페이지 10 - IXYS 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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IXYS 제품 - 다이오드 - 정류기 - 단일

기록 504
페이지  10/18
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DSEP12-12B
IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.25V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고5,632
1200V
15A
3.25V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot DSI30-16A
IXYS

DIODE GEN PURP 1.6KV 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-220-2
재고5,776
1600V
30A
1.29V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 1600V
10pF @ 400V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
DHG10I1200PM
IXYS

DIODE GEN PURP 1.2KV 10A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.69V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 15µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고6,336
1200V
10A
2.69V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
15µA @ 1200V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FPAC
-55°C ~ 150°C
hot DSI30-12A
IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-220-2
재고8,940
1200V
30A
1.29V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 1200V
10pF @ 400V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot DSEI12-10A
IXYS

DIODE GEN PURP 1KV 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-220-2
재고9,828
1000V
12A
2.7V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
250µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
hot DSEP8-12A
IXYS

DIODE GEN PURP 1.2KV 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 60µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고50,520
1200V
10A
2.94V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
60µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
DFE10I600PM
IXYS

DIODE GEN PURP 600V 10A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고7,032
600V
10A
1.5V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220ACFP
-55°C ~ 150°C
hot DSEI8-06A
IXYS

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-220-2
재고156,948
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
MDO500-12N1
IXYS

DIODE MODULE 1.2KV 560A Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 560A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 1200V
  • Capacitance @ Vr, F: 762pF @ 400V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
패키지: Y1-CU
재고5,696
1200V
560A
1.3V @ 1200A
Standard Recovery >500ns, > 200mA (Io)
-
30mA @ 1200V
762pF @ 400V, 1MHz
Chassis Mount
Y1-CU
Y1-CU
-
DSA17-16A
IXYS

DIODE AVALANCHE 1.6KV 25A DO203

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: DO-203AA, DO-4, Stud
재고5,664
1600V
25A
1.36V @ 55A
Standard Recovery >500ns, > 200mA (Io)
-
4mA @ 1600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-40°C ~ 180°C
hot DSEP60-12A
IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 650µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고7,536
1200V
60A
2.66V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
650µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
hot DSEP12-12A
IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.75V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고46,500
1200V
15A
2.75V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
100µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot DSI30-08A
IXYS

DIODE GEN PURP 800V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-220-2
재고6,288
800V
30A
1.29V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 800V
10pF @ 400V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
hot DSEI12-06A
IXYS

DIODE GEN PURP 600V 14A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-220-2
재고31,704
600V
14A
1.7V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
MDO500-22N1
IXYS

DIODE MODULE 2.2KV 560A Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 560A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 2200V
  • Capacitance @ Vr, F: 576pF @ 700V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
패키지: Y1-CU
재고5,072
2200V
560A
1.3V @ 1200A
Standard Recovery >500ns, > 200mA (Io)
-
30mA @ 2200V
576pF @ 700V, 1MHz
Chassis Mount
Y1-CU
Y1-CU
-
MEO550-02DA
IXYS

DIODE MODULE 200V 582A Y4-M6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 582A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 520A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
  • Supplier Device Package: Y4-M6
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: Y4-M6
재고5,424
200V
582A
1.25V @ 520A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5mA @ 200V
-
Chassis Mount
Y4-M6
Y4-M6
-40°C ~ 150°C
UGE1112AY4
IXYS

DIODE MODULE 8KV 4.2A UGE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 8000V
  • Current - Average Rectified (Io): 4.2A
  • Voltage - Forward (Vf) (Max) @ If: 6.25V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 8000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: UGE
  • Supplier Device Package: UGE
  • Operating Temperature - Junction: -
패키지: UGE
재고6,300
8000V
4.2A
6.25V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
1mA @ 8000V
-
Chassis Mount
UGE
UGE
-
DPG60I300HA
IXYS

DIODE GEN PURP 300V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고19,008
300V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 300V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
hot DSEP6-06AS
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.02V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고60,000
600V
6A
2.02V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-40°C ~ 175°C
DNA30E2200PZ
IXYS

DIODE RECT 2200V 30A D2PAK-HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 2200V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,916
2200V
30A
1.26V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 2200V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C
DSAI75-16B
IXYS

DIODE AVALANCHE 1.6KV 110A DO203

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: DO-203AB, DO-5, Stud
재고17,424
1600V
110A
1.17V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1600V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 180°C
DSDI60-16A
IXYS

DIODE GEN PURP 1.6KV 63A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 63A
  • Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 2mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-2
재고8,076
1600V
63A
4.1V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
2mA @ 1600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
DSEP60-12AR
IXYS

DIODE GEN 1.2KV 60A ISOPLUS247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 650µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: ISOPLUS247?
재고6,640
1200V
60A
2.66V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
650µA @ 1200V
-
Through Hole
ISOPLUS247?
ISOPLUS247?
-55°C ~ 175°C
hot DSEP60-06A
IXYS

DIODE GEN PURP 600V 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 650µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고5,488
600V
60A
2.04V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
650µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
DSEP15-12CR
IXYS

DIODE GEN 1.2KV 15A ISOPLUS247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 4.04V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: ISOPLUS247?
재고7,380
1200V
15A
4.04V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
100µA @ 1200V
-
Through Hole
ISOPLUS247?
ISOPLUS247?
-55°C ~ 175°C
hot DSEP30-12AR
IXYS

DIODE GEN 1.2KV 30A ISOPLUS247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: ISOPLUS247?
재고3,456
1200V
30A
2.74V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
250µA @ 1200V
-
Through Hole
ISOPLUS247?
ISOPLUS247?
-55°C ~ 175°C
hot DSEP30-06A
IXYS

DIODE GEN PURP 600V 30A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고48,288
600V
30A
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
UGE3126AY4
IXYS

DIODE MODULE 24KV 2A UGE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 24000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 18V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 24000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: UGE
  • Supplier Device Package: UGE
  • Operating Temperature - Junction: -
패키지: UGE
재고6,288
24000V
2A
18V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
1mA @ 24000V
-
Chassis Mount
UGE
UGE
-