페이지 3 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 705L3RH E6327	Infineon Technologies	TRANS RF BIPO NPN 10MA TSLP-3-9 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 39GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 25dB Power - Max: 40mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V Current - Collector (Ic) (Max): 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고6,400	4.7V	39GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	25dB	40mW	160 @ 7mA, 3V	10mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFP450E6327BTSA1	Infineon Technologies	TRANS NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고5,216	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MRF5812R1	Microsemi Corporation	TRANS NPN 15V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고306,096	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UTV200	Microsemi Corporation	TRANS RF BIPO 80W 4.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV	패키지: 55JV	재고7,616	28V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	80W	10 @ 1A, 5V	4.5A	200°C (TJ)	Chassis Mount	55JV	55JV
MS1051	Microsemi Corporation	TRANS RF BIPO 290W 20A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 11dB ~ 13dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고6,624	18V	30MHz	-	11dB ~ 13dB	290W	10 @ 5mA, 5V	20A	200°C (TJ)	Chassis Mount	M174	M174
NE85633-T1B-R24-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,032	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	80 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE681M03-T1-A	CEL	TRANSISTOR NPN 1GHZ M03 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: M03	패키지: SOT-623F	재고5,264	10V	7GHz	1.4dB ~ 2.7dB @ 1GHz	-	125mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-623F	M03
MPS5179	Fairchild/ON Semiconductor	TRANSISTOR RF NPN TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고62,244	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SD1731	STMicroelectronics	TRANSISTOR NPN RF HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,376	55V	-	-	13dB	233W	15 @ 10A, 6V	20A	200°C (TJ)	Surface Mount	M174	M174
BFG480W,115	NXP	TRANS NPN 4.5V 21GHZ SOT343R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz Gain: 16dB Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	패키지: SC-82A, SOT-343	재고2,720	4.5V	21GHz	1.2dB ~ 1.8dB @ 900MHz ~ 2GHz	16dB	360mW	40 @ 80mA, 2V	250mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
PH3135-20M	M/A-Com Technology Solutions	TRANSISTOR 20W 36V 3.10-3.50GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 20W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.4A Operating Temperature: 200°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,440	65V	-	-	7.5dB	20W	-	2.4A	200°C (TJ)	-	-	-
SD1444	Microsemi Corporation	TRANS RF BIPO 5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고5,168	16V	450MHz ~ 512MHz	-	8dB	5W	20 @ 50mA, 5V	400mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NE68139-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	패키지: TO-253-4, TO-253AA	재고7,072	10V	9GHz	1.2dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
15GN01MA-TL-E	ON Semiconductor	TRANS NPN BIPO 50MA 8V MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Gull Wing Supplier Device Package: 3-MCP	패키지: 3-SMD, Gull Wing	재고2,592	8V	1.5GHz	-	-	400mW	200 @ 10mA, 5V	50mA	150°C (TJ)	Surface Mount	3-SMD, Gull Wing	3-MCP
MRF10005	M/A-Com Technology Solutions	TRANS 5W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 1.25mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 336E-02 Supplier Device Package: 336E-02, Style 1	패키지: 336E-02	재고6,024	55V	-	-	8.5dB ~ 10.3dB	25W	20 @ 500mA, 5V	1.25mA	200°C (TJ)	Chassis Mount	336E-02	336E-02, Style 1
NE68039R-T1	CEL	TRANS NPN 2GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz Gain: 6.5dB ~ 11dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고29,646	10V	10GHz	1.7dB ~ 2.6dB @ 2GHz ~ 4GHz	6.5dB ~ 11dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
DSC5G0200L	Panasonic Electronic Components	TRANS RF NPN 20V 15MA SMINI3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	패키지: SC-85	재고3,136	20V	650MHz	3.3dB @ 100MHz	24dB	150mW	65 @ 1mA, 6V	15mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2-B
2SC5087-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	패키지: SC-61AA	재고28,542	12V	7GHz	1dB ~ 1.1dB @ 500MHz ~ 1GHz	-	150mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
2SC27780CL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA MINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 230MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고25,506	20V	230MHz	-	-	200mW	110 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
2SC4713KT146S	Rohm Semiconductor	TRANS NPN 6V 50MA SOT-346 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고215,760	6V	800MHz	-	-	200mW	180 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
BFP620H7764XTSA1	Infineon Technologies	TRANS RF NPN 2.3V 80MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21.5dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고51,504	2.8V	65GHz	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz	21.5dB	185mW	110 @ 50mA, 1.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP650FH6327XTSA1	Infineon Technologies	TRANS RF NPN 42GHZ 4.5V 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 11dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고53,592	4.5V	42GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	11dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
MRF448A	MACOM Technology Solutions	TRANSISTOR,<30MHZ,50V,250W Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 10V Current - Collector (Ic) (Max): 16A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	패키지: -	Request a Quote	50V	-	-	14dB	290W	25 @ 5A, 10V	16A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MSC1175MA	Microsemi Corporation	RF TRANS NPN 65V 1.15GHZ M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	패키지: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C	Chassis Mount	M218	M218
2SA1575E-TD-E	Sanyo	PNP DARLINGTON TRANSISTOR Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 200V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: -	Request a Quote	200V	400MHz	-	-	500mW	40 @ 10mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
ON5088-115	NXP	RF TRANS NPN 10V 55GHZ 4DFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 55GHz Noise Figure (dB Typ @ f): 1.1dB @ 12GHz Gain: 13dB Power - Max: 136mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	패키지: -	재고5,277	10V	55GHz	1.1dB @ 12GHz	13dB	136mW	160 @ 10mA, 2V	40mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
4MN10CH-TL-E	onsemi	BIP NPN 0.1A 200V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 200V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	패키지: -	Request a Quote	200V	400MHz	-	-	600mW	60 @ 10mA, 10V	100mA	-	Surface Mount	SC-96	3-CPH
2SC4784YA-TR-E	Renesas Electronics Corporation	RF 0.02A, NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR 705L3RH E6327

Infineon Technologies

TRANS RF BIPO NPN 10MA TSLP-3-9

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 39GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 25dB
Power - Max: 40mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고6,400

4.7V

39GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

25dB

40mW

160 @ 7mA, 3V

10mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFP450E6327BTSA1

Infineon Technologies

TRANS NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고5,216

5V

24GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 50mA, 4V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MRF5812R1

Microsemi Corporation

TRANS NPN 15V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고306,096

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UTV200

Microsemi Corporation

TRANS RF BIPO 80W 4.5A 55JV2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 28V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JV
Supplier Device Package: 55JV

패키지: 55JV

재고7,616

28V

470MHz ~ 860MHz

-

8.5dB ~ 9.5dB

80W

10 @ 1A, 5V

4.5A

200°C (TJ)

Chassis Mount

55JV

MS1051

Microsemi Corporation

TRANS RF BIPO 290W 20A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 13dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고6,624

18V

30MHz

-

11dB ~ 13dB

290W

10 @ 5mA, 5V

20A

200°C (TJ)

Chassis Mount

M174

NE85633-T1B-R24-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고2,032

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

80 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE681M03-T1-A

CEL

TRANSISTOR NPN 1GHZ M03

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: M03

패키지: SOT-623F

재고5,264

10V

7GHz

1.4dB ~ 2.7dB @ 1GHz

-

125mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-623F

M03

MPS5179

Fairchild/ON Semiconductor

TRANSISTOR RF NPN TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고62,244

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

SD1731

STMicroelectronics

TRANSISTOR NPN RF HF SSB M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M174
Supplier Device Package: M174

패키지: M174

재고3,376

55V

-

13dB

233W

15 @ 10A, 6V

20A

200°C (TJ)

Surface Mount

M174

BFG480W,115

NXP

TRANS NPN 4.5V 21GHZ SOT343R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain: 16dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

패키지: SC-82A, SOT-343

재고2,720

4.5V

21GHz

1.2dB ~ 1.8dB @ 900MHz ~ 2GHz

16dB

360mW

40 @ 80mA, 2V

250mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

PH3135-20M

M/A-Com Technology Solutions

TRANSISTOR 20W 36V 3.10-3.50GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 20W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.4A
Operating Temperature: 200°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,440

65V

-

7.5dB

20W

-

2.4A

200°C (TJ)

-

SD1444

Microsemi Corporation

TRANS RF BIPO 5W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고5,168

16V

450MHz ~ 512MHz

-

8dB

5W

20 @ 50mA, 5V

400mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NE68139-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

패키지: TO-253-4, TO-253AA

재고7,072

10V

9GHz

1.2dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

15GN01MA-TL-E

ON Semiconductor

TRANS NPN BIPO 50MA 8V MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Supplier Device Package: 3-MCP

패키지: 3-SMD, Gull Wing

재고2,592

8V

1.5GHz

-

400mW

200 @ 10mA, 5V

50mA

150°C (TJ)

Surface Mount

3-SMD, Gull Wing

3-MCP

MRF10005

M/A-Com Technology Solutions

TRANS 5W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10.3dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 1.25mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 336E-02
Supplier Device Package: 336E-02, Style 1

패키지: 336E-02

재고6,024

55V

-

8.5dB ~ 10.3dB

25W

20 @ 500mA, 5V

1.25mA

200°C (TJ)

Chassis Mount

336E-02

336E-02, Style 1

NE68039R-T1

CEL

TRANS NPN 2GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
Gain: 6.5dB ~ 11dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

패키지: SOT-143R

재고29,646

10V

10GHz

1.7dB ~ 2.6dB @ 2GHz ~ 4GHz

6.5dB ~ 11dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SOT-143R

DSC5G0200L

Panasonic Electronic Components

TRANS RF NPN 20V 15MA SMINI3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

패키지: SC-85

재고3,136

20V

650MHz

3.3dB @ 100MHz

24dB

150mW

65 @ 1mA, 6V

15mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2-B

2SC5087-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

패키지: SC-61AA

재고28,542

12V

7GHz

1dB ~ 1.1dB @ 500MHz ~ 1GHz

-

150mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

2SC27780CL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA MINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 230MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고25,506

20V

230MHz

-

200mW

110 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

2SC4713KT146S

Rohm Semiconductor

TRANS NPN 6V 50MA SOT-346

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고215,760

6V

800MHz

-

200mW

180 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

BFP620H7764XTSA1

Infineon Technologies

TRANS RF NPN 2.3V 80MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 21.5dB
Power - Max: 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고51,504

2.8V

65GHz

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

21.5dB

185mW

110 @ 50mA, 1.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP650FH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.5V 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고53,592

4.5V

42GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

11dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

MRF448A

MACOM Technology Solutions

TRANSISTOR,<30MHZ,50V,250W

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5A, 10V
Current - Collector (Ic) (Max): 16A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

패키지: -

Request a Quote

50V

-

14dB

290W

25 @ 5A, 10V

16A

-

Chassis Mount

211-11, Style 2

MSC1175MA

Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 250°C
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

패키지: -

Request a Quote

65V

1.025GHz ~ 1.15GHz

-

8dB

400W

15 @ 1A, 5V

12A

250°C

Chassis Mount

M218

2SA1575E-TD-E

Sanyo

PNP DARLINGTON TRANSISTOR

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 200V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: -

Request a Quote

200V

400MHz

-

500mW

40 @ 10mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

ON5088-115

NXP

RF TRANS NPN 10V 55GHZ 4DFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 55GHz
Noise Figure (dB Typ @ f): 1.1dB @ 12GHz
Gain: 13dB
Power - Max: 136mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

패키지: -

재고5,277

10V

55GHz

1.1dB @ 12GHz

13dB

136mW

160 @ 10mA, 2V

40mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

4MN10CH-TL-E

onsemi

BIP NPN 0.1A 200V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 200V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

패키지: -

Request a Quote

200V

400MHz

-

600mW

60 @ 10mA, 10V

100mA

-

Surface Mount

SC-96

3-CPH

2SC4784YA-TR-E

Renesas Electronics Corporation

RF 0.02A, NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-