페이지 93 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT40A512M16LY-062E AIT:E TR	Micron Technology Inc.	IC SDRAM DDR4 8G 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고4,816	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT40A1G8SA-062E AIT:E TR	Micron Technology Inc.	IC SDRAM DDR4 8G PAR 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고4,464	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT53E256M32D2DS-053 AIT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,024	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53E256M32D2DS-046 AIT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,560	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53D512M16D1DS-046 AIT:D	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (512M x 16) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고2,016	DRAM	SDRAM - Mobile LPDDR4	8Gb (512M x 16)	-	2.133GHz	-	-	-	-40°C ~ 95°C (TC)	Surface Mount	-	-
MT52L256M64D2QB-125 XT:B TR	Micron Technology Inc.	IC DRAM LPDDR3 16G FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,864	-	-	-	-	-	-	-	-	-	-	-	-
MT52L256M64D2QA-125 XT:B TR	Micron Technology Inc.	IC DRAM LPDDR3 16G FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,264	-	-	-	-	-	-	-	-	-	-	-	-
MT53E256M32D2DS-053 AIT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,800	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53E256M32D2DS-046 AIT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고7,824	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53D512M16D1DS-046 AIT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (512M x 16) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,232	DRAM	SDRAM - Mobile LPDDR4	8Gb (512M x 16)	-	2.133GHz	-	-	-	-40°C ~ 95°C (TC)	Surface Mount	-	-
MT29F256G08EBHBFB16C3WC1-FES	Micron Technology Inc.	IC FLASH 256G PARALLEL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,784	-	-	-	-	-	-	-	-	-	-	-	-
MTFC8GLWDM-AIT A	Micron Technology Inc.	MODULE EMMC 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	패키지: 153-TFBGA	재고2,784	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC8GLWDM-AIT A TR	Micron Technology Inc.	MODULE EMMC 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	패키지: 153-TFBGA	재고6,672	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MT40A512M16JY-083E IT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고5,776	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT40A1G8WE-083E IT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x12)	패키지: 78-TFBGA	재고5,520	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.2GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x12)
MT53E256M32D2DS-046 IT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,240	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53E256M32D2DS-046 IT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,000	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT35XU01GBBA2G12-0AUT	Micron Technology Inc.	IC FLASH NOR 1GB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고6,624	FLASH	FLASH - NOR	1Gb (128M x 8)	Xccela Bus	200MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT35XU01GBBA1G12-0AUT	Micron Technology Inc.	IC FLASH NOR 1GB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,392	FLASH	FLASH - NOR	1Gb (128M x 8)	Xccela Bus	200MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT40A512M8SA-062E AAT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고7,600	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT40A256M16LY-062E AAT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고6,448	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT35XU01GBBA2G12-0AUT TR	Micron Technology Inc.	IC FLASH NOR 1GB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,648	FLASH	FLASH - NOR	1Gb (128M x 8)	Xccela Bus	200MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT35XU01GBBA1G12-0AUT TR	Micron Technology Inc.	IC FLASH NOR 1GB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,456	FLASH	FLASH - NOR	1Gb (128M x 8)	Xccela Bus	200MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT40A512M8SA-062E AAT:F TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고4,752	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
MT53E256M32D2DS-053 WT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고7,376	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-
MT53D512M16D1DS-046 WT:D	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (512M x 16) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,792	DRAM	SDRAM - Mobile LPDDR4	8Gb (512M x 16)	-	2.133GHz	-	-	-	-30°C ~ 85°C (TC)	Surface Mount	-	-
MT40A256M16LY-062E AIT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고7,824	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT53E256M32D2DS-053 WT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,800	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-

MT40A512M16LY-062E AIT:E TR

Micron Technology Inc.

IC SDRAM DDR4 8G 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고4,816

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT40A1G8SA-062E AIT:E TR

Micron Technology Inc.

IC SDRAM DDR4 8G PAR 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고4,464

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT53E256M32D2DS-053 AIT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,024

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1.866GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53E256M32D2DS-046 AIT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,560

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53D512M16D1DS-046 AIT:D

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,016

DRAM

SDRAM - Mobile LPDDR4

8Gb (512M x 16)

-

2.133GHz

-

-40°C ~ 95°C (TC)

Surface Mount

-

MT52L256M64D2QB-125 XT:B TR

Micron Technology Inc.

IC DRAM LPDDR3 16G FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,864

-

MT52L256M64D2QA-125 XT:B TR

Micron Technology Inc.

IC DRAM LPDDR3 16G FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,264

-

MT53E256M32D2DS-053 AIT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,800

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1.866GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53E256M32D2DS-046 AIT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,824

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53D512M16D1DS-046 AIT:D TR

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,232

DRAM

SDRAM - Mobile LPDDR4

8Gb (512M x 16)

-

2.133GHz

-

-40°C ~ 95°C (TC)

Surface Mount

-

MT29F256G08EBHBFB16C3WC1-FES

Micron Technology Inc.

IC FLASH 256G PARALLEL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,784

-

MTFC8GLWDM-AIT A

Micron Technology Inc.

MODULE EMMC 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

패키지: 153-TFBGA

재고2,784

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC8GLWDM-AIT A TR

Micron Technology Inc.

MODULE EMMC 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

패키지: 153-TFBGA

재고6,672

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MT40A512M16JY-083E IT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고5,776

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT40A1G8WE-083E IT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x12)

패키지: 78-TFBGA

재고5,520

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.2GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x12)

MT53E256M32D2DS-046 IT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,240

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53E256M32D2DS-046 IT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,000

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT35XU01GBBA2G12-0AUT

Micron Technology Inc.

IC FLASH NOR 1GB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고6,624

FLASH

FLASH - NOR

1Gb (128M x 8)

Xccela Bus

200MHz

-

1.7V ~ 2V

-40°C ~ 125°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT35XU01GBBA1G12-0AUT

Micron Technology Inc.

IC FLASH NOR 1GB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,392

FLASH

FLASH - NOR

1Gb (128M x 8)

Xccela Bus

200MHz

-

1.7V ~ 2V

-40°C ~ 125°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT40A512M8SA-062E AAT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고7,600

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT40A256M16LY-062E AAT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고6,448

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT35XU01GBBA2G12-0AUT TR

Micron Technology Inc.

IC FLASH NOR 1GB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,648

FLASH

FLASH - NOR

1Gb (128M x 8)

Xccela Bus

200MHz

-

1.7V ~ 2V

-40°C ~ 125°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT35XU01GBBA1G12-0AUT TR

Micron Technology Inc.

IC FLASH NOR 1GB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,456

FLASH

FLASH - NOR

1Gb (128M x 8)

Xccela Bus

200MHz

-

1.7V ~ 2V

-40°C ~ 125°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT40A512M8SA-062E AAT:F TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고4,752

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

MT53E256M32D2DS-053 WT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,376

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-

MT53D512M16D1DS-046 WT:D

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,792

DRAM

SDRAM - Mobile LPDDR4

8Gb (512M x 16)

-

2.133GHz

-

-30°C ~ 85°C (TC)

Surface Mount

-

MT40A256M16LY-062E AIT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고7,824

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT53E256M32D2DS-053 WT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,800

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-