페이지 87 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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SSM3K302T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 3A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 2A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,048
TK17E80W,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 800V 17A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고9,120
SSM6J502NU,LF(T
Toshiba Semiconductor and Storage

MOSFET P CH 20V 6A 2-2AA1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 23.1 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
패키지: 6-WDFN Exposed Pad
재고28,572
2SA1020-Y(T6ND1,AF
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고5,120
RN1106MFV,L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고132,270
CRS08(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: SOD-123F
재고7,216
CES388,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA ESC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Capacitance @ Vr, F: 25pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
패키지: SC-79, SOD-523
재고7,808
TB7107FN(TE85L,F)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 2A SYNC 8SON

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.5V
  • Voltage - Input (Max): 20V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 18V
  • Current - Output: 2A
  • Frequency - Switching: 380kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
패키지: 8-SMD, Flat Lead
재고7,024
TCK22974G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.1 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 25 mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: Reverse Current
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
패키지: 6-UFBGA, WLCSP
재고7,872
74HC573D(BJ)
Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

  • Logic Type: D-Type Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2 V ~ 6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 26ns
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고19,506
TC74LVX00FTEL
Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

  • Logic Type: NAND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.5 V ~ 0.8 V
  • Logic Level - High: 1.5 V ~ 2.4 V
  • Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고3,408
TC35678FXG-002(EL)
Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

  • Type: TxRx + MCU
  • RF Family/Standard: Bluetooth
  • Protocol: Bluetooth v4.2
  • Modulation: GFSK
  • Frequency: 2.4GHz
  • Data Rate (Max): -
  • Power - Output: 0dBm
  • Sensitivity: -94dBm
  • Memory Size: 256kB Flash, 384kB ROM, 192kB RAM
  • Serial Interfaces: I2C, SPI
  • GPIO: 17
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Receiving: 3.3mA
  • Current - Transmitting: 3.3mA
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 60-VFQFN Exposed Pad
패키지: 60-VFQFN Exposed Pad
재고5,112
TLP292-4(4LGBTPE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고4,752
TLP292-4(GB-TP,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고28,572
hot TLP251(TP1,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8SMD

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 5kV/µs
  • Propagation Delay tpLH / tpHL (Max): 1µs, 1µs
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): -
  • Current - Output High, Low: 100mA, 100mA
  • Current - Peak Output: 400mA
  • Voltage - Forward (Vf) (Typ): 1.6V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -20°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SMD
  • Approvals: UR
패키지: 8-SMD, Gull Wing
재고7,956
hot 74LCX273FT
Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOPB

  • Function: Reset
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 135MHz
  • Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Iq): 40µA
  • Input Capacitance: 7pF
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고96,000
TCR15AG105,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 1.5A 6WCSP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.05V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.228V @ 1.5A
  • Current - Output: 1.5A
  • Current - Quiescent (Iq): 40µA
  • Current - Supply (Max): -
  • PSRR: 95dB ~ 60dB (1kHz)
  • Control Features: Enable
  • Protection Features: Current Limit, Thermal Shutdown, UVLO
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSP (1.2x0.80)
패키지: 6-XFBGA, WLCSP
재고39,018
TMPM061FWFG(C,OHZ)
Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,024
TTC014-L1NV
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR NEW PW-MOL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 800 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: -
재고5,889
TDTA123J-LM
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 320 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고8,910
MT3S113TU-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 11.2GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 12.5dB
  • Power - Max: 900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: UFM
패키지: -
재고7,506
TJ10S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 10A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고11,736
1SS322-TE85L-F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA USM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 40 V
  • Capacitance @ Vr, F: 18pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
재고26,982
7UL2G32FK-LF-B
Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

  • Logic Type: OR Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 0.9V ~ 3.6V
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.7V ~ 0.8V
  • Logic Level - High: 1.7V ~ 2V
  • Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
패키지: -
Request a Quote
TCR5RG12A-LF
Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT: 1.2V

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.2V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 13 µA
  • Current - Supply (Max): -
  • PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSPF (0.65x0.65)
패키지: -
Request a Quote
TPH1R306PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
패키지: -
재고29,154
TPCC8136-LQ
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.4A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
TW030Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 3

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 249W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
패키지: -
재고330