ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 148
페이지  1/6
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NGTB15N60EG
ON Semiconductor

IGBT 600V 30A 117W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A
  • Power - Max: 117W
  • Switching Energy: 900µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 78ns/130ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고3,248
600V
30A
120A
1.95V @ 15V, 15A
117W
900µJ (on), 300µJ (off)
Standard
80nC
78ns/130ns
400V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
NGTG15N60S1EG
ON Semiconductor

IGBT 600V 30A 117W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
  • Power - Max: 117W
  • Switching Energy: 550µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고6,368
600V
30A
120A
1.7V @ 15V, 15A
117W
550µJ (on), 350µJ (off)
Standard
88nC
65ns/170ns
400V, 15A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
NGTB40N120L3WG
ON Semiconductor

IGBT 1200V 160A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 1.5mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 18ns/150ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 86ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,920
1200V
160A
160A
2V @ 15V, 40A
454W
1.5mJ (on), 1.5mJ (off)
Standard
220nC
18ns/150ns
600V, 40A, 10 Ohm, 15V
86ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB25N120IHLWG
ON Semiconductor

IGBT 1200V 50A 192W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Power - Max: 192W
  • Switching Energy: 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,864
1200V
50A
200A
2.3V @ 15V, 25A
192W
800µJ (off)
Standard
200nC
-/235ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGTB20N120LWG
ON Semiconductor

IGBT 1200V 40A 192W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 192W
  • Switching Energy: 3.1mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 86ns/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,568
1200V
40A
200A
2.2V @ 15V, 20A
192W
3.1mJ (on), 700µJ (off)
Standard
200nC
86ns/235ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTG50N60FLWG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/292ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,392
600V
100A
200A
1.9V @ 15V, 50A
223W
1.1mJ (on), 600µJ (off)
Standard
310nC
116ns/292ns
400V, 50A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGTB40N120FL2WG
ON Semiconductor

IGBT 1200V 80A 535W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 3.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 116ns/286ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고15,936
1200V
80A
200A
2.4V @ 15V, 40A
535W
3.4mJ (on), 1.1mJ (off)
Standard
313nC
116ns/286ns
600V, 40A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot TIG056BF-1E
ON Semiconductor

IGBT 430V 240A 30W TO-220F-3FS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 320V, 240A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3FS
패키지: TO-220-3 Full Pack
재고156,000
430V
-
240A
5V @ 15V, 240A
30W
-
Standard
-
46ns/140ns
320V, 240A, 10 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3FS
TIG067SS-TL-2W
ON Semiconductor

IGBT 400V 150A 8SOIC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 4V, 150A
  • Power - Max: 1.2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,176
400V
-
150A
5V @ 4V, 150A
1.2W
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot NGTB10N60R2DT4G
ON Semiconductor

IGBT 10A 600V DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 72W
  • Switching Energy: 412µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 48ns/120ns
  • Test Condition: 300V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,824
600V
20A
40A
2.1V @ 15V, 10A
72W
412µJ (on), 140µJ (off)
Standard
53nC
48ns/120ns
300V, 10A, 30 Ohm, 15V
90ns
175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
NGTB03N60R2DT4G
ON Semiconductor

IGBT 9A 600V DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 49W
  • Switching Energy: 50µJ (on), 27µJ (off)
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: 27ns/59ns
  • Test Condition: 300V, 3A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,096
600V
9A
12A
2.1V @ 15V, 3A
49W
50µJ (on), 27µJ (off)
Standard
17nC
27ns/59ns
300V, 3A, 30 Ohm, 15V
65ns
175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot TIG065E8-TL-H
ON Semiconductor

IGBT 400V 150A ECH8

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
패키지: 8-SMD, Flat Lead
재고3,114,096
400V
-
150A
7V @ 2.5V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot TIG058E8-TL-H
ON Semiconductor

IGBT 400V ECH8

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5.6V @ 4V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
패키지: 8-SMD, Flat Lead
재고47,760
400V
-
150A
5.6V @ 4V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
NGTB60N65FL2WG
ON Semiconductor

650V/60A IGBT FSII

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 595W
  • Switching Energy: 1.59mJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 318nC
  • Td (on/off) @ 25°C: 117ns/265ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 96ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고6,016
650V
100A
240A
2V @ 15V, 60A
595W
1.59mJ (on), 660µJ (off)
Standard
318nC
117ns/265ns
400V, 60A, 10 Ohm, 15V
96ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB40N120S3WG
ON Semiconductor

IGBT 1.2KV 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 2.2mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 212nC
  • Td (on/off) @ 25°C: 12ns/145ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 163ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고8,340
1200V
160A
160A
1.95V @ 15V, 40A
454W
2.2mJ (on), 1.1mJ (off)
Standard
212nC
12ns/145ns
600V, 40A, 10 Ohm, 15V
163ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot NGTB40N120FL3WG
ON Semiconductor

IGBT 1200V 160A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 1.6mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 212nC
  • Td (on/off) @ 25°C: 18ns/145ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 136ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고14,520
1200V
160A
160A
2.3V @ 15V, 40A
454W
1.6mJ (on), 1.1mJ (off)
Standard
212nC
18ns/145ns
600V, 40A, 10 Ohm, 15V
136ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB25N120FLWG
ON Semiconductor

IGBT 1200V 25A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: 192W
  • Switching Energy: 1.5mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 91ns/228ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,776
1200V
50A
200A
2.2V @ 15V, 25A
192W
1.5mJ (on), 950µJ (off)
Standard
220nC
91ns/228ns
600V, 25A, 10 Ohm, 15V
240ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB25N120FL3WG
ON Semiconductor

IGBT 1200V 100A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 349W
  • Switching Energy: 1mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 136nC
  • Td (on/off) @ 25°C: 15ns/109ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 114ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고11,484
1200V
100A
100A
2.4V @ 15V, 25A
349W
1mJ (on), 700µJ (off)
Standard
136nC
15ns/109ns
600V, 25A, 10 Ohm, 15V
114ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB40N65IHL2WG
ON Semiconductor

IGBT 650V 40A TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: -/140ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 465ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,648
650V
80A
160A
2.2V @ 15V, 40A
300W
360µJ (off)
Standard
135nC
-/140ns
400V, 40A, 10 Ohm, 15V
465ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot NGTB15N120FLWG
ON Semiconductor

IGBT 1200V 15A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 156W
  • Switching Energy: 1.17mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 72ns/168ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 166ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,772
1200V
30A
120A
2.2V @ 15V, 15A
156W
1.17mJ (on), 550µJ (off)
Standard
150nC
72ns/168ns
600V, 15A, 10 Ohm, 15V
166ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N60FWG
ON Semiconductor

IGBT 600V 100A 223W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 117ns/285ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,600
600V
100A
200A
1.7V @ 15V, 50A
223W
1.1mJ (on), 1.2mJ (off)
Standard
310nC
117ns/285ns
400V, 50A, 10 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB20N135IHRWG
ON Semiconductor

IGBT 1350V 40A 394W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
  • Power - Max: 394W
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/245ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,528
1350V
40A
120A
2.65V @ 15V, 20A
394W
600µJ (off)
Standard
234nC
-/245ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB20N120IHRWG
ON Semiconductor

IGBT 1200V 40A 384W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
  • Power - Max: 384W
  • Switching Energy: 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,744
1200V
40A
120A
2.45V @ 15V, 20A
384W
450µJ (off)
Standard
225nC
-/235ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB40N120SWG
ON Semiconductor

IGBT 40A 1200V TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 3.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 116ns/286ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,888
1200V
80A
200A
2.4V @ 15V, 40A
535W
3.4mJ (on), 1.1mJ (off)
Standard
313nC
116ns/286ns
600V, 40A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot NGTG50N60FWG
ON Semiconductor

IGBT 600V 100A 223W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 117ns/285ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,296
600V
100A
200A
1.7V @ 15V, 50A
223W
1.1mJ (on), 1.2mJ (off)
Standard
310nC
117ns/285ns
400V, 50A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB40N120IHRWG
ON Semiconductor

IGBT 1200V 80A 384W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A
  • Power - Max: 384W
  • Switching Energy: 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/230ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,660
1200V
80A
120A
2.55V @ 15V, 40A
384W
950µJ (off)
Standard
225nC
-/230ns
600V, 40A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTG30N60FWG
ON Semiconductor

IGBT 600V 60A 167W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 167W
  • Switching Energy: 650µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 81ns/190ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,752
600V
60A
120A
1.7V @ 15V, 30A
167W
650µJ (on), 650µJ (off)
Standard
170nC
81ns/190ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGTB50N120FL2WG
ON Semiconductor

IGBT 1200V 100A 535W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 535W
  • Switching Energy: 4.4mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 311nC
  • Td (on/off) @ 25°C: 118ns/282ns
  • Test Condition: 600V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 256ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,488
1200V
100A
200A
2.2V @ 15V, 50A
535W
4.4mJ (on), 1.4mJ (off)
Standard
311nC
118ns/282ns
600V, 50A, 10 Ohm, 15V
256ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247