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Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  88/163
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TPN7R506NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 26A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고46,002
SSM3J15FV,L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 0.1A VESM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
패키지: SOT-723
재고93,948
2SA1225-Y(Q)
Toshiba Semiconductor and Storage

TRANS PNP 160V 1.5A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,456
RN1104T5LFT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고5,776
JDV2S09FSTPL3
Toshiba Semiconductor and Storage

DIODE STANDARD 10V FSC

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 10V
  • Current - Max: -
  • Capacitance @ Vr, F: 11.1pF @ 1V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: fSC
패키지: 2-SMD, Flat Lead
재고6,032
TA48025BF(T6L1,NQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 1A PW-MOLD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.88V @ 1A (Typ)
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.7mA ~ 20mA
  • PSRR: 64dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,712
TCR5AM085,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 0.85V 500MA 5DFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.85V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 55µA ~ 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
패키지: 4-XDFN Exposed Pad
재고45,198
TCR3DG12,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 300MA 4WCSPE

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPE (0.65x0.65)
패키지: 4-XFBGA, CSPBGA
재고44,718
TB6674FAG
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 100mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 2.7 V ~ 22 V
  • Operating Temperature: -30°C ~ 75°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOP (0.181", 4.60mm Width)
  • Supplier Device Package: 16-SSOP
패키지: 16-SOP (0.181", 4.60mm Width)
재고3,808
TC74VHC139FTELM
Toshiba Semiconductor and Storage

IC DECODER 2-4 LINE DUAL 16TSSOP

  • Type: Decoder/Demultiplexer
  • Circuit: 1 x 2:4
  • Independent Circuits: 2
  • Current - Output High, Low: 8mA, 8mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고4,832
TC7SH86FU,LJ(CT
Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: 5-TSSOP, SC-70-5, SOT-353
재고52,902
TL1WK-WH1,L
Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

  • Color: White, Neutral
  • CCT (K): 4000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 21 lm (18 lm ~ 26 lm)
  • Current - Test: 60mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 125 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 180mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SMD
  • Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
  • Height - Seated (Max): 0.015" (0.39mm)
패키지: 2-SMD, No Lead
재고7,470
TOTX1353(V,F)
Toshiba Semiconductor and Storage

FIBER OPTIC XMITTER 650NM

  • Wavelength: 650nm
  • Spectral Bandwidth: -
  • Voltage - Forward (Vf) (Typ): 1.75V
  • Current - DC Forward (If) (Max): 30mA
  • Voltage - DC Reverse (Vr) (Max): -
  • Capacitance: -
  • Connector Type: TOSLINK
패키지: -
재고6,462
TLP2409(F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 8SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 20% @ 16mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 20V
  • Current - Output / Channel: 16mA
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 25mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,948
TLP785(GR,F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 300% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
패키지: 4-DIP (0.300", 7.62mm)
재고6,876
TB6584AFNG,C8,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR CONTROLLER IC, S

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,296
TB67S522FTAG,EL
Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER IC 40V/2.8

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (6x6)
패키지: 36-WFQFN Exposed Pad
재고29,796
74VHC574FT
Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 115MHz
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고26,046
TC7WH34FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V SM8

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 3
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: SM8
패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
재고3,424
BAV99-LM
Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 215MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고16,389
RN2113-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고9,000
TK2R4A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 2.4MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고240
TB67B000AHG
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER, 600V, 2A

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (3)
  • Interface: PWM
  • Technology: IGBT
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 13.5V ~ 16.5V
  • Voltage - Load: 50V ~ 450V
  • Operating Temperature: -30°C ~ 115°C
  • Mounting Type: Through Hole
  • Package / Case: 30-PowerDIP Module
  • Supplier Device Package: 30-HDIP
패키지: -
재고75
RN1315-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: -
재고8,250
RN1910FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고24,000
RN4983FE-LF-CT
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고11,550
CMG06A-LQ-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
HN1B04FE-GR-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고7,059