페이지 20 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSM50GD120DLCBPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2A-211 IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 85 A Power - Max: 350 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2A	패키지: -	Request a Quote	Full Bridge Inverter	1200 V	85 A	350 W	2.6V @ 15V, 50A	84 µA	3.3 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	AG-ECONO2A
FS28MR12W1M1HB70BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고72	-	-	-	-	-	-	-	-	-	-	-	-	-
F4200R17N3E4BPSA1	Infineon Technologies	IGBT MOD 1700V 200A 20MW IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 200 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	Full Bridge	1700 V	200 A	20 mW	2.3V @ 15V, 200A	1 mA	18 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
BSM200GA120DN2HOSA1	Infineon Technologies	IGBT MOD 1200V 300A 1550W IGBT Type: - Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 300 A Power - Max: 1550 W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single Switch	1200 V	300 A	1550 W	3V @ 15V, 200A	4 mA	13 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	Module
FS300R12OE4BOSA1	Infineon Technologies	IGBT MOD 1200V 460A 1650W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 460 A Power - Max: 1650 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	460 A	1650 W	2.1V @ 15V, 300A	3 mA	18.5 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FS150R12N2T7B15BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	패키지: -	재고39	Full Bridge Inverter	1200 V	150 A	20 mW	1.8V @ 15V, 150A	12 µA	30.1 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-ECONO2B
FF600R12KE4EBOSA2	Infineon Technologies	FF600R12KE4_E - 1200 V, 600 A CO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FF600R12KE4EBOSA1	Infineon Technologies	IGBT MODULE 1200V 600A IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 38 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	Half Bridge	1200 V	600 A	-	2.2V @ 15V, 600A	5 mA	38 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FS200R12PT4BOSA1	Infineon Technologies	IGBT MOD 1200V 280A 1000W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 280 A Power - Max: 1000 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고72	Three Phase Inverter	1200 V	280 A	1000 W	2.15V @ 15V, 200A	1 mA	14 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FF900R12IE4VPBOSA1	Infineon Technologies	IGBT MOD 1200V 900A 20MW IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1200 V	900 A	20 mW	2.1V @ 15V, 900A	5 mA	54 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FP35R12W2T4PBPSA1	Infineon Technologies	FP35R12 - IGBT MODULE IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FS200R12KT4RPBPSA1	Infineon Technologies	IGBT MODULE LOW PWR ECONO3-4 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM100GD60DLCBOSA1	Infineon Technologies	IGBT MOD 600V 130A 430W IGBT Type: - Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 130 A Power - Max: 430 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Full Bridge	600 V	130 A	430 W	2.45V @ 15V, 100A	500 µA	4.3 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
FS50R06YL4BOMA1	Infineon Technologies	IGBT MODULE 600V 55A 202W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 55 A Power - Max: 202 W Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 200 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	600 V	55 A	202 W	2.55V @ 15V, 50A	5 mA	200 pF @ 25 V	Standard	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
FP75R12W3T7B11BPSA1	Infineon Technologies	LOW POWER EASY AG-EASY3B-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고24	-	-	-	-	-	-	-	-	-	-	-	-	-
FS200R12N3T4RB81BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-4 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고30	-	-	-	-	-	-	-	-	-	-	-	-	-
FF800R12KE3NOSA1	Infineon Technologies	IGBT MOD 1200V 1200A 3900W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 1200 A Power - Max: 3900 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 57 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	1200 A	3900 W	2.15V @ 15V, 800A	5 mA	57 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
BSM100GB120DN2HOSA1	Infineon Technologies	IGBT MOD 1200V 150A 800W IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 800 W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1200 V	150 A	800 W	3V @ 15V, 100A	2 mA	6.5 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	Module
F3L200R07W2S5FPB56BPSA1	Infineon Technologies	LOW POWER EASY AG-EASY2B-2 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고36	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM30GD60DLCBOSA1	Infineon Technologies	IGBT MODULE 600V 40A 135W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Power - Max: 135 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	600 V	40 A	135 W	2.45V @ 15V, 30A	500 µA	1.3 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
BSM50GD120DLCBOSA1	Infineon Technologies	IGBT MOD 1200V 85A 350W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 85 A Power - Max: 350 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	85 A	350 W	2.6V @ 15V, 50A	84 µA	3.3 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
FS225R12OE4BOSA1	Infineon Technologies	IGBT MOD 1200V 350A 1250W IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 350 A Power - Max: 1250 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고9	Full Bridge Inverter	1200 V	350 A	1250 W	2.15V @ 15V, 225A	3 mA	13 nF @ 25 V	Standard	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
2ED300C17SROHSBPSA1	Infineon Technologies	IGBT MODULE 1700V 30A IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -25°C ~ 85°C Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge	1700 V	-	-	-	-	-	Standard	No	-25°C ~ 85°C	Through Hole	Module	Module
FP50R12N2T7PBPSA1	Infineon Technologies	1200 V, 50 A PIM IGBT MODULE IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A Current - Collector Cutoff (Max): 4 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	패키지: -	재고30	Three Phase Inverter	1200 V	50 A	20 mW	1.85V @ 15V, 25A	4 µA	11.1 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-ECONO2B
BSM20GD60DLCE3224	Infineon Technologies	IGBT MODULE IGBT Type: - Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 32 A Power - Max: 125 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2A	패키지: -	Request a Quote	Full Bridge	600 V	32 A	125 W	2.45V @ 15V, 20A	500 µA	1.1 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	AG-ECONO2A
FP150R12N3T4PB81BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FF900R12ME7B11NPSA1	Infineon Technologies	MEDIUM POWER ECONO IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONOD-3	패키지: -	재고18	2 Independent	1200 V	900 A	20 mW	1.8V @ 15V, 900A	100 µA	122 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-ECONOD-3
FZ1200R17HE4PHPSA1	Infineon Technologies	IGBT MODULE 1700V 1200A IGBT Type: Trench Field Stop Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1200 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 97 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single Switch	1700 V	1200 A	-	2.3V @ 15V, 1200A	5 mA	97 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module

BSM50GD120DLCBPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2A-211

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 85 A
Power - Max: 350 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2A

패키지: -

Request a Quote

Full Bridge Inverter

1200 V

85 A

350 W

2.6V @ 15V, 50A

84 µA

3.3 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

AG-ECONO2A

FS28MR12W1M1HB70BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고72

-

F4200R17N3E4BPSA1

Infineon Technologies

IGBT MOD 1700V 200A 20MW

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

Full Bridge

1700 V

200 A

20 mW

2.3V @ 15V, 200A

1 mA

18 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

BSM200GA120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 300A 1550W

IGBT Type: -
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Power - Max: 1550 W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single Switch

1200 V

300 A

1550 W

3V @ 15V, 200A

4 mA

13 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

FS300R12OE4BOSA1

Infineon Technologies

IGBT MOD 1200V 460A 1650W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 460 A
Power - Max: 1650 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

460 A

1650 W

2.1V @ 15V, 300A

3 mA

18.5 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FS150R12N2T7B15BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

패키지: -

재고39

Full Bridge Inverter

1200 V

150 A

20 mW

1.8V @ 15V, 150A

12 µA

30.1 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-ECONO2B

FF600R12KE4EBOSA2

Infineon Technologies

FF600R12KE4_E - 1200 V, 600 A CO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF600R12KE4EBOSA1

Infineon Technologies

IGBT MODULE 1200V 600A

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

Half Bridge

1200 V

600 A

-

2.2V @ 15V, 600A

5 mA

38 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FS200R12PT4BOSA1

Infineon Technologies

IGBT MOD 1200V 280A 1000W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 280 A
Power - Max: 1000 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고72

Three Phase Inverter

1200 V

280 A

1000 W

2.15V @ 15V, 200A

1 mA

14 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FF900R12IE4VPBOSA1

Infineon Technologies

IGBT MOD 1200V 900A 20MW

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1200 V

900 A

20 mW

2.1V @ 15V, 900A

5 mA

54 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FP35R12W2T4PBPSA1

Infineon Technologies

FP35R12 - IGBT MODULE

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS200R12KT4RPBPSA1

Infineon Technologies

IGBT MODULE LOW PWR ECONO3-4

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BSM100GD60DLCBOSA1

Infineon Technologies

IGBT MOD 600V 130A 430W

IGBT Type: -
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Power - Max: 430 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Full Bridge

600 V

130 A

430 W

2.45V @ 15V, 100A

500 µA

4.3 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

FS50R06YL4BOMA1

Infineon Technologies

IGBT MODULE 600V 55A 202W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 55 A
Power - Max: 202 W
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 200 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

600 V

55 A

202 W

2.55V @ 15V, 50A

5 mA

200 pF @ 25 V

Standard

Yes

-40°C ~ 125°C

Chassis Mount

Module

FP75R12W3T7B11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY3B-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고24

-

FS200R12N3T4RB81BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-4

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고30

-

FF800R12KE3NOSA1

Infineon Technologies

IGBT MOD 1200V 1200A 3900W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1200 A
Power - Max: 3900 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 57 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

1200 V

1200 A

3900 W

2.15V @ 15V, 800A

5 mA

57 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

BSM100GB120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 150A 800W

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 800 W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1200 V

150 A

800 W

3V @ 15V, 100A

2 mA

6.5 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

F3L200R07W2S5FPB56BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY2B-2

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고36

-

BSM30GD60DLCBOSA1

Infineon Technologies

IGBT MODULE 600V 40A 135W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Power - Max: 135 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

600 V

40 A

135 W

2.45V @ 15V, 30A

500 µA

1.3 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

BSM50GD120DLCBOSA1

Infineon Technologies

IGBT MOD 1200V 85A 350W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 85 A
Power - Max: 350 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

85 A

350 W

2.6V @ 15V, 50A

84 µA

3.3 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

FS225R12OE4BOSA1

Infineon Technologies

IGBT MOD 1200V 350A 1250W

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 350 A
Power - Max: 1250 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고9

Full Bridge Inverter

1200 V

350 A

1250 W

2.15V @ 15V, 225A

3 mA

13 nF @ 25 V

Standard

Yes

-40°C ~ 125°C

Chassis Mount

Module

2ED300C17SROHSBPSA1

Infineon Technologies

IGBT MODULE 1700V 30A

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge

1700 V

-

Standard

No

-25°C ~ 85°C

Through Hole

Module

FP50R12N2T7PBPSA1

Infineon Technologies

1200 V, 50 A PIM IGBT MODULE

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
Current - Collector Cutoff (Max): 4 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

패키지: -

재고30

Three Phase Inverter

1200 V

50 A

20 mW

1.85V @ 15V, 25A

4 µA

11.1 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-ECONO2B

BSM20GD60DLCE3224

Infineon Technologies

IGBT MODULE

IGBT Type: -
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 32 A
Power - Max: 125 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2A

패키지: -

Request a Quote

Full Bridge

600 V

32 A

125 W

2.45V @ 15V, 20A

500 µA

1.1 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

AG-ECONO2A

FP150R12N3T4PB81BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF900R12ME7B11NPSA1

Infineon Technologies

MEDIUM POWER ECONO

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONOD-3

패키지: -

재고18

2 Independent

1200 V

900 A

20 mW

1.8V @ 15V, 900A

100 µA

122 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-ECONOD-3

FZ1200R17HE4PHPSA1

Infineon Technologies

IGBT MODULE 1700V 1200A

IGBT Type: Trench Field Stop
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single Switch

1700 V

1200 A

-

2.3V @ 15V, 1200A

5 mA

97 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module