페이지 4 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 340T E6327	Infineon Technologies	TRANSISTOR RF NPN 6V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz Gain: 15dB Power - Max: 60mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V Current - Collector (Ic) (Max): 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고7,600	9V	14GHz	1.15dB @ 1.8GHz	15dB	60mW	60 @ 5mA, 3V	10mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
MRF559	Microsemi Corporation	TRANS NPN 16V 150MA MACROX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	패키지: Macro-X	재고6,336	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	Surface Mount	Macro-X	Macro-X
MRF4427R2	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,472	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427G	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,976	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF581G	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	패키지: Micro-X ceramic (84C)	재고250,548	18V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MPSH10_D75Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,592	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS5179_D26Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,800	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-41532-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고6,720	12V	-	1dB ~ 1.9dB @ 900MHz ~ 2.4GHz	9dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
NE685M03-A	CEL	TRANSISTOR NPN 2GHZ M03 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: M03	패키지: SOT-623F	재고5,840	5V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	125mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SOT-623F	M03
FMMTH10TA	Diodes Incorporated	TRANS RF NPN 25V 25MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고252,000	25V	650MHz	3dB ~ 5dB @ 500MHz	-	330mW	60 @ 4mA, 10V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BFG135,115	NXP	TRANS NPN 150MA 15V 7GHZ SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고5,632	15V	7GHz	-	-	1W	80 @ 100mA, 10V	150mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR540,235	NXP	TRANS NPN 15V 120MA 9GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,072	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG93A/X,215	NXP	TRANS NPN 12V 35MA 6GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고3,312	12V	6GHz	1.7dB ~ 2.3dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MDS1100	Microsemi Corporation	TRANS RF BIPO 8750W 100A 55TU1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 8.9dB Power - Max: 8750W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 100A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 55TU-1 Supplier Device Package: 55TU-1	패키지: 55TU-1	재고2,784	65V	1.03GHz	-	8.9dB	8750W	20 @ 5A, 5V	100A	200°C (TJ)	Surface Mount	55TU-1	55TU-1
TCS1200	Microsemi Corporation	TRANSISTOR BIPO 55TU-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 10.2dBd Power - Max: 2095W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 60A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55TU-1 Supplier Device Package: 55TU-1	패키지: 55TU-1	재고5,328	65V	1.03GHz	-	10.2dBd	2095W	20 @ 1A, 5V	60A	200°C (TJ)	Chassis Mount	55TU-1	55TU-1
PH3134-30S	M/A-Com Technology Solutions	TRANSISTOR 30W 3.10-3.40GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 3.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,664	65V	-	-	7.5dB	30W	-	3.6A	200°C (TJ)	Chassis Mount	-	-
SD1127	Microsemi Corporation	TRANSISTOR BIPO TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 640mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고3,968	18V	175MHz	-	12dB	8W	10 @ 50mA, 5V	640mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
LM3046M	Texas Instruments	IC TRANSISTOR ARRAY 14-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.25dB @ 1kHz Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고207,036	15V	-	3.25dB @ 1kHz	-	750mW	40 @ 1mA, 3V	50mA	-40°C ~ 85°C (TA)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
2SC5087R(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	패키지: SC-61AA	재고28,182	12V	8GHz	1.1dB ~ 2dB @ 1GHz	-	150mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-61AA	SMQ
2SC4808J0L	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SSMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz Gain: 11dB ~ 14dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고25,044	10V	6GHz	1.3dB ~ 2dB @ 800MHz	11dB ~ 14dB	125mW	50 @ 20mA, 8V	80mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
BF776H6327XTSA1	Infineon Technologies	TRANS RF NPN 1.8GHZ 4.0V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고97,206	4.7V	46GHz	0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz	24dB	200mW	180 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP460H6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 70MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고21,822	5.8V	22GHz	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz	12.5dB ~ 26.5dB	230mW	90 @ 20mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP640ESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 46GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.6dB ~ 2dB @ 150MHz ~ 10GHz Gain: 7dB ~ 30dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고21,822	4.7V	46GHz	0.6dB ~ 2dB @ 150MHz ~ 10GHz	7dB ~ 30dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
CM5943	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 2.4GHz Noise Figure (dB Typ @ f): 8dB @ 200MHz Gain: 11.4dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	2.4GHz	8dB @ 200MHz	11.4dB	1W	25 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SC5007-A	CEL	RF TRANS NPN 10V 7GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	패키지: -	Request a Quote	10V	7GHz	1.4dB @ 1GHz	12dB	125mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-523	-
NTE78	NTE Electronics, Inc	RF TRANS NPN 75V 16DIP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V Current - Collector (Ic) (Max): 4A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	패키지: -	Request a Quote	75V	-	-	-	1.5W	35 @ 100mA, 10V	4A	150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-DIP
15GN03F-TL-E	onsemi	BIP NPN 70MA 10V FT=1.5G Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMPTH10-TR	Central Semiconductor Corp	RF TRANS NPNUHF/VHF SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

BFR 340T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 15dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고7,600

9V

14GHz

1.15dB @ 1.8GHz

15dB

60mW

60 @ 5mA, 3V

10mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

MRF559

Microsemi Corporation

TRANS NPN 16V 150MA MACROX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Macro-X
Supplier Device Package: Macro-X

패키지: Macro-X

재고6,336

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

Surface Mount

Macro-X

MRF4427R2

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,472

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427G

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,976

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF581G

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

패키지: Micro-X ceramic (84C)

재고250,548

18V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

MPSH10_D75Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,592

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS5179_D26Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,800

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-41532-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고6,720

12V

-

1dB ~ 1.9dB @ 900MHz ~ 2.4GHz

9dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

NE685M03-A

CEL

TRANSISTOR NPN 2GHZ M03

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: M03

패키지: SOT-623F

재고5,840

5V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

125mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SOT-623F

M03

FMMTH10TA

Diodes Incorporated

TRANS RF NPN 25V 25MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고252,000

25V

650MHz

3dB ~ 5dB @ 500MHz

-

330mW

60 @ 4mA, 10V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BFG135,115

NXP

TRANS NPN 150MA 15V 7GHZ SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고5,632

15V

7GHz

-

1W

80 @ 100mA, 10V

150mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR540,235

NXP

TRANS NPN 15V 120MA 9GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,072

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG93A/X,215

NXP

TRANS NPN 12V 35MA 6GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고3,312

12V

6GHz

1.7dB ~ 2.3dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MDS1100

Microsemi Corporation

TRANS RF BIPO 8750W 100A 55TU1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 8.9dB
Power - Max: 8750W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 100A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 55TU-1
Supplier Device Package: 55TU-1

패키지: 55TU-1

재고2,784

65V

1.03GHz

-

8.9dB

8750W

20 @ 5A, 5V

100A

200°C (TJ)

Surface Mount

55TU-1

TCS1200

Microsemi Corporation

TRANSISTOR BIPO 55TU-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 10.2dBd
Power - Max: 2095W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 60A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55TU-1
Supplier Device Package: 55TU-1

패키지: 55TU-1

재고5,328

65V

1.03GHz

-

10.2dBd

2095W

20 @ 1A, 5V

60A

200°C (TJ)

Chassis Mount

55TU-1

PH3134-30S

M/A-Com Technology Solutions

TRANSISTOR 30W 3.10-3.40GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 3.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,664

65V

-

7.5dB

30W

-

3.6A

200°C (TJ)

Chassis Mount

-

SD1127

Microsemi Corporation

TRANSISTOR BIPO TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 640mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고3,968

18V

175MHz

-

12dB

8W

10 @ 50mA, 5V

640mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

LM3046M

Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고207,036

15V

-

3.25dB @ 1kHz

-

750mW

40 @ 1mA, 3V

50mA

-40°C ~ 85°C (TA)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

2SC5087R(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

패키지: SC-61AA

재고28,182

12V

8GHz

1.1dB ~ 2dB @ 1GHz

-

150mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-61AA

SMQ

2SC4808J0L

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SSMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
Gain: 11dB ~ 14dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고25,044

10V

6GHz

1.3dB ~ 2dB @ 800MHz

11dB ~ 14dB

125mW

50 @ 20mA, 8V

80mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

BF776H6327XTSA1

Infineon Technologies

TRANS RF NPN 1.8GHZ 4.0V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고97,206

4.7V

46GHz

0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

24dB

200mW

180 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP460H6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 70MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고21,822

5.8V

22GHz

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

12.5dB ~ 26.5dB

230mW

90 @ 20mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP640ESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 46GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 2dB @ 150MHz ~ 10GHz
Gain: 7dB ~ 30dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고21,822

4.7V

46GHz

0.6dB ~ 2dB @ 150MHz ~ 10GHz

7dB ~ 30dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

CM5943

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 2.4GHz
Noise Figure (dB Typ @ f): 8dB @ 200MHz
Gain: 11.4dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

2.4GHz

8dB @ 200MHz

11.4dB

1W

25 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SC5007-A

CEL

RF TRANS NPN 10V 7GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

패키지: -

Request a Quote

10V

7GHz

1.4dB @ 1GHz

12dB

125mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-523

-

NTE78

NTE Electronics, Inc

RF TRANS NPN 75V 16DIP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

패키지: -

Request a Quote

75V

-

1.5W

35 @ 100mA, 10V

4A

150°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-DIP

15GN03F-TL-E

onsemi

BIP NPN 70MA 10V FT=1.5G

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CMPTH10-TR

Central Semiconductor Corp

RF TRANS NPNUHF/VHF SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23