페이지 7 - IXYS 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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IXYS 제품 - 다이오드 - 정류기 - 단일

기록 504
페이지  7/18
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
W1185LC420
IXYS

DIODE GEN PURP 4.2KV 1185A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4200 V
  • Current - Average Rectified (Io): 1185A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
4200 V
1185A
2.4 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4200 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
W1185LC450
IXYS

DIODE GEN PURP 4.5KV 1185A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1185A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
4500 V
1185A
2.4 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
DSEI120-12AZ-TUB
IXYS

DIODE GP 1.2KV 109A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 109A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
1200 V
109A
1.8 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
3 mA @ 1200 V
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
-40°C ~ 150°C
DSI30-16AS-TRL
IXYS

DIODE GEN PURP 1.6KV 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고7,659
1600 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 175°C
DPG15I600APA
IXYS

PWR DIODE DISC-FRED TO-220AB / T

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
E3000EC45E
IXYS

DIODE GEN PURP 4.5KV 3410A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 3410A
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.25 µs
  • Current - Reverse Leakage @ Vr: 90 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 140°C
패키지: -
Request a Quote
4500 V
3410A
3.1 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
1.25 µs
90 mA @ 4500 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 140°C
DSEP12-12BZ-TUB
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고150
1200 V
12A
3.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DSEP12-12BZ-TRL
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
12A
3.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
W1032LC500
IXYS

DIODE GEN PURP 5KV 1032A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5000 V
  • Current - Average Rectified (Io): 1032A
  • Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 5000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
5000 V
1032A
2.7 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
30 µs
30 mA @ 5000 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 150°C
E2400EC45E
IXYS

DIODE GEN PURP 4.5KV 2490A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2490A
  • Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.22 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 140°C
패키지: -
Request a Quote
4500 V
2490A
3.65 V @ 2400 A
Standard Recovery >500ns, > 200mA (Io)
1.22 µs
100 mA @ 4500 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 140°C
W7395ED450
IXYS

DIODE GEN PURP 2.7KV 7395A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2700 V
  • Current - Average Rectified (Io): 7395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 69 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 2700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
2700 V
7395A
1.4 V @ 7000 A
Standard Recovery >500ns, > 200mA (Io)
69 µs
120 mA @ 2700 V
-
Chassis Mount
DO-200AE
W112
-40°C ~ 160°C
W7395ED480
IXYS

DIODE GEN PURP 2.88KV 7395A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2880 V
  • Current - Average Rectified (Io): 7395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 69 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 2880 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
2880 V
7395A
1.4 V @ 7000 A
Standard Recovery >500ns, > 200mA (Io)
69 µs
120 mA @ 2880 V
-
Chassis Mount
DO-200AE
W112
-40°C ~ 160°C
W6360EC600
IXYS

DIODE GEN PURP 6KV 6395A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000 V
  • Current - Average Rectified (Io): 6395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 73 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
6000 V
6395A
1.4 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
73 µs
120 mA @ 6000 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 150°C
W1263YC250
IXYS

DIODE GEN PURP 2.5KV 1263A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고6
2500 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 2500 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 175°C
W1263YC200
IXYS

DIODE GEN PURP 2KV 1263A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
2000 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 2000 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 175°C
W1263YC160
IXYS

DIODE GEN PURP 1.6KV 1263A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고33
1600 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 1600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 175°C
DAA10EM1800PZ-TRL
IXYS

DIODE AVAL 1.8KV 10A TO263HV

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1800 V
10A
1.21 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DAA10EM1800PZ-TUB
IXYS

DIODE AVAL 1.8KV 10A TO263HV

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1800 V
10A
1.21 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
W1411LC360
IXYS

DIODE GEN PURP 3.6KV 1411A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1411A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
3600 V
1411A
2 V @ 2870 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3600 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
W1411LC320
IXYS

DIODE GEN PURP 3.2KV 1411A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3200 V
  • Current - Average Rectified (Io): 1411A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
3200 V
1411A
2 V @ 2870 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3200 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
M0659LC450
IXYS

DIODE GEN PURP 4.5KV 659A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 659A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 1400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4.2 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
4500 V
659A
3 V @ 1400 A
Standard Recovery >500ns, > 200mA (Io)
4.2 µs
100 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
DPG30I600AHA
IXYS

POWER DIODE DISCRETES-FRED TO-24

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
E1250HC45E
IXYS

DIODE GEN PURP 4.5KV 1355A W122

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1355A
  • Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W122
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
4500 V
1355A
2.07 V @ 1250 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
1 mA @ 4500 V
-
Chassis Mount
DO-200AD
W122
-
DMA50P1200HB
IXYS

DIODE GEN PURP 1.2KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
19pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
W0642WC200
IXYS

DIODE GEN PURP 2KV 642A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 642A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 µs
  • Current - Reverse Leakage @ Vr: 15 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
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2000 V
642A
2.37 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
15 µs
15 mA @ 2000 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 180°C
W0642WC160
IXYS

DIODE GEN PURP 1.6KV 642A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 642A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 µs
  • Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
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1600 V
642A
2.37 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
15 µs
15 mA @ 1600 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 180°C
M0859LC140
IXYS

DIODE GEN PURP 1.4KV 859A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 859A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
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1400 V
859A
1.7 V @ 1750 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
50 mA @ 1400 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
M0437WC140
IXYS

DIODE GEN PURP 1.4KV 437A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 437A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
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1400 V
437A
1.47 V @ 635 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C