 25A
20 A
1.5 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
2PS12017E34W32132NOSA1
Infineon Technologies

MODULE IGBT STACK A-PS4-1

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -25°C ~ 55°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
-
-
-
-
-
-
Standard
No
-25°C ~ 55°C
Chassis Mount
Module
Module
FP75R07N2E4BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고27
Three Phase Inverter
650 V
95 A
20 mW
1.95V @ 15V, 75A
1 mA
4.6 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
IFS100B12N3E4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 150A 515W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고12
Full Bridge
1200 V
150 A
515 W
2.1V @ 15V, 100A
1 mA
6.2 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM150GB120DLCHOSA1
Infineon Technologies

IGBT MOD 1200V 300A 1250W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 1250 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
300 A
1250 W
2.6V @ 15V, 150A
5 mA
11 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
F3L100R12W2H3B11BPSA1
Infineon Technologies

IGBT MOD 1200V 100A 375W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 375 W
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
100 A
375 W
1.75V @ 15V, 50A
1 mA
6.15 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF400R17KE4HOSA1
Infineon Technologies

IGBT MODULE 1700V 400A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고48
Half Bridge
1700 V
400 A
-
2.3V @ 15V, 400A
1 mA
36 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R06KE3HOSA1
Infineon Technologies

IGBT MOD 600V 400A 940W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 940 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
600 V
400 A
940 W
1.9V @ 15V, 300A
5 mA
19 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM25GB120DN2
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Power - Max: 200 W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
  • Current - Collector Cutoff (Max): 800 µA
  • Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Half Bridge
1200 V
38 A
200 W
3V @ 15V, 25A
800 µA
1.65 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
Module
FZ1600R12KF4S1NOSA1
Infineon Technologies

IGBT MODULE 1200V AIHM130-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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FS450R07A2P2B31BOSA1
Infineon Technologies

IGBT MODULE PACK DRV HYBRIDD-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
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-
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