페이지 17 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 720FESD E6327	Infineon Technologies	TRANS RF NPN 45GHZ 4.7V TSFP4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz Gain: 10dB ~ 29dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고2,176	4.7V	45GHz	0.5dB ~ 1.3dB @ 150MHz ~ 10GHz	10dB ~ 29dB	100mW	160 @ 15mA, 3V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BF776E6327FTSA1	Infineon Technologies	TRANS RF NPN 1.8GHZ 4.0V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 46GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고3,568	4.7V	46GHz	0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz	24dB	200mW	180 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP193WE6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 13.5dB ~ 20.5dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고5,584	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	13.5dB ~ 20.5dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MRF8372R2	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고262,680	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC5088-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 500MHZ USQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	패키지: SC-82A, SOT-343	재고5,760	12V	7GHz	1dB @ 500MHz	18dB	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-82A, SOT-343	USQ
UTV010	Microsemi Corporation	TRANS RF BIPO 15W 1.25A 55FT-5 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	패키지: 55FT	재고5,376	24V	470MHz ~ 860MHz	-	11.5dB	15W	15 @ 200mA, 5V	1.25A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
HFA3096B96	Intersil	IC TRANS ARRAY NPN/PNP 16-SOIC Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고4,816	12V, 15V	8GHz, 5.5GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V / 20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
2N5770_D27Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,872	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE678M04-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 13.5dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	패키지: SOT-343F	재고7,392	6V	12GHz	1.7dB @ 2GHz	13.5dB	205mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
BFG25A/X,215	NXP	TRANS NPN 5V 5GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Gain: - Power - Max: 32mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	패키지: TO-253-4, TO-253AA	재고6,160	5V	5GHz	1.8dB ~ 2dB @ 1GHz	-	32mW	50 @ 500µA, 1V	6.5mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
1002MP	Microsemi Corporation	TRANS RF BIPO 7W 250MA 55FW1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.24dB ~ 11dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	패키지: 55FW-1	재고5,536	50V	960MHz ~ 1.215GHz	-	8.24dB ~ 11dB	7W	20 @ 100mA, 5V	250mA	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
SD1224-02	Microsemi Corporation	TRANS RF BIPO 60W 5A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 60W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고3,648	35V	175MHz	-	7.6dB	60W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	M113	M113
MAX2601ESA+T	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고3,648	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
AT-31033-TR1G	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 9dB ~ 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,527,520	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	9dB ~ 11dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFU550WF	NXP	TRANS RF NPN 12V 50MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz Gain: 12dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,120	12V	11GHz	1.3dB @ 1.8GHz	12dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
55GN01FA-TL-H	ON Semiconductor	TRANS NPN BIPO 70MA 10V SSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 4.5GHz ~ 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-81 Supplier Device Package: 3-SSFP	패키지: SC-81	재고2,992	10V	4.5GHz ~ 5.5GHz	1.9dB @ 1GHz	11dB ~ 19dB @ 1GHz ~ 400MHz	250mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-81	3-SSFP
MRF1090MB	M/A-Com Technology Solutions	TRANS NPN 90W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 90W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 6A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 332A-03 Supplier Device Package: 332A-03, Style 1	패키지: 332A-03	재고4,784	70V	-	-	10.8dB	90W	10 @ 2.5A, 5V	6A	-	Chassis Mount	332A-03	332A-03, Style 1
MRF10120	M/A-Com Technology Solutions	TRANS NPN 120W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 355C-02 Supplier Device Package: 355C-02, Style 1	패키지: 355C-02	재고6,120	55V	-	-	8.5dB	120W	20 @ 5A, 5V	15A	200°C (TJ)	Chassis Mount	355C-02	355C-02, Style 1
BFU580QX	NXP	TRANS RF NPN 12V 60MA SOT89-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz Gain: 8.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고20,412	12V	10.5GHz	1.3dB @ 1.8GHz	8.5dB	1W	60 @ 30mA, 8V	60mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2SC563200L	Panasonic Electronic Components	TRANS NPN 8VCEO 50MA S-MINI 3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고21,894	8V	1.1GHz	-	-	150mW	100 @ 2mA, 4V	50mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
MMBTH10-7-F	Diodes Incorporated	TRANS NPN VHF/UHF 25V SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고844,500	25V	650MHz	-	-	300mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BF771E6765N	Infineon Technologies	RF TRANSISTOR, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-4	패키지: -	Request a Quote	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3-4
MRF587	MACOM Technology Solutions	TRANS RF NPN 17A 200MA 244A-01 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3dB @ 0.5GHz Gain: 13dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 244A-01 Supplier Device Package: 244A-01, STYLE 1	패키지: -	Request a Quote	17V	5.5GHz	3dB @ 0.5GHz	13dB	-	50 @ 50mA, 5V	200mA	200°C (TJ)	Stud Mount	244A-01	244A-01, STYLE 1
2N3866-TIN-LEAD	Central Semiconductor Corp	RF TRANS NPN 30V 500MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	30V	500MHz	-	10dB	5W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
HSG2001VF-01TL-E	Renesas Electronics Corporation	NPN HIGH FREQPOWER AMP Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS2348	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC3776D	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MZ0912B50Y	Ampleon USA Inc.	RF POWER BIPOLAR TRANSISTOR, 1-E Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 150W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-443A Supplier Device Package: SOT443A	패키지: -	Request a Quote	20V	1.215GHz	-	8dB	150W	-	3A	200°C (TJ)	Chassis Mount	SOT-443A	SOT443A

BFP 720FESD E6327

Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
Gain: 10dB ~ 29dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고2,176

4.7V

45GHz

0.5dB ~ 1.3dB @ 150MHz ~ 10GHz

10dB ~ 29dB

100mW

160 @ 15mA, 3V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BF776E6327FTSA1

Infineon Technologies

TRANS RF NPN 1.8GHZ 4.0V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 24dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고3,568

4.7V

46GHz

0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

24dB

200mW

180 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP193WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고5,584

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

13.5dB ~ 20.5dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MRF8372R2

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고262,680

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC5088-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 500MHZ USQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ

패키지: SC-82A, SOT-343

재고5,760

12V

7GHz

1dB @ 500MHz

18dB

100mW

80 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-82A, SOT-343

USQ

UTV010

Microsemi Corporation

TRANS RF BIPO 15W 1.25A 55FT-5

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 15W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

패키지: 55FT

재고5,376

24V

470MHz ~ 860MHz

-

11.5dB

15W

15 @ 200mA, 5V

1.25A

200°C (TJ)

Chassis, Stud Mount

55FT

HFA3096B96

Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 12V, 15V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고4,816

12V, 15V

8GHz, 5.5GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V / 20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

2N5770_D27Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,872

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE678M04-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13.5dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

패키지: SOT-343F

재고7,392

6V

12GHz

1.7dB @ 2GHz

13.5dB

205mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-343F

BFG25A/X,215

NXP

TRANS NPN 5V 5GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 32mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Current - Collector (Ic) (Max): 6.5mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

패키지: TO-253-4, TO-253AA

재고6,160

5V

5GHz

1.8dB ~ 2dB @ 1GHz

-

32mW

50 @ 500µA, 1V

6.5mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

1002MP

Microsemi Corporation

TRANS RF BIPO 7W 250MA 55FW1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.24dB ~ 11dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

패키지: 55FW-1

재고5,536

50V

960MHz ~ 1.215GHz

-

8.24dB ~ 11dB

7W

20 @ 100mA, 5V

250mA

200°C (TJ)

Chassis Mount

55FW-1

SD1224-02

Microsemi Corporation

TRANS RF BIPO 60W 5A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 60W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

패키지: M113

재고3,648

35V

175MHz

-

7.6dB

60W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

M113

MAX2601ESA+T

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고3,648

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

AT-31033-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 9dB ~ 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,527,520

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

9dB ~ 11dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFU550WF

NXP

TRANS RF NPN 12V 50MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
Gain: 12dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,120

12V

11GHz

1.3dB @ 1.8GHz

12dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

55GN01FA-TL-H

ON Semiconductor

TRANS NPN BIPO 70MA 10V SSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-81
Supplier Device Package: 3-SSFP

패키지: SC-81

재고2,992

10V

4.5GHz ~ 5.5GHz

1.9dB @ 1GHz

11dB ~ 19dB @ 1GHz ~ 400MHz

250mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-81

3-SSFP

MRF1090MB

M/A-Com Technology Solutions

TRANS NPN 90W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 90W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
Current - Collector (Ic) (Max): 6A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03, Style 1

패키지: 332A-03

재고4,784

70V

-

10.8dB

90W

10 @ 2.5A, 5V

6A

-

Chassis Mount

332A-03

332A-03, Style 1

MRF10120

M/A-Com Technology Solutions

TRANS NPN 120W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 355C-02
Supplier Device Package: 355C-02, Style 1

패키지: 355C-02

재고6,120

55V

-

8.5dB

120W

20 @ 5A, 5V

15A

200°C (TJ)

Chassis Mount

355C-02

355C-02, Style 1

BFU580QX

NXP

TRANS RF NPN 12V 60MA SOT89-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
Gain: 8.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고20,412

12V

10.5GHz

1.3dB @ 1.8GHz

8.5dB

1W

60 @ 30mA, 8V

60mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2SC563200L

Panasonic Electronic Components

TRANS NPN 8VCEO 50MA S-MINI 3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고21,894

8V

1.1GHz

-

150mW

100 @ 2mA, 4V

50mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

MMBTH10-7-F

Diodes Incorporated

TRANS NPN VHF/UHF 25V SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고844,500

25V

650MHz

-

300mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BF771E6765N

Infineon Technologies

RF TRANSISTOR, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3-4

패키지: -

Request a Quote

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3-4

MRF587

MACOM Technology Solutions

TRANS RF NPN 17A 200MA 244A-01

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 0.5GHz
Gain: 13dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 244A-01
Supplier Device Package: 244A-01, STYLE 1

패키지: -

Request a Quote

17V

5.5GHz

3dB @ 0.5GHz

13dB

-

50 @ 50mA, 5V

200mA

200°C (TJ)

Stud Mount

244A-01

244A-01, STYLE 1

2N3866-TIN-LEAD

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

30V

500MHz

-

10dB

5W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

HSG2001VF-01TL-E

Renesas Electronics Corporation

NPN HIGH FREQPOWER AMP

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MS2348

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC3776D

Sanyo

NPN EPITAXIAL PLANAR SILICON

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MZ0912B50Y

Ampleon USA Inc.

RF POWER BIPOLAR TRANSISTOR, 1-E

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 150W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-443A
Supplier Device Package: SOT443A

패키지: -

Request a Quote

20V

1.215GHz

-

8dB

150W

-

3A

200°C (TJ)

Chassis Mount

SOT-443A

SOT443A