Rohm Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 181
페이지  1/7
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RGS30TSX2DGC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 157 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고675
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
157 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGS80TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 73A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 272 W
  • Switching Energy: 1.05mJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 37ns/112ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고489
650 V
73 A
120 A
2.1V @ 15V, 40A
272 W
1.05mJ (on), 1.03mJ (off)
Standard
48 nC
37ns/112ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGWS00TS65GC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 88 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 245 W
  • Switching Energy: 980µJ (on), 910µJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 46ns/145ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
88 A
150 A
2V @ 15V, 50A
245 W
980µJ (on), 910µJ (off)
Standard
108 nC
46ns/145ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGS30TSX2DHRC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 157 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고9,390
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
157 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW00TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 48ns/186ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
-
Standard
141 nC
48ns/186ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTV00TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 45A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 45 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 94 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,320
650 V
45 A
200 A
1.9V @ 15V, 50A
94 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGW00TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 48ns/186ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,275
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
-
Standard
141 nC
48ns/186ns
400V, 25A, 10Ohm, 15V
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGWSX2TS65GC13
Rohm Semiconductor

IGBT TRENCH FS 650V 104A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 288 W
  • Switching Energy: 1.43mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 55ns/180ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
104 A
180 A
2V @ 15V, 60A
288 W
1.43mJ (on), 1.2mJ (off)
Standard
140 nC
55ns/180ns
400V, 60A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGW50NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 57A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 57 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 165 W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 31ns/119ns
  • Test Condition: 400V, 12.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 71 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
57 A
100 A
1.9V @ 15V, 25A
165 W
110µJ (on), 230µJ (off)
Standard
73 nC
31ns/119ns
400V, 12.5A, 10Ohm, 15V
71 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGS80TSX2GC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 3mJ (on), 3.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 49ns/199ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고753
1200 V
80 A
120 A
2.1V @ 15V, 40A
555 W
3mJ (on), 3.1mJ (off)
Standard
104 nC
49ns/199ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT40TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/75ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,350
650 V
40 A
60 A
2.1V @ 15V, 20A
144 W
-
Standard
40 nC
22ns/75ns
400V, 20A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGW50TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 30A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 67 W
  • Switching Energy: 390µJ (on), 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 35ns/102ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,350
650 V
30 A
100 A
1.9V @ 15V, 25A
67 W
390µJ (on), 430µJ (off)
Standard
73 nC
35ns/102ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGCL80TS60GC13
Rohm Semiconductor

IGBT TRENCH FS 600V 65A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
600 V
65 A
160 A
1.8V @ 15V, 40A
148 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGCL80TS60GC11
Rohm Semiconductor

IGBT TRNCH FIELD 600V 65A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,260
600 V
65 A
160 A
1.8V @ 15V, 40A
148 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH00TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,779
650 V
85 A
200 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
54 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGS50TSX2DHRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 182 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,044
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
182 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW80TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 43ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 86 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
80 A
160 A
1.9V @ 15V, 40A
214 W
-
Standard
110 nC
43ns/148ns
400V, 20A, 10Ohm, 15V
86 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGS80TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 73A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 272 W
  • Switching Energy: 1.05mJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 37ns/112ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고240
650 V
73 A
120 A
2.1V @ 15V, 40A
272 W
1.05mJ (on), 1.03mJ (off)
Standard
48 nC
37ns/112ns
400V, 40A, 10Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH80TS65GC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
70 A
160 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RGTH80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고345
650 V
70 A
160 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW80NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 83A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 83 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 227 W
  • Switching Energy: 240µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고2,991
650 V
83 A
160 A
1.9V @ 15V, 40A
227 W
240µJ (on), 330µJ (off)
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGW00TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: 1.18mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 52ns/180ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
1.18mJ (on), 960µJ (off)
Standard
141 nC
52ns/180ns
400V, 50A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGSX5TS65EHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 114A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 114 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 404 W
  • Switching Energy: 3.44mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 43ns/113ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 116 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,170
650 V
114 A
225 A
2.15V @ 15V, 75A
404 W
3.44mJ (on), 1.9mJ (off)
Standard
79 nC
43ns/113ns
400V, 75A, 10Ohm, 15V
116 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGS40NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 42A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 42 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 177 W
  • Switching Energy: 560µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 28 nC
  • Td (on/off) @ 25°C: 24ns/87ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 93 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
42 A
60 A
2.1V @ 15V, 20A
177 W
560µJ (on), 490µJ (off)
Standard
28 nC
24ns/87ns
400V, 20A, 10Ohm, 15V
93 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
RGPZ10BM40FHTL
Rohm Semiconductor

IGBT 460V 20A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 460 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 107 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
패키지: -
재고22,467
460 V
20 A
-
2.0V @ 5V, 10A
107 W
-
Standard
14 nC
500ns/4µs
300V, 8A, 100Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
RGTH00TK65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 72 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,209
650 V
35 A
200 A
2.1V @ 15V, 50A
72 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
RGPR30NS40HRTL
Rohm Semiconductor

IGBT 430V 30A IGNITION LPDS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 125 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
패키지: -
재고1,023
430 V
30 A
-
2.0V @ 5V, 10A
125 W
-
Standard
22 nC
500ns/4µs
300V, 8A, 100Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
RGTV80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: 1.02mJ (on), 710µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 39ns/113ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
78 A
160 A
1.9V @ 15V, 40A
234 W
1.02mJ (on), 710µJ (off)
Standard
81 nC
39ns/113ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N