페이지 8 - IXYS 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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IXYS 제품 - 다이오드 - 정류기 - 단일

기록 504
페이지  8/18
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DMA10P1600UZ-TUB
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1600 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1600 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10P1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1600 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1600 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
M0759YC120
IXYS

DIODE GEN PURP 1.2KV 759A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 759A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
1200 V
759A
1.7 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
50 mA @ 1200 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 125°C
M0759YC160
IXYS

DIODE GEN PURP 1.6KV 759A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 759A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
1600 V
759A
1.7 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
50 mA @ 1600 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 125°C
DSEP29-12B
IXYS

DIODE GEN PURP 1.2KV 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 12pF @ 600V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
30A
3.76 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
140 ns
100 µA @ 1200 V
12pF @ 600V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
M1022LC120
IXYS

DIODE GEN PURP 1.2KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
1200 V
1022A
1.85 V @ 2050 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
100 mA @ 1200 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
M1022LC160
IXYS

DIODE GEN PURP 1.6KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
1600 V
1022A
1.85 V @ 2050 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
100 mA @ 1600 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
DMA10P1800PZ-TUB
IXYS

DIODE GEN PURP 1.8KV 10A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1800 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DMA10P1800PZ-TRL
IXYS

DIODE GEN PURP 1.8KV 10A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1800 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DCG10P1200HR
IXYS

DIODE SCHOTT 1.2KV 12.5A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 755pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
1200 V
12.5A
1.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 1200 V
755pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
DMA30P1200HB
IXYS

DIODE GEN PURP 1.2KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 11pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
11pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
W3477MC400
IXYS

DIODE GEN PURP 4KV 3470A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 3470A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4000 V
3470A
1.34 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
38 µs
100 mA @ 4000 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
W3477MC360
IXYS

DIODE GEN PURP 3.6KV 3470A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 3470A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
3600 V
3470A
1.34 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
38 µs
100 mA @ 3600 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
DPG60IM300PC-TUB
IXYS

DIODE GEN PURP 300V 60A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 300 V
  • Capacitance @ Vr, F: 80pF @ 150V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
300 V
60A
1.43 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 300 V
80pF @ 150V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DPG60IM300PC-TRL
IXYS

DIODE GEN PURP 300V 60A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고9,669
300 V
60A
1.43 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 300 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DSEP15-06AS-TUB
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
2.04 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DSEP15-06AS-TRL
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
2.04 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DMA50P1600HB
IXYS

DIODE GEN PURP 1.6KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1600 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
19pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
DMA10IM1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1600 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10IM1600UZ-TUB
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고420
1600 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
W4767MC220
IXYS

DIODE GEN PURP 2.2KV 4755A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 4755A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
2200 V
4755A
1.05 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
26 µs
50 mA @ 2200 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 175°C
DHG40I4500KO
IXYS

DIODE GP 4.5KV 43A ISOPLUS264

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 43A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.45 µs
  • Current - Reverse Leakage @ Vr: 100 µA @ 4500 V
  • Capacitance @ Vr, F: 13pF @ 1.8kV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264™
  • Supplier Device Package: ISOPLUS264™
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
4500 V
43A
3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
1.45 µs
100 µA @ 4500 V
13pF @ 1.8kV, 1MHz
Through Hole
ISOPLUS264™
ISOPLUS264™
-40°C ~ 150°C
DSEP90-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 90A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
  • Capacitance @ Vr, F: 48pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고90
1200 V
90A
2.69 V @ 90 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
1 mA @ 1200 V
48pF @ 600V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-55°C ~ 175°C
DMA80I1600HA
IXYS

DIODE GEN PURP 1.6KV 80A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 43pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고8,064
1600 V
80A
1.17 V @ 80 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
43pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
DPF30P600HR
IXYS

DIODE GEN PURP 600V 30A ISO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 600 V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
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600 V
30A
1.62 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
500 µA @ 600 V
26pF @ 400V, 1MHz
Through Hole
TO-247-3
ISO247
-55°C ~ 175°C
DSS16-01AS-TRL
IXYS

DIODE SCHOTTKY 100V 16A TO263AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
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100 V
16A
790 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
W108CED180
IXYS

DIODE GEN PURP 1.8KV 10815A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10815A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -
패키지: -
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1800 V
10815A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
DO-200AE
W112
-
W108CED220
IXYS

DIODE GEN PURP 2.2KV 10815A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 10815A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -
패키지: -
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2200 V
10815A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
DO-200AE
W112
-