페이지 7 - Rohm Semiconductor 제품 - 트랜지스터 - IGBT - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RGTH00TS65DGC11	Rohm Semiconductor	IGBT 650V 85A 277W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 277W Switching Energy: - Input Type: Standard Gate Charge: 94nC Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 54ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고6,552	650V	85A	200A	2.1V @ 15V, 50A	277W	-	Standard	94nC	39ns/143ns	400V, 50A, 10 Ohm, 15V	54ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGTH80TS65DGC11	Rohm Semiconductor	IGBT 650V 70A 234W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 234W Switching Energy: - Input Type: Standard Gate Charge: 79nC Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고9,132	650V	70A	160A	2.1V @ 15V, 40A	234W	-	Standard	79nC	34ns/120ns	400V, 40A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGT50TS65DGC11	Rohm Semiconductor	IGBT 650V 48A 174W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 174W Switching Energy: - Input Type: Standard Gate Charge: 49nC Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고9,132	650V	48A	75A	2.1V @ 15V, 25A	174W	-	Standard	49nC	27ns/88ns	400V, 25A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGTH50TS65DGC11	Rohm Semiconductor	IGBT 650V 50A 174W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 174W Switching Energy: - Input Type: Standard Gate Charge: 49nC Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고11,088	650V	50A	100A	2.1V @ 15V, 25A	174W	-	Standard	49nC	27ns/94ns	400V, 25A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGTH60TS65DGC11	Rohm Semiconductor	IGBT 650V 58A 194W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 58A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 194W Switching Energy: - Input Type: Standard Gate Charge: 58nC Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고6,228	650V	58A	120A	2.1V @ 15V, 30A	194W	-	Standard	58nC	27ns/105ns	400V, 30A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGTH60TS65GC11	Rohm Semiconductor	IGBT 650V 58A 197W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 58A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 197W Switching Energy: - Input Type: Standard Gate Charge: 58nC Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고6,696	650V	58A	120A	2.1V @ 15V, 30A	197W	-	Standard	58nC	27ns/105ns	400V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGT40TS65DGC11	Rohm Semiconductor	IGBT 650V 40A 144W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 144W Switching Energy: - Input Type: Standard Gate Charge: 40nC Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고9,312	650V	40A	60A	2.1V @ 15V, 20A	144W	-	Standard	40nC	22ns/75ns	400V, 20A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGTH40TS65DGC11	Rohm Semiconductor	IGBT 650V 40A 144W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 144W Switching Energy: - Input Type: Standard Gate Charge: 40nC Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고8,316	650V	40A	80A	2.1V @ 15V, 20A	144W	-	Standard	40nC	22ns/73ns	400V, 20A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGT30NS65DGTL	Rohm Semiconductor	IGBT 650V 30A 133W TO-263S IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 133W Switching Energy: - Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS (TO-263S)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,648	650V	30A	45A	2.1V @ 15V, 15A	133W	-	Standard	32nC	18ns/64ns	400V, 15A, 10 Ohm, 15V	55ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS (TO-263S)
RGT16NS65DGTL	Rohm Semiconductor	IGBT 650V 16A 94W TO-263S IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Power - Max: 94W Switching Energy: - Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS (TO-263S)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,232	650V	16A	24A	2.1V @ 15V, 8A	94W	-	Standard	21nC	13ns/33ns	400V, 8A, 10 Ohm, 15V	42ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS (TO-263S)
RGT8NS65DGTL	Rohm Semiconductor	IGBT 650V 8A 65W TO-263S IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Power - Max: 65W Switching Energy: - Input Type: Standard Gate Charge: 13.5nC Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS (TO-263S)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,056	650V	8A	12A	2.1V @ 15V, 4A	65W	-	Standard	13.5nC	17ns/69ns	400V, 4A, 50 Ohm, 15V	40ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS (TO-263S)
RGTH00TS65GC11	Rohm Semiconductor	IGBT 650V 85A 277W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 277W Switching Energy: - Input Type: Standard Gate Charge: 94nC Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고8,112	650V	85A	200A	2.1V @ 15V, 50A	277W	-	Standard	94nC	39ns/143ns	400V, 50A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
RGT80TS65DGC11	Rohm Semiconductor	IGBT 650V 70A 234W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 234W Switching Energy: - Input Type: Standard Gate Charge: 79nC Td (on/off) @ 25°C: 34ns/119ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: TO-247-3	재고7,272	650V	70A	120A	2.1V @ 15V, 40A	234W	-	Standard	79nC	34ns/119ns	400V, 40A, 10 Ohm, 15V	58ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N