페이지 104 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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TK35N65W5,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,416
TK5P53D(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 525V 5A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,352
TPN14006NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 13A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고3,552
TK35A65W,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고7,744
TPWR8503NL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 150A 8DSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고5,424
TK50P03M1(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 50A DP TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DP
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,544
2SC2383-O,T6ALPF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고3,952
RN2103CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
패키지: SC-101, SOT-883
재고3,456
RN1103,LF(CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고26,472
2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고21,624
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고26,742
RN4606(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고24,510
CES521,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA ESC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 30V
  • Capacitance @ Vr, F: 26pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
패키지: SC-79, SOD-523
재고6,176
TRS16N65D,S1F
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 90µA @ 650V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고3,248
HN2S02JE(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 40V ESV

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: SOT-553
재고4,944
hot TC7S14FU,LF
Toshiba Semiconductor and Storage

IC GATE USV L-MOS

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: Schmitt Trigger
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 2.6mA, 2.6mA
  • Logic Level - Low: 0.3 V ~ 1.5 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: 5-TSSOP, SC-70-5, SOT-353
재고1,440,000
TC74HC4066AF-ELF
Toshiba Semiconductor and Storage

IC MUX/DEMUX QUAD SPST SOP14

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 80 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 12ns, 18ns
  • -3db Bandwidth: 200MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 10pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -60dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 14-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 14-SOP
패키지: 14-SOIC (0.209", 5.30mm Width)
재고48,618
TL1L4-NW0,L4A5B
Toshiba Semiconductor and Storage

POWER LED WHT 5000K 3535

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
  • Flux @ 25°C, Current - Test: -
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 153 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 1.5A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.085" (2.15mm)
패키지: 1414 (3535 Metric)
재고6,228
DF5A3.6F(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 1VWM SMV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 1V
  • Voltage - Breakdown (Min): 3.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 110pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고3,510
TLP3127(F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 1.3A 30V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): -
  • Load Current: 1.3A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
패키지: 4-SOP (0.173", 4.40mm)
재고4,410
TLP3419(TP,F)
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 200MA 80V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 8 Ohm
  • Load Current: 200mA
  • Voltage - Input: 1.27VDC
  • Voltage - Load: 0 ~ 80 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.096", 2.45mm)
  • Supplier Device Package: 4-VSON
  • Relay Type: Relay
패키지: 4-SMD (0.096", 2.45mm)
재고28,500
TLP184(GB-TPL,SE
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
패키지: 6-SMD (4 Leads), Gull Wing
재고7,686
TC74ACT00P(F)
Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14DIP

  • Logic Type: NAND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 4µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Supplier Device Package: 14-DIP
  • Package / Case: 14-DIP (0.300", 7.62mm)
패키지: 14-DIP (0.300", 7.62mm)
재고5,360
RN4908-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP + NPN BRT, Q1B

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고18,000
SSM6K404TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A UF6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
패키지: -
재고4,911
TCR3RM28A-LF-SE
Toshiba Semiconductor and Storage

LDO REG 2.8V 300MA 4DFNC

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.15V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 12 µA
  • Current - Supply (Max): -
  • PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 4-DFNC (1x1)
패키지: -
재고15,825
TPC8207-TE12L
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
패키지: -
Request a Quote
TPCA8047-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 32A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
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