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Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  102/163
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SSM6K514NU,LF
Toshiba Semiconductor and Storage

PB-F SMALL LOW ON RESISTANCE MOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
패키지: 6-WDFN Exposed Pad
재고3,936
TPH7R204PL,LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 48A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 15A, 4.5V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고24,258
2SC2235-Y(DNSO,AF)
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고3,360
2SA1315-Y,HOF(M
Toshiba Semiconductor and Storage

TRANS PNP 2A 80V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고6,656
hot CMS05(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 30V
  • Capacitance @ Vr, F: 330pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: SOD-128
재고66,468
TCV7101F(TE12L,Q)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 3.8A 8SOP-ADV

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.5V
  • Current - Output: 3.8A
  • Frequency - Switching: 600kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
패키지: 8-PowerVDFN
재고5,552
TB62218AFTG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (7x7)
패키지: 48-VFQFN Exposed Pad
재고6,960
TC7WT74FUTE12LF
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

  • Function: Set(Preset) and Reset
  • Type: D-Type
  • Output Type: Differential
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Clock Frequency: 53MHz
  • Max Propagation Delay @ V, Max CL: 30ns @ 5.5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Iq): 2µA
  • Input Capacitance: 5pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
재고5,664
TC74LCX244FTELM
Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고2,720
74VHCV07FT(BJ)
Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V 14TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 6
  • Number of Bits per Element: 1
  • Input Type: Schmitt Trigger
  • Output Type: Open Drain
  • Current - Output High, Low: -, 16mA
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOPB
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고20,976
74VHCT244AFT(BE)
Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고26,016
TLP7920(D4-TP1,F
Toshiba Semiconductor and Storage

X36 PB-F OPTO ISOLATION AMPLIFIE

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: -
  • Voltage - Input Offset: -
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: -
패키지: 8-SMD, Gull Wing
재고13,224
TC74HC4066APF
Toshiba Semiconductor and Storage

IC SWITCH QUAD 2X1 14DIP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 80 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 12ns, 18ns
  • -3db Bandwidth: 200MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 10pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -60dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고17,616
TL1WK-LL1,L
Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

  • Color: White, Warm
  • CCT (K): 2700K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 19 lm (17 lm ~ 23 lm)
  • Current - Test: 60mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 113 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 180mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SMD
  • Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
  • Height - Seated (Max): 0.015" (0.39mm)
패키지: 2-SMD, No Lead
재고7,200
DF2S6.8ASL,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM SL2-2

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 25pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
패키지: 0201 (0603 Metric)
재고249,768
DF3A3.3FU(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 1VWM USM

  • Type: Zener
  • Unidirectional Channels: 2
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 1V
  • Voltage - Breakdown (Min): 3.1V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 115pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고29,634
TLP700(F)
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 1.5A, 1.5A
  • Current - Peak Output: 2A
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.268", 6.80mm Width)
  • Supplier Device Package: 6-SDIP Gull Wing
  • Approvals: UR
패키지: 6-SOIC (0.268", 6.80mm Width)
재고7,056
TC62D748AFG,EL
Toshiba Semiconductor and Storage

CONSTANT CURRENT PANEL LED DRIVE

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,904
TCR3UG30A,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA 4WCSP-F

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.273V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Thermal Shutdown
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSP-F (0.65x0.65)
패키지: 4-XFBGA, WLCSP
재고49,158
TCR2LN19,LF
Toshiba Semiconductor and Storage

200MA LDO VOUT=1.9V DROPOUT=200M

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.6V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: 4-XFDFN Exposed Pad
재고97,074
TC74LCX02FT-EL
Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65V ~ 3.6V
  • Current - Quiescent (Max): 10 µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
패키지: -
Request a Quote
TK22A65X5-S5X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고384
TPH2R104PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
재고35,247
TCR2EN28-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=2.8V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.21V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: -
재고22,488
RN2906FE-LF-CT
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고11,928
CRS01-TE85L
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
RN4907FE-LF-CT
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고11,940
TK110N65Z-S1F
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247(O

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고75