페이지 15 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR92WH6327XTSA1	Infineon Technologies	TRANS RF NPN 15V 45MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 11.5dB ~ 17dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고3,680	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	11.5dB ~ 17dB	280mW	70 @ 15mA, 8V	45mA	-	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BFP460E6433HTMA1	Infineon Technologies	TRANS RF NPN 4.5V 50MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고7,056	5.8V	22GHz	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz	12.5dB ~ 26.5dB	230mW	90 @ 20mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP620E7764BTSA1	Infineon Technologies	TRANSISTOR RF NPN 2.3V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21.5dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고3,792	2.8V	65GHz	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz	21.5dB	185mW	110 @ 50mA, 1.5V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP 540F E6327	Infineon Technologies	TRANSISTOR RF NPN 4.5V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고4,464	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	20dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFS 360L6 E6327	Infineon Technologies	TRANSISTOR NPN 6V 35MA TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	패키지: 6-XFDFN	재고6,640	9V	14GHz	1dB ~ 1.5dB @ 1.8GHz ~ 3GHz	10dB ~ 14.5dB	210mW	60 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	6-XFDFN	PG-TSLP-6
BFP520E6327BTSA1	Infineon Technologies	TRANS NPN RF 2.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 24dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고7,232	3.5V	45GHz	0.95dB @ 1.8GHz	24dB	100mW	70 @ 20mA, 2V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP405E6327BTSA1	Infineon Technologies	TRANS NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고4,048	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MRF553GT	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	패키지: Power Macro	재고5,952	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
2SA1977-T1B-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고4,048	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BLS3135-20,114	NXP	TRANSISTOR RF POWER SOT422A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-422A Supplier Device Package: CDFM2	패키지: SOT-422A	재고4,912	75V	3.5GHz	-	8dB	80W	40 @ 1.5A, 5V	2A	200°C (TJ)	Surface Mount	SOT-422A	CDFM2
NE68530-A	CEL	TRANSISTOR NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: 7dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고7,712	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	7dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
KSC2756RMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 30MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 850MHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 15dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고1,476,000	20V	850MHz	6.5dB @ 200MHz	15dB ~ 23dB	150mW	60 @ 5mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BFP405H6740XTSA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고7,600	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MS2209	Microsemi Corporation	TRANS RF BIPO 220W 7A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 225MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	패키지: M218	재고5,776	65V	225MHz	-	8.4dB	220W	20 @ 2A, 5V	7A	200°C (TJ)	Chassis Mount	M218	M218
2N2857	Fairchild/Micross Components	DIE RF TRANS NPN 15V Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고20,976	-	-	-	-	-	-	-	-	-	-	-
BFS17NQTA	Diodes Incorporated	TRANSISTOR RF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 11V Frequency - Transition: 3.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 310mW DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고5,792	11V	3.2GHz	-	-	310mW	56 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
AT-30533-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고6,944	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	11dB ~ 13dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC5227A-4-TB-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: TO-236-3, SC-59, SOT-23-3	재고4,592	10V	7GHz	1dB @ 1GHz	12dB	200mW	90 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
BFU910FX	NXP	TRANS NPN WIDEBAND DFP4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9.5V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 15mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고3,344	9.5V	-	-	13.5dB	300mW	-	15mA	-40°C ~ 150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
BFU590GX	NXP	TRANS RF NPN 12V 200MA SOT223-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고68,220	12V	8.5GHz	-	8dB	2W	60 @ 80mA, 8V	200mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SC5890FS-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.8GHz Noise Figure (dB Typ @ f): 1dB @ 900MHz Gain: 12dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Current - Collector (Ic) (Max): 75mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	12V	7.8GHz	1dB @ 900MHz	12dB	700mW	100 @ 20mA, 5V	75mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
MPSH81-TRE	Central Semiconductor Corp	RF TRANS PNP 20V 600MHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: -	Request a Quote	20V	600MHz	-	-	-	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SC6024-TL-E	onsemi	BIP NPN 35MA 3.5V FT=14G Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 9dB ~ 10.5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: 3-SSFP	패키지: -	Request a Quote	3.5V	14GHz	1.2dB @ 2GHz	9dB ~ 10.5dB	120mW	80 @ 15mA, 3V	35mA	-	Surface Mount	3-SMD, Flat Lead	3-SSFP
MS2244	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3866-PBFREE	Central Semiconductor Corp	RF TRANS NPN 30V 500MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	500MHz	-	-	5W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SC4094-A	CEL	RF TRANS NPN 10V 9GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB ~ 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	패키지: -	Request a Quote	10V	9GHz	1.2dB @ 1GHz	17dB ~ 23dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
MPSH10-BP	Micro Commercial Co	TRANSISTOR TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SD438F-MP-AE	onsemi	2SD438 - BIPOLAR NPN TRANSISTOR, Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR92WH6327XTSA1

Infineon Technologies

TRANS RF NPN 15V 45MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고3,680

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

11.5dB ~ 17dB

280mW

70 @ 15mA, 8V

45mA

-

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BFP460E6433HTMA1

Infineon Technologies

TRANS RF NPN 4.5V 50MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고7,056

5.8V

22GHz

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

12.5dB ~ 26.5dB

230mW

90 @ 20mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP620E7764BTSA1

Infineon Technologies

TRANSISTOR RF NPN 2.3V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 21.5dB
Power - Max: 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고3,792

2.8V

65GHz

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

21.5dB

185mW

110 @ 50mA, 1.5V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP 540F E6327

Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고4,464

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

20dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFS 360L6 E6327

Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

패키지: 6-XFDFN

재고6,640

9V

14GHz

1dB ~ 1.5dB @ 1.8GHz ~ 3GHz

10dB ~ 14.5dB

210mW

60 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

6-XFDFN

PG-TSLP-6

BFP520E6327BTSA1

Infineon Technologies

TRANS NPN RF 2.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 24dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고7,232

3.5V

45GHz

0.95dB @ 1.8GHz

24dB

100mW

70 @ 20mA, 2V

40mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP405E6327BTSA1

Infineon Technologies

TRANS NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고4,048

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MRF553GT

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

패키지: Power Macro

재고5,952

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

2SA1977-T1B-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고4,048

12V

8.5GHz

1.5dB @ 1GHz

12dB

200mW

20 @ 20mA, 8V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BLS3135-20,114

NXP

TRANSISTOR RF POWER SOT422A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-422A
Supplier Device Package: CDFM2

패키지: SOT-422A

재고4,912

75V

3.5GHz

-

8dB

80W

40 @ 1.5A, 5V

2A

200°C (TJ)

Surface Mount

SOT-422A

CDFM2

NE68530-A

CEL

TRANSISTOR NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: 7dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고7,712

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

7dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

KSC2756RMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 850MHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 15dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고1,476,000

20V

850MHz

6.5dB @ 200MHz

15dB ~ 23dB

150mW

60 @ 5mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BFP405H6740XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

패키지: SC-82A, SOT-343

재고7,600

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MS2209

Microsemi Corporation

TRANS RF BIPO 220W 7A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 225MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

패키지: M218

재고5,776

65V

225MHz

-

8.4dB

220W

20 @ 2A, 5V

7A

200°C (TJ)

Chassis Mount

M218

2N2857

Fairchild/Micross Components

DIE RF TRANS NPN 15V

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고20,976

-

BFS17NQTA

Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 11V
Frequency - Transition: 3.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 310mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고5,792

11V

3.2GHz

-

310mW

56 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

AT-30533-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고6,944

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

11dB ~ 13dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC5227A-4-TB-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: TO-236-3, SC-59, SOT-23-3

재고4,592

10V

7GHz

1dB @ 1GHz

12dB

200mW

90 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

BFU910FX

NXP

TRANS NPN WIDEBAND DFP4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 15mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고3,344

9.5V

-

13.5dB

300mW

-

15mA

-40°C ~ 150°C (TJ)

Surface Mount

SOT-343F

BFU590GX

NXP

TRANS RF NPN 12V 200MA SOT223-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고68,220

12V

8.5GHz

-

8dB

2W

60 @ 80mA, 8V

200mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SC5890FS-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.8GHz
Noise Figure (dB Typ @ f): 1dB @ 900MHz
Gain: 12dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
Current - Collector (Ic) (Max): 75mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

Request a Quote

12V

7.8GHz

1dB @ 900MHz

12dB

700mW

100 @ 20mA, 5V

75mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

MPSH81-TRE

Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: -

Request a Quote

20V

600MHz

-

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SC6024-TL-E

onsemi

BIP NPN 35MA 3.5V FT=14G

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 9dB ~ 10.5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-SSFP

패키지: -

Request a Quote

3.5V

14GHz

1.2dB @ 2GHz

9dB ~ 10.5dB

120mW

80 @ 15mA, 3V

35mA

-

Surface Mount

3-SMD, Flat Lead

3-SSFP

MS2244

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N3866-PBFREE

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

500MHz

-

5W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SC4094-A

CEL

RF TRANS NPN 10V 9GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB ~ 23dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

패키지: -

Request a Quote

10V

9GHz

1.2dB @ 1GHz

17dB ~ 23dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

MPSH10-BP

Micro Commercial Co

TRANSISTOR TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2SD438F-MP-AE

onsemi

2SD438 - BIPOLAR NPN TRANSISTOR,

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-