페이지 92 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53D512M16D1DS-046 WT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (512M x 16) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,064	DRAM	SDRAM - Mobile LPDDR4	8Gb (512M x 16)	-	2.133GHz	-	-	-	-30°C ~ 85°C (TC)	Surface Mount	-	-
MT40A256M16LY-062E AIT:F TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고6,320	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT29F128G08CBCEBL05B3WC1-M	Micron Technology Inc.	IC FLASH NAND 128G PARALLEL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,240	-	-	-	-	-	-	-	-	-	-	-	-
MT29F64G08CBCGBL04A3WC1	Micron Technology Inc.	IC FLASH MLC 64G DIE 8GX8 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,184	FLASH	FLASH - NAND (MLC)	64Gb (8G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29GZ5A3BPGGA-53AIT.87K	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,520	-	-	-	-	-	-	-	-	-	-	-	-
MT29GZ5A3BPGGA-53AIT.87K TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,216	-	-	-	-	-	-	-	-	-	-	-	-
MT40A256M16LY-062E IT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고6,592	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.6GHz	-	13.75ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT40A256M16LY-062E IT:F TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고5,616	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.6GHz	-	13.75ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MTFC8GACAENS-AIT TR	Micron Technology Inc.	MODULE EMMC 64G 153TFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,128	-	-	-	-	-	-	-	-	-	-	-	-
MTFC8GACAENS-5M AIT TR	Micron Technology Inc.	MODULE EMMC 64G 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,912	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MTFC8GACAEDQ-AIT TR	Micron Technology Inc.	MODULE EMMC 64G LBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,720	-	-	-	-	-	-	-	-	-	-	-	-
MT40A512M8SA-062E AIT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고7,136	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT40A512M8SA-062E AIT:F TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고7,632	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT53B128M32D1Z00NWC2 AT	Micron Technology Inc.	IC DRAM LPDDR4 8GB FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,456	-	-	-	-	-	-	-	-	-	-	-	-
MTFC4GMWDM-3M AIT A	Micron Technology Inc.	MODULE EMMC 4GB 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	패키지: 153-TFBGA	재고3,504	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC4GMWDM-3M AIT A TR	Micron Technology Inc.	MODULE EMMC 4GB 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	패키지: 153-TFBGA	재고3,120	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MT38Q40DEB10DBDXAU.Y64	Micron Technology Inc.	IC MEM DDR MULTICHIP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,008	-	-	-	-	-	-	-	-	-	-	-	-
MT38Q40DEB10DBDXAU.Y64 TR	Micron Technology Inc.	IC MEM DDR MULTICHIP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,960	-	-	-	-	-	-	-	-	-	-	-	-
MTFC4GLMDQ-AIT A	Micron Technology Inc.	MODULE EMMC 4GB 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	패키지: 100-LBGA	재고7,024	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
MTFC4GLGDQ-AIT A	Micron Technology Inc.	MODULE EMMC 4GB 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	패키지: 100-LBGA	재고5,472	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
MT53B128M32D1DS-062 IT:A	Micron Technology Inc.	IC DRAM LPDDR4 4G FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,632	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1.6GHz	-	-	1.1V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MTFC8GACAALT-4M IT	Micron Technology Inc.	MODULE EMMC 8GB 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	패키지: 100-TBGA	재고5,552	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)
MT29GZ5A5BPGGA-53AIT.87J	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,368	-	-	-	-	-	-	-	-	-	-	-	-
MT29GZ5A5BPGGA-53AIT.87J TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,192	-	-	-	-	-	-	-	-	-	-	-	-
MTFC8GACAANA-4M IT TR	Micron Technology Inc.	MODULE EMMC 8GB 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	패키지: 100-TBGA	재고6,688	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.3V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)
MTFC8GACAALT-4M IT TR	Micron Technology Inc.	MODULE EMMC 8GB 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	패키지: 100-TBGA	재고5,472	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)
MT40A512M8SA-062E IT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고6,736	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT29F256G08EBHBFJ4-3ITFES:B	Micron Technology Inc.	IC FLASH 256G PARALLEL 132VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,840	-	-	-	-	-	-	-	-	-	-	-	-

MT53D512M16D1DS-046 WT:D TR

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,064

DRAM

SDRAM - Mobile LPDDR4

8Gb (512M x 16)

-

2.133GHz

-

-30°C ~ 85°C (TC)

Surface Mount

-

MT40A256M16LY-062E AIT:F TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고6,320

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT29F128G08CBCEBL05B3WC1-M

Micron Technology Inc.

IC FLASH NAND 128G PARALLEL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,240

-

MT29F64G08CBCGBL04A3WC1

Micron Technology Inc.

IC FLASH MLC 64G DIE 8GX8

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,184

FLASH

FLASH - NAND (MLC)

64Gb (8G x 8)

Parallel

-

2.7V ~ 3.6V

0°C ~ 70°C (TA)

-

MT29GZ5A3BPGGA-53AIT.87K

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL MCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,520

-

MT29GZ5A3BPGGA-53AIT.87K TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL MCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,216

-

MT40A256M16LY-062E IT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고6,592

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.6GHz

-

13.75ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT40A256M16LY-062E IT:F TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고5,616

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.6GHz

-

13.75ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MTFC8GACAENS-AIT TR

Micron Technology Inc.

MODULE EMMC 64G 153TFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,128

-

MTFC8GACAENS-5M AIT TR

Micron Technology Inc.

MODULE EMMC 64G 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,912

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

-

MTFC8GACAEDQ-AIT TR

Micron Technology Inc.

MODULE EMMC 64G LBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,720

-

MT40A512M8SA-062E AIT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고7,136

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT40A512M8SA-062E AIT:F TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고7,632

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT53B128M32D1Z00NWC2 AT

Micron Technology Inc.

IC DRAM LPDDR4 8GB FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,456

-

MTFC4GMWDM-3M AIT A

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

패키지: 153-TFBGA

재고3,504

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC4GMWDM-3M AIT A TR

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

패키지: 153-TFBGA

재고3,120

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MT38Q40DEB10DBDXAU.Y64

Micron Technology Inc.

IC MEM DDR MULTICHIP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,008

-

MT38Q40DEB10DBDXAU.Y64 TR

Micron Technology Inc.

IC MEM DDR MULTICHIP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,960

-

MTFC4GLMDQ-AIT A

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

패키지: 100-LBGA

재고7,024

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

MTFC4GLGDQ-AIT A

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

패키지: 100-LBGA

재고5,472

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

MT53B128M32D1DS-062 IT:A

Micron Technology Inc.

IC DRAM LPDDR4 4G FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,632

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1.6GHz

-

1.1V

-40°C ~ 85°C (TA)

Surface Mount

-

MTFC8GACAALT-4M IT

Micron Technology Inc.

MODULE EMMC 8GB 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

패키지: 100-TBGA

재고5,552

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)

MT29GZ5A5BPGGA-53AIT.87J

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL MCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,368

-

MT29GZ5A5BPGGA-53AIT.87J TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL MCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,192

-

MTFC8GACAANA-4M IT TR

Micron Technology Inc.

MODULE EMMC 8GB 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

패키지: 100-TBGA

재고6,688

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.3V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)

MTFC8GACAALT-4M IT TR

Micron Technology Inc.

MODULE EMMC 8GB 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

패키지: 100-TBGA

재고5,472

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)

MT40A512M8SA-062E IT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고6,736

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT29F256G08EBHBFJ4-3ITFES:B

Micron Technology Inc.

IC FLASH 256G PARALLEL 132VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,840

-